Photoelectric converting device with accumulating gate region

Claim 2

A photo=sensitive semiconductor device comprising: (a) a semiconductor substrate of a low impurity concentration; (b) a channel region formed on said substrate and having a low impurity concentration; (c) a source region formed on said channel region and having a high impurity concentration of a conductive type opposite to that of said substrate; (d) a drain region formed on said channel region nd having a high impurity concentration of a conducive type opposite to that of said substrate, said source region and said drain region being spaced from one another in a predetermined direction along said substrate; and (e) an accumulating gate region formed on said channel region and being of the same conductive type as said substrate, said accumulating gate region having a first part which is interposed between said source region and aid drain region in planes substantially parallel to said substrate and which is at least coextensive with one of said source region and said drain region in a direction substantially perpendicular to said predetermined direction, said accumulating gate region further having second and third parts respectively connected to opposite ends of said first part and extending, in said planes, along opposite sides of said one of said source region and said drain region; wherein said accumulating gate region is adapted to accumulate a charge corresponding to an intensity of radiation incident on said device, a current flows from one to the other of said source region and said drain region through a part of said channel region sandwiched between said first part of said accumulating gate region and said substrate, the potential of said accumulating gate region is variable according to said accumulated charge, and said current is variable according to the potential of said accumulating gate region.

Claim 3

A photo-sensitive semiconductor device according to claim 1, wherein said accumulating gate region is formed so as to completely surround said one of said source region and said drain region in said planes.

Claim 4

A photo-sensitive semiconductor device according to claim 2, wherein the other of said source region and said drain region is formed so as to completely surround said accumulating gate region in said planes.

Claim 5

A photo-sensitive semiconductor device according to claim 1, wherein the extent of said first part of said accumulating gate region in said predetermined direction is less than that of said second part of said accumulating gate region and that of said third part of said accumulating gate region in a direction substantially perpendicular to said predetermined direction.

Claim 6

A photo-sensitive semiconductor device according to claim 1, wherein the extent of said first part of said accumulating gate region in said predetermined direction is less than that of said second part of said accumulating gate region and that of said third part of said accumulating gate region in said predetermined direction.

Claim 7

A photo-sensitive semiconductor device according to claim 1, wherein said second and third parts of said accumulating gate region respectively extend along opposite sides of each of said source region and said drain region in said planes.

Claim 8

A photo-sensitive semiconductor device according to claim 1, including an insulating layer laminated on part of said accumulating gate region, and an electrode formed on said insulating layer, thus providing a gate capacitor.

Claim 9

A photo-sensitive semiconductor device according to claim 1, including an embedded region having a high impurity concentration of the same conductive type as said substrate, said embedded region being sandwiched between said channel region and said substrate beneath said first part of said accumulating gate region.

Claim 10

A photo-sensitive semiconductor device comprising: (a) a semiconductor substrate of low impurity concentration; and (b) a plurality of pixels formed on said substrate, each pixel including a channel region having a low impurity concentration, a first high concentration region having a high impurity concentration of a conductive type opposite to that of said substrate, a second high concentration region having a high impurity concentration of a conductive type opposite to that of said accumulating gate region surrounding said first high concentration region in planes substantially parallel to said substrate and being surrounded by said second high concentration region in said panes; wherein a current flows in each pixel from one to the other of said first and second high concentration regions through a part of said channel region sandwiched between said accumulating gate region and said substrate, said accumulating gate region is adapted to accumulate a charge corresponding to an intensity of radiation incident on said device, and said current is variable according to said accumulated charge.

Claim 11

A photo-sensitive semiconductor device comprising: (a) a semiconductor substrate of low impurity concentration; and (b) a plurality of pixels formed on said substrate, each pixel including a channel region having a low impurity concentration, a first high concentration region having a high impurity concentration of a conductive type opposite to that of said substrate, a second high concentration region having a high impurity concentration of a conductive type opposite to that of said accumulating gate region surrounding said first high concentration region in planes substantially parallel to said substrate and being surrounded by said second high concentration region in said panes; wherein a current flows in each pixel from one to the other of said first and second high concentration regions through a part of said channel region sandwiched between said accumulating gate region and said substrate, said accumulating gate region is adapted to accumulate a charge corresponding to an intensity of radiation incident on said device, and said current is variable according to said accumulated charge.

Claim 12

A photo-sensitive semiconductor device comprising: (a) a semiconductor substrate of a low impurity concentration; (b) a channel region formed on said substrate and having a low impurity concentration; (c) a source region formed on said channel region and having a high impurity concentration of a conductive type opposite to that of said substrate; (d) a drain region formed on said channel region and having a high impurity concentration of a conductive type opposite to that of said substrate, and source region and said drain region being spaced from one another in a predetermined direction along said substrate; (e) an accumulating gate region formed on said channel region and being of the same conductive type as said substrate, said accumulating gate region having a first part which is interposed between said source region and said drain region in planes substantially parallel to said substrate and which is at least coextensive with one of said source region and said drain region in a direction substantially perpendicular to said predetermined direction, said accumulating gate region further having second and third parts respectively connected to opposite ends of said first part and extending, in said planes, along opposite sides of said one of said source region and said drain region; (f) an insulating layer laminated on said first part of said accumulating gate region; and (g) an electrode member formed on said insulating layer above first part of said accumulating gate region; wherein a current flows from one to the other of said source region and said drain region through a part of said channel region sandwiched between said first part of said accumulating gate region and said substrate, said accumulating gate region and said part of said channel region adjacent to said first part of said accumulating gate region are adapted to accumulate a charge corresponding to an intensity of radiation incident on said device, and said current is variable according to said accumulated charge and a voltage applied to said electrode member.

Claim 13

A photo-sensitive semiconductor device comprising: (a) a semiconductor substrate of a low impurity concentration; (b) a channel region formed on said substrate and having a low impurity concentration; (c) a source region formed on said channel region and having a high impurity concentration of a conductive type opposite to that of said substrate; (d) a drain region formed on said channel region and having a high impurity concentration of a conductive type opposite to that of said substrate, and source region and said drain region being spaced from one another in a predetermined direction along said substrate; (e) an accumulating gate region formed on said channel region and being of the same conductive type as said substrate, said accumulating gate region having a first part which is interposed between said source region and said drain region in planes substantially parallel to said substrate and which is at least coextensive with one of said source region and said drain region in a direction substantially perpendicular to said predetermined direction, said accumulating gate region further having second and third parts respectively connected to opposite ends of said first part and extending, in said planes, along opposite sides of said one of said source region and said drain region; (f) an insulating layer laminated on said first part of said accumulating gate region; and (g) an electrode member formed on said insulating layer above first part of said accumulating gate region; wherein a current flows from one to the other of said source region and said drain region through a part of said channel region sandwiched between said first part of said accumulating gate region and said substrate, said accumulating gate region and said part of said channel region adjacent to said first part of said accumulating gate region are adapted to accumulate a charge corresponding to an intensity of radiation incident on said device, and said current is variable according to said accumulated charge and a voltage applied to said electrode member.

Claim 14

A photo-sensitive semiconductor device according to claim 10, wherein said insulating layer is also laminated on a part of said channel region adjacent to said first part of said accumulating gate region.