US5057908A
Expired / Lapsed
US
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High power semiconductor device with integral heat sink
Assignee: Iowa State University Research Foundation Inc
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Filing: 1990-07-10
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Granted: 1991-10-15
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Expires: 2010-07-10
Abstract
Abstract A high power semiconductor device with integral heat sink capable of accommodating substantial heat flux on the order of one kw per cm 2 . The integral heat sink is formed on the active surface of the semiconductor and utilizes an AlN thin film of high purity to provide a low thermal impedance heat conductor for removing heat directly from the active semiconductor surface. A microchannel heat sink is formed on the A1N thin film and has a source of cooling fluid flowing through the microchannel heat sink for conducting heat away from the sink. The result is the ability to conduct large heat fluxes away from the intimately contacted heat generating semiconductor surface to the cooling fluid in the microchannel heat sink and thus operate the semiconductor under substantially higher power than has been practical heretofore in a device of such simplicity.
Inventors
- 👤 Robert J. Weber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:43
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/259; H10W40/40; H10W40/47
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
119 words
A high power semiconductor device with integral heat sink comprising, in combination: an integrated circuit having a substrate and an active semiconductor region formed on one surface of the substrate; an AlN monolithic thin film grown on the said one surface overlying the active semiconductor region, the AlN thin film having a sufficiently low impurity content to cause said thin film to function as a low thermal resistance heat conductor removing heat from the active semiconductor region with which said thin film is in contact; and a microchannel heat sink in thermal contact with the AlN thin film, the microchannel heat sink being supplied with a source of cooling fluid for conducting heat away from the microchannel heat sink.
Claim 2
Dependent Claim
119 words
A high power semiconductor device with integral heat sink comprising, in combination: an integrated circuit having a substrate and an active semiconductor region formed on one surface of the substrate; an AlN monolithic thin film grown on the said one surface overlying the active semiconductor region, the AlN thin film having a sufficiently low impurity content to cause said thin film to function as a low thermal resistance heat conductor removing heat from the active semiconductor region with which said thin film is in contact; and a microchannel heat sink in thermal contact with the AlN thin film, the microchannel heat sink being supplied with a source of cooling fluid for conducting heat away from the microchannel heat sink.
Claim 3
Dependent Claim
30 words
The combination as set out in claim 1 further including a low thermal resistance interface for forming an intimate connection between the AlN thin film and the microchannel heat sink.
Claim 4
Dependent Claim
43 words
The combination a set forth in claim 1 wherein the microchannel heat sink comprises a plated metal heat sink having a plurality of microchannels formed therein, and means coupling the microchannels to the fluid source for carrying heat from said microchannel heat sink.
Claim 5
Dependent Claim
23 words
The combination as set forth in claim 3 wherein the microchannels have a width in the range between about 50 and 1000 microns.
Claim 6
Dependent Claim
22 words
The combination as set forth in claim 4 wherein the AlN thin film is on the order of 10 microns in thickness.
Claim 7
Dependent Claim
43 words
The combination as set forth in claim 2 wherein the microchannel heat sink comprises a plated metal heat sink having a plurality of microchannels formed therein, and means coupling the microchannels to the fluid source for carrying heat from said microchannel heat sink.
Claim 8
Dependent Claim
23 words
The combination as set forth in claim 6 wherein the microchannels have a width in the range between about 50 and 1000 microns.
Claim 9
Dependent Claim
22 words
The combination as set forth in claim 7 wherein the AlN thin film is on the order of 10 microns in thickness.
References Cited (Backward Citations)
US3716759A
Cited
US4517584A
Cited
US4926242A
Cited
US4796077A
Cited
US4742024A
Cited
US4803546A
Cited
US4908695A
Cited
US4946376A
Cited
US4987478A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-14 | 1995-04-15 | 1995-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-14 | 1999-04-15 | 1999-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-14 | 2003-04-15 | 2003-10-15 | $7700.00 | Window Closed / Lapsed |