US5063569A
Expired / Lapsed
US
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Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces
Assignee: Nokia Bell Labs
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Filing: 1990-12-19
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Granted: 1991-11-05
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Expires: 2010-12-19
Abstract
Abstract A vertical-cavity surface-emitting semiconductive laser has non-epitaxial multilayered dielectric reflectors located on both its top and its bottom surfaces, in order to facilitate fabrication of the reflectors and achieve high optical cavity gain and low electrical power dissipation.
Inventors
- 👤 Ya-Hong Xie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:07
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18361; H01S5/18369; H01S5/04; H01S5/042; H01S5/0425; H01S5/04256; H01S5/06; H01S5/062; H01S5/06203; H01S5/18308; H01S5/18341; H01S5/20; H01S5/2054; H01S5/2059
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
97 words
In a vertical-cavity semiconductor laser structure: (a) a first epitaxially grown semiconductor buffer layer having a planar top surface; (b) a second epitaxially grown semiconductor buffer layer having a planar bottom surface; (c) an epitaxially grown semiconductive active layer sandwiched between the first and second buffer layers; (d) a first multilayered dielectric reflector located on the top surface of the first buffer layer; and (e) a second multilayered dielectric reflector located on the bottom surface of the second buffer layer, the first and second reflectors being non-epitaxial with respect to the first and second buffer layers, respectively.
Claim 2
Dependent Claim
97 words
In a vertical-cavity semiconductor laser structure: (a) a first epitaxially grown semiconductor buffer layer having a planar top surface; (b) a second epitaxially grown semiconductor buffer layer having a planar bottom surface; (c) an epitaxially grown semiconductive active layer sandwiched between the first and second buffer layers; (d) a first multilayered dielectric reflector located on the top surface of the first buffer layer; and (e) a second multilayered dielectric reflector located on the bottom surface of the second buffer layer, the first and second reflectors being non-epitaxial with respect to the first and second buffer layers, respectively.
Claim 3
Dependent Claim
22 words
The structure of claim 1 in which the first multilayered reflector is composed of alternating amorphous layers of first and second materials.
Claim 4
Dependent Claim
23 words
The structure of claim 2 in which the second multilayered reflector is composed of alternating amorphous layers of the first and second materials.
Claim 5
Dependent Claim
60 words
The structure of claim 1 further comprising a first electrode layer having a first thickness and having a bottom planar surface physically contacting the top planar surface of the first buffer layer at an areal portion thereof that extends laterally for a first distance which is at least about ten times larger than the thickness of the first electrode layer.
Claim 6
Dependent Claim
24 words
The structure of claim 4 in which a side surface of the first electrode layer contacts a side surface of the first dielectric reflector.
Claim 7
Dependent Claim
56 words
The structure of claim 4 further comprising a second electrode layer a second thickness having a planar top surface physically contacting the bottom surface of the second buffer layer at an areal portion thereof that extends laterally for a second distance which is at least ten times larger than the thickness of the second electrode layer.
Claim 8
Dependent Claim
24 words
The structure of claim 6 in which a side surface of the second electrode physically contacts a side surface of the second dielectric reflector.
Claim 9
Dependent Claim
21 words
The structure of claim 6 further comprising a heat sink layer affixed to a bottom surface of the second electrode layer.
Claim 10
Dependent Claim
57 words
The structure of claim 7 further comprising an essentially insulating or semi-insulating region for confining electrical current, flowing between the first and second electrodes layers, the insulating or semi-insulating region being located in a portion of the active layer and having an edge which is aligned with an edge of each of the first and second reflectors.
Claim 11
Dependent Claim
35 words
The structure of claim 1 in which the first multilayered dielectric reflector consists essentially of a first plurality of quarter wavelength layers sufficient to produce an optical reflectivity of at least about 99.0 per centum.
Claim 12
Dependent Claim
35 words
The structure of claim 9 in which the second multilayered dielectric reflector consists essentially of a second plurality of quarter wavelength layers sufficient to produce an optical reflectivity of at least about 99.5 per centum.
Claim 13
Dependent Claim
16 words
The structure of claim 11 in which the reflectivity is at least about 99.9 per centum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-04 | 1995-05-06 | 1995-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-04 | 1999-05-06 | 1999-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-04 | 2003-05-06 | 2003-11-05 | $7700.00 | Window Closed / Lapsed |