US3585616A
Expired / Lapsed
US
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Information storage element
Assignee: International Business Machines Corp
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Filing: 1968-12-24
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Granted: 1971-06-15
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Expires: 1988-12-24
Abstract
Abstract A coupled film magnetic memory element is disclosed which incorporates a field applying element which is disposed between a substrate and the lower of two orthogonally disposed conductors. In a preferred embodiment, a pair of closed easy axis (CEA) magnetic films are disposed about a bit conductor. These elements are disposed orthogonally relative to a word conductor and a field applying magnetic material which is disposed in underlying and coextensive relationships with the word line. A conductive substrate is disposed adjacent the field applying film and supports all the above described elements. In arrangements having fast pulse rise times, a pulse applied to the word line produces a high field in the field applying film such that for a given amount flux to be made available for switching a storage film, a substantially smaller word current is required. In addition, because the bit line is spaced further from the substrate, it presents a high impedance and consequently provides a higher sense voltage at the input of a sense amplifier.
Inventors
- 👤 Nicholas J Mazzeo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:04
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/02; G11C11/04; G01; G01L; G01L19/00; G01L19/08; G11C11/14; G11C11/15
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
85 words
A magnetic memory element comprising: a ground plane, a word conductor and a bit conductor disposed in orthogonal relationship to each other above said ground plane, current means connected to said word conductor for providing a region of maximum aiding magnetic field between said conductors and said ground plane, a pair of magnetic films disposed on opposite sides of one said pair of conductors, and a field applying keeper element disposed in said region of maximum magnetic field between said ground plane and said conductors.
Claim 2
Dependent Claim
85 words
A magnetic memory element comprising: a ground plane, a word conductor and a bit conductor disposed in orthogonal relationship to each other above said ground plane, current means connected to said word conductor for providing a region of maximum aiding magnetic field between said conductors and said ground plane, a pair of magnetic films disposed on opposite sides of one said pair of conductors, and a field applying keeper element disposed in said region of maximum magnetic field between said ground plane and said conductors.
Claim 3
Dependent Claim
20 words
A magnetic memory element according to claim 1 wherein said one of said pair of conductors is a bit-sense line.
Claim 4
Dependent Claim
20 words
A magnetic memory element according to claim 1 wherein said other of said pair of conductors is a word line.
Claim 5
Dependent Claim
20 words
A magnetic memory element according to claim 1 wherein said one of said pair of conductors is a word line.
Claim 6
Dependent Claim
20 words
A magnetic memory element according to claim 1 wherein said other of said pair of conductors is a bit-sense line.
Claim 7
Dependent Claim
41 words
A magnetic memory element according to claim 1 wherein said pair of magnetic films are closed easy axis (CEA) films. 7 A magnetic memory element according to claim 1 wherein said pair of magnetic films are closed hard axis (CHA) films.
Claim 8
Dependent Claim
40 words
A magnetic memory element according to claim 1 wherein said field applying element is a film of magnetic material. 9 A magnetic memory element according to claim 1 wherein said field applying element is a film of nonoriented magnetic material.
Claim 9
Dependent Claim
20 words
A magnetic memory element according to claim 1 wherein said field applying element is a film of oriented magnetic material.
Claim 10
Dependent Claim
40 words
A magnetic memory element according to claim 1 further including a source of pulses electrically coupled to each of said pair of conductors for applying orthogonally oriented magnetic fields to switch said films into either of two possible remanent states.
Claim 11
Dependent Claim
21 words
A magnetic memory element according to claim 1 further including a sense amplifier connected to one of said pair of conductors.
Claim 12
Dependent Claim
31 words
A magnetic memory element according to claim 1 wherein the permeability of said field applying element is at least five times greater than the permeability of said pair of magnetic films.
Claim 13
Dependent Claim
110 words
A magnetic memory element comprising: a conductive substrate, a first layer of insulating material overlying said substrate, first and second orthogonally related bit and word conductors disposed over said substrate, current means connected to said word conductor for providing a region of maximum magnetic field between said conductors and said substrate, a second layer of insulating material disposed on said first conductor, a pair of storage magnetic films disposed on opposite sides of said second conductor and coextensive therewith, and a field applying keeper element disposed in said region of maximum magnetic field between and contiguous with (said first conductor) one of said conductors and said first layer of insulation.
Claim 14
Dependent Claim
110 words
A magnetic memory element comprising: a conductive substrate, a first layer of insulating material overlying said substrate, first and second orthogonally related bit and word conductors disposed over said substrate, current means connected to said word conductor for providing a region of maximum magnetic field between said conductors and said substrate, a second layer of insulating material disposed on said first conductor, a pair of storage magnetic films disposed on opposite sides of said second conductor and coextensive therewith, and a field applying keeper element disposed in said region of maximum magnetic field between and contiguous with (said first conductor) one of said conductors and said first layer of insulation.
Claim 15
Dependent Claim
122 words
A magnetic memory element according to claim 14 wherein said conductive substrate and said conduction are copper, said nonmagnetic material is Pyre M-L, said magnetic films and said field applying films are of a nickel-iron composition. 16 A magnetic memory element including a pair of orthogonally related word and bit conductors disposed above a ground plane, current means connected to said word conductor for providing a region of maximum magnetic field between said conductors and said ground plane, and at least a single magnetic storage film disposed adjacent one of said pair of conductors characterized by a field applying keeper element, the major portion of which is interposed between said conductors and said ground plane in said region of maximum mAgnetic field.
Claim 16
Dependent Claim
24 words
A magnetic memory element according to claim 16 wherein said field applying element includes extensions spaced from and extending toward said magnetic storage film.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-14 | 1974-12-14 | 1975-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-14 | 1978-12-14 | 1979-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-14 | 1982-12-14 | 1983-06-15 | $7700.00 | Window Closed / Lapsed |