US4692789A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor apparatus
Assignee: Toyota Central R&D Labs Inc
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Filing: 1983-07-22
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Granted: 1987-09-08
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Expires: 2003-07-22
Abstract
Abstract In a semiconductor apparatus for controlling a large current at a high speed, a lead conductor coupled to a control electrode of a semiconductor device sealed in a package comprises a conductor plate having a width equal to or greater than one side or a diameter of the semiconductor device, thereby decreasing impedance against a high-frequency input signal.
Inventors
- 👤 Yoshio Nakamura
- 👤 Susumo Sugiyama
- 👤 Jun-ichi Nishizawa
- 👤 Tadahiro Ohmi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:59
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10W72/00; H10W72/30; H10W44/226; H10W72/381; H10W72/50; H10W72/531; H10W72/533; H10W72/534; H10W72/541; H10W72/5445; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
227 words
A semiconductor apparatus for controlling large current at high speed, comprising: a plurality of rectangular semiconductor device substrates each having first and second principal surfaces and including a first main electrode and a control electrode on said first principal surface and a second main electrode on said second principal surface, a first lead conductor of sheet-like metal having good thermal conductivity, said plurality of semiconductor device substrates being aligned in an array on said first lead conductor, said first lead conductor having a sufficient width and length for the placement of said plurality of semiconductor device substrates thereon, said first conductor being electrically connected to said second main electrode, an insulator surrounding said plurality of semiconductor device substrates, and relatively wide second and third sheet-like lead conductors having substantially constant widths along the entire current paths and electrically insulated from each other in spaced opposed relationship with the array of said semiconductor device substrates interposed therebetween, said second and third lead conductors each having a width greater than the spacing therebetween and at least equal to the sum of the longer sides of said plurality of semiconductor device substrates, said second lead conductor being electrically connected to said first main electrode of each of said semiconductor device substrates, and said third lead conductor being electrically connected to said control electrode of each of said semiconductor device substrates.
Claim 2
Dependent Claim
227 words
A semiconductor apparatus for controlling large current at high speed, comprising: a plurality of rectangular semiconductor device substrates each having first and second principal surfaces and including a first main electrode and a control electrode on said first principal surface and a second main electrode on said second principal surface, a first lead conductor of sheet-like metal having good thermal conductivity, said plurality of semiconductor device substrates being aligned in an array on said first lead conductor, said first lead conductor having a sufficient width and length for the placement of said plurality of semiconductor device substrates thereon, said first conductor being electrically connected to said second main electrode, an insulator surrounding said plurality of semiconductor device substrates, and relatively wide second and third sheet-like lead conductors having substantially constant widths along the entire current paths and electrically insulated from each other in spaced opposed relationship with the array of said semiconductor device substrates interposed therebetween, said second and third lead conductors each having a width greater than the spacing therebetween and at least equal to the sum of the longer sides of said plurality of semiconductor device substrates, said second lead conductor being electrically connected to said first main electrode of each of said semiconductor device substrates, and said third lead conductor being electrically connected to said control electrode of each of said semiconductor device substrates.
Claim 3
Dependent Claim
63 words
An apparatus according to claim 1 wherein said first lead conductor is connected to said second main electrode on said second principal surface by a molybdenum plate, and said second and third lead conductors are connected to said first main electrode on said first principal surface and to said control electrode on said first principal surface, respectively, by a plurality of thin connectors.
Claim 4
Dependent Claim
35 words
An apparatus according to claim 2, further comprising a conductor plate supported on said second and third lead conductors by an insulator, said second lead conductor being connected to said conductor plate by a conductor.
Claim 5
Dependent Claim
26 words
An apparatus according to claim 1 wherein a portion of one of said first to third lead conductors is bent perpendicularly to a remaining portion thereof.
Claim 6
Independent Claim
89 words
An apparatus according to claim, 1 wherein said first lead conductor is connected to said second main electrode on said second major surface by a molybdenum plate, said third lead conductor is connected to said control electrode on said first major surface by a plurality of thin, connectors and said second lead conductor is on an insulator on said third lead conductor and on another insulator on said first lead conductor, and said first main electrode is electrically connected to said second lead conductor by a further molybdenum plate.
Claim 7
Dependent Claim
17 words
An apparatus according to claim 1 wherein said second and third lead conductors are rectangular in shape.
Claim 8
Dependent Claim
15 words
An apparatus according to claim 6 wherein said first lead conductor is of rectangular shape.
Claim 9
Dependent Claim
32 words
An apparatus according to claim 7 wherein the dimensions and materials of said conductors and said semiconductor device substrates permit switching of currents between tens and thousands of amperes at high speed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-07 | 1991-03-09 | 1991-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-07 | 1995-03-09 | 1995-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-07 | 1999-03-09 | 1999-09-08 | $7700.00 | Window Closed / Lapsed |