US5055911A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device package utilizing a solder flow prevention wall
Assignee: Mitsubishi Electric Corp
•
Filing: 1990-07-27
•
Granted: 1991-10-08
•
Expires: 2010-07-27
Abstract
Abstract A semiconductor package includes a base body, metallized layers formed on the base body and having a die-pad area and a wire bonding area, a solder flow prevention wall which is formed on the metallized layers between the die-pad area and a wire bonding area preventing solder from flowing to the wire bonding area while a semiconductor chip is being soldered to the die-pad area.
Inventors
- 👤 Toshikazu Ogata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 21:37
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/657; H10W76/00; H10W76/10; H10W76/12; H10W76/15; H10W76/157; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/073; H10W72/07331; H10W72/07336; H10W72/075; H10W72/07551; H10W72/07554; H10W72/20; H10W72/29; H10W72/30; H10W72/351; H10W72/352; H10W72/381; H10W72/387; H10W72/50; H10W72/531; H10W72/5363; H10W72/541; H10W72/5445; H10W72/547; H10W72/551; H10W72/552; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754; H10W90/755
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
121 words
A semiconductor package comprising: a base body; a metallized layer disposed on said base body and including a die-pad area for mounting a semiconductor chip by soldering and a wire bonding area for bonding wires; a solder flow prevention wall disposed on said metallized layer separating said die-pad area from said wire bonding area; and metal layers respectively disposed on said die-pad area and said wire bonding area separated by said solder flow prevention wall wherein said solder flow prevention wall protrudes from said metallized layer and beyond said metal layers to form a barrier stopping molten solder from flowing to said wire bonding area from said die bonding area when a semiconductor chip is being soldered to said die-pad area.
Claim 2
Dependent Claim
121 words
A semiconductor package comprising: a base body; a metallized layer disposed on said base body and including a die-pad area for mounting a semiconductor chip by soldering and a wire bonding area for bonding wires; a solder flow prevention wall disposed on said metallized layer separating said die-pad area from said wire bonding area; and metal layers respectively disposed on said die-pad area and said wire bonding area separated by said solder flow prevention wall wherein said solder flow prevention wall protrudes from said metallized layer and beyond said metal layers to form a barrier stopping molten solder from flowing to said wire bonding area from said die bonding area when a semiconductor chip is being soldered to said die-pad area.
Claim 3
Dependent Claim
14 words
A package according to claim 1, wherein said solder flow prevention wall is glass.
Claim 4
Dependent Claim
13 words
A package according to claim 1, wherein said base body is a ceramic.
Claim 5
Dependent Claim
39 words
A package according to claim 3, further comprising: a ceramic frame positioned on said base body and having an opening for accommodating said die-pad area and said wire bonding area; and a plurality of leads positioned on said frame.
Claim 6
Dependent Claim
12 words
A package according to claim 1, wherein said electrode layer is Au.
Claim 7
Dependent Claim
13 words
A package according to claim 1, wherein said electrode layer is an Ag.
Claim 8
Dependent Claim
142 words
A semiconductor package comprising: a base body; a metallized layer disposed on said base body and including a die-pad area for mounting a semiconductor chip by soldering and a wire bonding area for bonding wires; a metallic surface preparation layer disposed on said metallized layer on said die-pad area and on said wore bonding area; a solder flow prevention wall disposed on said surface preparation layer separating said die-pad area from said wire bonding area; and a metal electrode layer disposed on said surface preparation layer on said die-pad area and said wire bonding area wherein said solder flow prevention wall protrudes from said surface preparation layer and beyond said electrode layer to form a barrier stopping molten solder from flowing to said wire bonding area from said die bonding area when a semiconductor chip is being soldered to said die-pad area.
Claim 9
Dependent Claim
142 words
A semiconductor package comprising: a base body; a metallized layer disposed on said base body and including a die-pad area for mounting a semiconductor chip by soldering and a wire bonding area for bonding wires; a metallic surface preparation layer disposed on said metallized layer on said die-pad area and on said wore bonding area; a solder flow prevention wall disposed on said surface preparation layer separating said die-pad area from said wire bonding area; and a metal electrode layer disposed on said surface preparation layer on said die-pad area and said wire bonding area wherein said solder flow prevention wall protrudes from said surface preparation layer and beyond said electrode layer to form a barrier stopping molten solder from flowing to said wire bonding area from said die bonding area when a semiconductor chip is being soldered to said die-pad area.
Claim 10
Dependent Claim
14 words
A package according to claim 7 wherein said solder flow prevention wall is glass.
Claim 11
Dependent Claim
122 words
A semiconductor package comprising: a base body; a metallized layer disposed on said base body and including a die-pad area for mounting a semiconductor chip by soldering and a wire bonding area for bonding wires; a metallic surface preparation layer and a metal electrode layer successively disposed on said metallized layer on said die-pad area and on said wore bonding area; and a solder flow prevention wall disposed on said electrode layer separating said die-pad area from said wire bonding area wherein said solder flow prevention wall protrudes from said electrode layer to form a barrier stopping molten solder from flowing to said wire bonding area from said die bonding area when a semiconductor chip is being soldered to said die-pad area.
Claim 12
Dependent Claim
122 words
A semiconductor package comprising: a base body; a metallized layer disposed on said base body and including a die-pad area for mounting a semiconductor chip by soldering and a wire bonding area for bonding wires; a metallic surface preparation layer and a metal electrode layer successively disposed on said metallized layer on said die-pad area and on said wore bonding area; and a solder flow prevention wall disposed on said electrode layer separating said die-pad area from said wire bonding area wherein said solder flow prevention wall protrudes from said electrode layer to form a barrier stopping molten solder from flowing to said wire bonding area from said die bonding area when a semiconductor chip is being soldered to said die-pad area.
Claim 13
Dependent Claim
14 words
A package according to claim 9 wherein said solder flow prevention wall is glass.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |