Abstract A laminated structure includes a wafer member with a membrane attached thereto, the membrane being formed of substantially hydrogen-free boron nitride having a nominal composition B 3 N. The structure may be a component in a mechanical device for effecting a mechanical function, or the membrane may form a masking layer on the wafer. The structure includes a body formed of at least two wafer members laminated together with a cavity formed therebetween, with the boron nitride membrane extending into the cavity so as to provide the structural component such as a support for a heating element or a membrane in a gas valve. In another aspect borom is selectively diffused from the boron nitride into a <100> surface of a silicon wafer. The surface is then exposed to EDP etchant to which the diffusion layer is resistant, thereby forming a channel the wafer member with smooth walls for fluid flow.
A process for forming a step with a smooth wall in a wafer member, comprising diffusing boron into a portion of a selected area of a <100> surface of a silicon wafer member to form a boron diffusion layer, and exposing the selected area to a selective etchant to which the boron diffusion layer is resistant, whereby the boron diffusion layer forms a step adjacent etched silicon in the wafer member with a smooth wall substantially perpendicular to the <100> surface.
Claim 2
Dependent Claim
81 words
A process for forming a step with a smooth wall in a wafer member, comprising diffusing boron into a portion of a selected area of a <100> surface of a silicon wafer member to form a boron diffusion layer, and exposing the selected area to a selective etchant to which the boron diffusion layer is resistant, whereby the boron diffusion layer forms a step adjacent etched silicon in the wafer member with a smooth wall substantially perpendicular to the <100> surface.
Claim 3
Dependent Claim
27 words
The process according to claim 1 wherein the portion of selected area has rounded contours so that the smooth wall includes smooth roundings corresponding to the contours.
Claim 4
Dependent Claim
13 words
The process according to claim 1 wherein the selective etchant is ethylene diamine-pyrocatechol.
Claim 5
Dependent Claim
27 words
The process according to claim 1 wherein the boron is present in the diffusion layer in an amount between 10 19 and 10 23 atoms/cm 3 .
Claim 6
Dependent Claim
28 words
A miniaturized device comprising a silicon wafer member having a step therein with a smooth wall, formed by the process according to claim 1, or 2 or 3.
Claim 7
Dependent Claim
22 words
The device according to claim 5 wherein the smooth wall defines a side of a fluid flow channel in the wafer member.