Memory device using ferromagnetic substance lines

Claim 2

A word-selection memory device using a ferromagnetic substance, comprising: a plurality of nonmagnetic lines of rectangular section arranged in parallel to one another; and a plurality of memory lines of rectangular section orthogonally arranged with respect to said nonmagnetic lines and composed only from a conducting, ferromagnetic substance having an axial easy magnetization axis, the thickness of each of said memory lines being within a range of 5000A to 2 microns.

Claim 3

A word-selection memory device according to claim 1, further comprising magnetic flux keepers of magnetic films deposited on respective ones of said nonmagnetic lines except the portions thereof opposed to said magnetic lines.

Claim 4

A word-selection memory device according to claim 1, in which the width of each of said memory lines is within a range of 20 to 200 microns.

Claim 5

In a memory device of the type which stores binary information and performs non-destructive read-out in response to pulse signals applied thereto: means defining a plurality of nonmagnetic lines disposed parallel to one another, each nonmagnetic line having a generally rectangular cross-section and being composed of nonmagnetic, electrically conductive material; and means defining a plurality of magnetic lines disposed parallel to one another and orthogonal to said nonmagnetic lines, each magnetic line having a generally rectangular cross-sEction with a thickness within the range of 5000A to 2 microns and being composed solely of ferromagnetic, electrically conductive material and having an axial easy magnetization axis; said magnetic lines being positioned with respect to said nonmagnetic lines such that each intersection of two lines has one of two stable magnetizations which are located at 0* and 180* relative to the axis of said magnetic lines.

Claim 6

In a memory device of the type which stores binary information and performs non-destructive read-out in response to pulse signals applied thereto: means defining a plurality of nonmagnetic lines disposed parallel to one another, each nonmagnetic line having a generally rectangular cross-section and being composed of nonmagnetic, electrically conductive material; and means defining a plurality of magnetic lines disposed parallel to one another and orthogonal to said nonmagnetic lines, each magnetic line having a generally rectangular cross-sEction with a thickness within the range of 5000A to 2 microns and being composed solely of ferromagnetic, electrically conductive material and having an axial easy magnetization axis; said magnetic lines being positioned with respect to said nonmagnetic lines such that each intersection of two lines has one of two stable magnetizations which are located at 0* and 180* relative to the axis of said magnetic lines.

Claim 7

A memory device according to claim 4; further comprising magnetic flux keepers of magnetic films deposited on respective ones of said magnetic lines except the portions thereof opposed to said magnetic lines.

Claim 8

A memory device according to claim 4; wherein said magnetic lines have a width within the range of 20 to 200 microns.