Patent US5066565A successfully refreshed from Google Patents.
US5066565A
Expired / Lapsed
US
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Selective protection of poly(tetra-fluoroethylene) from effects of chemical etching
Assignee: United States Department of Energy
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Filing: 1989-03-29
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Granted: 1991-11-19
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Expires: 2009-03-29
Abstract
Abstract A photolithographic method for treating an article formed of polymeric material comprises subjecting portions of a surface of the polymeric article to ionizing radiation; and then subjecting the surface to chemical etching. The ionizing radiation treatment according to the present invention minimizes the effect of the subseuent chemical etching treatment. Thus, selective protection from the effects of chemical etching can be easily provided. The present invention has particular applicability to articles formed of fluorocarbons, such as PTFE. The ionizing radiation employed in the method may comprise Mg(kα) X-rays or lower-energy electrons.
Inventors
- 👤 Robert J. Martinez
- 👤 Robert R. Rye
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:30
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/2051; G03F7/2059; H; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0313; H05K1/032; H05K1/034; H05K3/00; H05K3/0011; H05K3/0017; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
32 words
A photolithographic method for treating an article formed of poly(tetrafluoroethylene), comprising: (1) subjecting portions of a surface of said article to ionizing radiation; and then (2) subjecting said surface to chemical etching.
Claim 2
Dependent Claim
32 words
A photolithographic method for treating an article formed of poly(tetrafluoroethylene), comprising: (1) subjecting portions of a surface of said article to ionizing radiation; and then (2) subjecting said surface to chemical etching.
Claim 3
Dependent Claim
14 words
A photolithographic method according to claim 1, wherein said ionizing radiation comprises Mg(kα) X-rays.
Claim 4
Dependent Claim
14 words
A photolithographic method according to claim 1, wherein said ionizing radiation comprises low-energy electrons.
Claim 5
Dependent Claim
20 words
A photolithographic method according to claim 3, wherein said low-energy electrons are of energies from 0.5 keV to 3.0 keV.
Claim 6
Dependent Claim
20 words
A photolithographic method according to claim 1, wherein said chemical etching comprises treating said surface with sodium in liquid ammonia.
Claim 7
Dependent Claim
25 words
A photolithographic method according to claim 1, wherein said chemical etching comprises treating said surface with sodium as a 1:1 complex of sodium and naphthalene.
Claim 8
Dependent Claim
86 words
A photolithographic method for enhancing the bondability of selected portions of an article formed of poly(tetrafluoroethylene), comprising: (1) subjecting portions of a surface of said article to ionizing radiation; and then (2) subjecting said surface to chemical etching, whereby due to said ionizing radiation, said portions of said surface are less affected by said chemical etching, said chemical etching comprising treating said surface with a material selected from the group consisting of sodium in liquid ammonia and sodium as a 1:1 complex of sodium and naphthalene.
Claim 9
Dependent Claim
86 words
A photolithographic method for enhancing the bondability of selected portions of an article formed of poly(tetrafluoroethylene), comprising: (1) subjecting portions of a surface of said article to ionizing radiation; and then (2) subjecting said surface to chemical etching, whereby due to said ionizing radiation, said portions of said surface are less affected by said chemical etching, said chemical etching comprising treating said surface with a material selected from the group consisting of sodium in liquid ammonia and sodium as a 1:1 complex of sodium and naphthalene.
Claim 10
Dependent Claim
14 words
A photolithographic method according to claim 7, wherein said ionizing radiation comprises Mg(kα) X-rays.
Claim 11
Dependent Claim
20 words
A photolithographic method according to claim 7, wherein said ionizing radiation comprises electrons of energies from 0.5 to 3.0 keV.
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