US5064499A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Inductively sensed magnetic memory manufacturing method
Assignee: Micron Technology Inc
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Filing: 1990-04-09
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Granted: 1991-11-12
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Expires: 2010-04-09
Abstract
Abstract A magnetic thin-film memory in a monolithic integrated circuit using inductive sensing of the memory states occurring therein.
Inventors
- 👤 Richard B. Fryer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:20
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/02; G11C11/14; G11C11/155
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
231 words
A method for forming a thin-film magnetic memory on a substrate in a monolithic integrated circuit, said method comprising: forming an elongated first outward loop first conductor supported by said substrate; forming a first plurality of anisotropic magnetic thin-film first memory layer portions each at a corresponding selected location along said first outward loop first conductor at a side thereof opposite that of said substrate; forming an elongated first orthogonal loop conductor crossing said first outward loop first conductor at least at two of said first memory layer portions in said first plurality thereof on a side thereof opposite that of said first outward loop first conductor; forming a first plurality of anisotropic magnetic thin-film second memory layer portions each across said first orthogonal loop conductor from a corresponding one of said first plurality of first memory layer portions but with each extending around and past said first orthogonal loop conductor to be in direct contact with its corresponding one of said first plurality of said first memory layer portions; and forming an elongated first outward loop second conductor substantially parallel to said first outward loop first conductor and across therefrom with said first plurality of first memory layer portions, said first orthogonal loop conductor, and said first plurality of second memory layer portions therebetween, said first outward loop second conductor being electrically connected to said first outward loop first conductor.
Claim 2
Independent Claim
231 words
A method for forming a thin-film magnetic memory on a substrate in a monolithic integrated circuit, said method comprising: forming an elongated first outward loop first conductor supported by said substrate; forming a first plurality of anisotropic magnetic thin-film first memory layer portions each at a corresponding selected location along said first outward loop first conductor at a side thereof opposite that of said substrate; forming an elongated first orthogonal loop conductor crossing said first outward loop first conductor at least at two of said first memory layer portions in said first plurality thereof on a side thereof opposite that of said first outward loop first conductor; forming a first plurality of anisotropic magnetic thin-film second memory layer portions each across said first orthogonal loop conductor from a corresponding one of said first plurality of first memory layer portions but with each extending around and past said first orthogonal loop conductor to be in direct contact with its corresponding one of said first plurality of said first memory layer portions; and forming an elongated first outward loop second conductor substantially parallel to said first outward loop first conductor and across therefrom with said first plurality of first memory layer portions, said first orthogonal loop conductor, and said first plurality of second memory layer portions therebetween, said first outward loop second conductor being electrically connected to said first outward loop first conductor.
Claim 3
Dependent Claim
63 words
The method of claim 1 wherein said forming of said first outward loop first conductor is preceded by forming a first plurality of magnetic thin-film first keeper layer portions supported by said substrate, said first plurality of first memory layer portions each being across said first outward loop first conductor from a corresponding one of said first plurality of first keeper layer portions.
Claim 4
Dependent Claim
50 words
The method of claim 1 wherein said forming of said first outward loop second conductor is followed by forming a first plurality of magnetic thin-film second keeper layer portions each across said first outward loop second conductor from a corresponding one of said first plurality of second memory layer portions.
Claim 5
Dependent Claim
32 words
The method of claim 1 wherein said forming of said first plurality of first memory layer portions is preceded by providing a first separation layer on said first outward loop first conductor.
Claim 6
Dependent Claim
31 words
The method of claim 1 wherein said forming of said first orthogonal loop conductor is preceded by forming a first separation layer on said first plurality of first memory layer portions.
Claim 7
Dependent Claim
31 words
The method of claim 1 wherein said forming of said first plurality of second memory layer portions is preceded by providing a first separation layer on said first orthogonal loop conductor.
Claim 8
Dependent Claim
32 words
The method of claim 1 wherein said forming of said first outward loop second conductor is preceded by forming a first separation layer on said first plurality of second memory layer portions.
Claim 9
Dependent Claim
188 words
The method of claim 1 wherein said method further comprises: forming a second plurality of anisotropic magnetic thin-film first memory layer portions each at a corresponding selected location along said first outward loop first conductor at a side thereof opposite that of said substrate; forming an elongated second orthogonal loop conductor crossing said first outward loop first conductor at least at two of said first memory layer portions in said second plurality thereof on a side thereof opposite that of said first outward loop first conductor; and forming a second plurality of anisotropic magnetic thin-film second memory layer portions each across said first orthogonal loop conductor from a corresponding one of said second plurality of first memory layer portions but with each extending around and past said second orthogonal loop conductor to be in direct contact with its corresponding one of said second plurality of said first memory layer portions, and with said second plurality of first memory layer portions, said second orthogonal loop conductor, and said second plurality of second memory layer portions being between said first outward loop first conductor and first outward loop second conductor.
Claim 10
Dependent Claim
221 words
The method of claim 1 wherein said method further comprises: forming an elongated second outward loop first conductor supported by said substrate; forming a second plurality of anisotropic magnetic thin-film first memory layer portions each at a corresponding selected location along said second outward loop first conductor at a side thereof opposite that of said substrate with said first orthogonal loop conductor crossing said second outward loop first conductor at least at two of said first memory layer portions in said second plurality thereof on a side thereof opposite that of said second outward loop first conductor; forming a second plurality of anisotropic magnetic thin-film second memory layer portions each across said first orthogonal loop conductor from a corresponding one of said second plurality of first memory layer portions but with each extending around and past said first orthogonal loop conductor to be in direct contact with its corresponding one of said second plurality of said first memory layer portions; and forming an elongated second outward loop second conductor substantially parallel to said second outward loop first conductor and across therefrom with said second plurality of first memory layer portions, said first orthogonal loop conductor, and said second plurality of second memory layer portions therebetween, said second outward loop second conductor being electrically connected to said second outward loop first conductor.
Claim 11
Dependent Claim
32 words
The method of claim 2 wherein said forming of said first outward loop first conductor is preceded by forming a first separation layer on said first plurality of first keeper layer portions.
Claim 12
Dependent Claim
32 words
The method of claim 3 wherein said forming of said first plurality of second keeper layer portions is preceded by providing a first separation layer on said first outward loop second conductor.
Claim 13
Dependent Claim
43 words
The method of claim 8 wherein said first and second pluralities of first memory layer portions are formed concurrently, said first and second orthogonal loop conductors are formed concurrently, and said first and second pluralities of second memory layer portions are formed concurrently.
Claim 14
Dependent Claim
55 words
The method of claim 9 wherein said first and second outward loop first conductors are formed concurrently, said first and second pluralities of first memory layer portions are formed concurrently, said first and second pluralities of second memory layer portions are formed concurrently, and said first and second outward loop second conductors are formed concurrently.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-11 | 1995-05-13 | 1995-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-11 | 1999-05-13 | 1999-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-11 | 2003-05-13 | 2003-11-12 | $7700.00 | Window Closed / Lapsed |