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US5057491A
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High current density tunnel junction fabrication from high temperature superconducting oxides
Assignee: California Institute of Technology
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Filing: 1987-12-16
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Granted: 1991-10-15
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Expires: 2007-12-16
Abstract
Abstract High current density tunnel junction devices (12) are fabricated by ion implantation of ions (26) to form buried semiconducting layers (24) in originally homogeneous high temperature superconducting oxide layers (18) formed on superconducting oxide substrates (14). Contacts (20, 22) are made to the oxide substrate and to the oxide layer. In an alternative embodiment, the junction devices (12') are fabricated by ion implantation of ions in portions of the substrate. In this embodiment, contacts are made to the oxide substrate and to portions of the substrate overlying the buried semiconducting junctions.
Inventors
- 👤 Robert M. Housley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:11
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0912; H10N60/0941; Y; Y10; Y10S; Y10S505/00; Y10S505/775; Y10S505/776; Y10S505/777; Y10S505/778; Y10S505/779; Y10S505/78
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
96 words
A two-terminal high current density tunnel junction device consisting essentially of: (a) a first oxide layer consisting essentially of a high temperature superconducting oxide; (b) a barrier layer formed between said first oxide layer and a second oxide layer having the same composition as said first oxide layer, said barrier layer having the same composition as said first and second oxide layers but having semiconducting properties provided by ions therein to form a tunnel junction; and (c) a pair of electrical contacts, one contacting said first oxide layer and the other contacting said second oxide layer.
Claim 2
Dependent Claim
96 words
A two-terminal high current density tunnel junction device consisting essentially of: (a) a first oxide layer consisting essentially of a high temperature superconducting oxide; (b) a barrier layer formed between said first oxide layer and a second oxide layer having the same composition as said first oxide layer, said barrier layer having the same composition as said first and second oxide layers but having semiconducting properties provided by ions therein to form a tunnel junction; and (c) a pair of electrical contacts, one contacting said first oxide layer and the other contacting said second oxide layer.
Claim 3
Dependent Claim
20 words
The device of claim 1 wherein said second oxide layer is a separate layer formed on said first oxide layer.
Claim 4
Dependent Claim
25 words
The device of claim 1 wherein said second oxide layer is part of said first oxide layer and is separated therefrom by said barrier layer.
Claim 5
Dependent Claim
40 words
The device of claim 1 wherein said superconducting oxide layer comprises La 2-x A x CuO 4 , where A is selected from the group consisting of Ba, Sr and Ca, having a T C of at least about 40K.
Claim 6
Dependent Claim
9 words
The device of claim 4 wherein A is Sr.
Claim 7
Dependent Claim
50 words
The device of claim 1 wherein said superconducting oxide layer consists essentially of LnBa 2 Cu 3 O 7 , where Ln is at least one element selected from the group consisting of yttrium and the trivalent rare earths, said layer having a T C of at least about 90K.
Claim 8
Dependent Claim
9 words
The device of claim 6 wherein Ln is Y.
Claim 9
Dependent Claim
27 words
The device of claim 1 wherein said ions are selected from the group consisting of elements which induce the transition from the superconducting to the semiconducting state.
Claim 10
Dependent Claim
19 words
The device of claim 8 wherein said ions are selected from the group consisting of F, As and O.
Claim 11
Dependent Claim
100 words
An array of two-terminal high current density tunnel junction devices, each device consisting essentially of: (a) a first oxide layer consisting essentially of a high temperature superconducting oxide; (b) a barrier layer formed between said first oxide layer and a second oxide layer having the same composition as said first oxide layer, said barrier layer having the same composition as said first and second oxide layers but having semiconducting properties provided by ions therein to form a tunnel junction; and (c) a pair of electrical contacts, one contacting said first oxide layer and the other contacting said second oxide layer.
Claim 12
Dependent Claim
100 words
An array of two-terminal high current density tunnel junction devices, each device consisting essentially of: (a) a first oxide layer consisting essentially of a high temperature superconducting oxide; (b) a barrier layer formed between said first oxide layer and a second oxide layer having the same composition as said first oxide layer, said barrier layer having the same composition as said first and second oxide layers but having semiconducting properties provided by ions therein to form a tunnel junction; and (c) a pair of electrical contacts, one contacting said first oxide layer and the other contacting said second oxide layer.
Claim 13
Dependent Claim
20 words
The array of claim 10 wherein said second oxide layer is a separate layer formed on said first oxide layer.
Claim 14
Dependent Claim
25 words
The array of claim 10 wherein said second oxide layer is part of said first oxide layer and is separated therefrom by said barrier layer.
Claim 15
Dependent Claim
40 words
The array of claim 10 wherein said superconducting oxide layer comprises La 2-x A x CuO 4 , where A is selected from the group consisting of Ba, Sr and Ca, having a T C of at least about 40K.
Claim 16
Dependent Claim
9 words
The array of claim 13 wherein A is Sr.
Claim 17
Dependent Claim
50 words
The array of claim 10 wherein said superconducting oxide layer consists essentially of LnBa 2 Cu 3 O 7 , where Ln is at least one element selected from the group consisting of yttrium and the trivalent rare earths, said layer having a T C of at least about 90K.
Claim 18
Dependent Claim
9 words
The array of claim 15 wherein Ln is Y.
Claim 19
Dependent Claim
27 words
The array of claim 10 wherein said ions are selected from the group consisting of elements which induce the transition from the superconducting to the semiconducting state.
Claim 20
Dependent Claim
19 words
The array of claim 17 wherein said ions are selected from the group consisting of F, As and O.
References Cited (Backward Citations)
No citation records indexed.
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