US5055890A
Expired / Lapsed
US
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Nonvolatile semiconductor memory having three dimension charge confinement
Assignee: United States Department of Energy
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Filing: 1990-01-25
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Granted: 1991-10-08
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Expires: 2010-01-25
Abstract
Abstract A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.
Inventors
- 👤 L. Ralph Dawson
- 👤 Gordon C. Osbourn
- 👤 Paul S. Peercy
- 👤 Harry T. Weaver
- 👤 Thomas E. Zipperian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D30/801; H10D30/803
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
143 words
A nonvolatile memory semiconductor device comprising: (a) a substrate; (b) a first barrier layer covering said substrate; (c) a sense channel covering said first barrier layer; (d) a second barrier layer covering said sense channel; (e) a storage channel covering said second barrier layer; (f) a third barrier layer covering said storage channel; (g) a storage contact means for allowing charge to laterally flow through said storage channel, said contact means defining a horizontal boundary of said storage channel; (h) a storage portion, within said storage channel, whose inner and outer horizontal boundaries are defined by a confining means, and whose upper and lower vertical boundaries are defined by said second and third barrier layers; and (i) a confining means situated in said third barrier layer for retaining charge in said storage portion, where said retained charge is sensed by said sense channel.
Claim 2
Dependent Claim
143 words
A nonvolatile memory semiconductor device comprising: (a) a substrate; (b) a first barrier layer covering said substrate; (c) a sense channel covering said first barrier layer; (d) a second barrier layer covering said sense channel; (e) a storage channel covering said second barrier layer; (f) a third barrier layer covering said storage channel; (g) a storage contact means for allowing charge to laterally flow through said storage channel, said contact means defining a horizontal boundary of said storage channel; (h) a storage portion, within said storage channel, whose inner and outer horizontal boundaries are defined by a confining means, and whose upper and lower vertical boundaries are defined by said second and third barrier layers; and (i) a confining means situated in said third barrier layer for retaining charge in said storage portion, where said retained charge is sensed by said sense channel.
Claim 3
Dependent Claim
21 words
The nonvolatile memory semiconductor device of claim 1 wherein said barrier layers, storage channel, and substrate consist of Group II/V semiconductors.
Claim 4
Dependent Claim
58 words
The nonvolatile memory semiconductor device of claim 1, said confining means further comprising: (a) a plurality of grooves within said third barrier; (b) an isolation means within said grooves; and (c) an isolation contact means connected to said isolation material wherein the application of voltage to said isolation means through said isolation contact means controls said confining means.
Claim 5
Dependent Claim
19 words
The nonvolatile memory semiconductor device of claim 3 wherein said isolation means is provided by a controllable Schottky barrier.
Claim 6
Dependent Claim
23 words
The nonvolatile memory semiconductor device of claim 3 wherein said isolation means is a semiconductor material forming a heterojunction with said storage channel.
Claim 7
Dependent Claim
97 words
The nonvolatile memory semiconductor device of claim 4 or 5, further comprising: a sense channel contact means comprising a source and a drain, both source and drain electrically connected to said sense channel, said sense channel contact means allowing charge to laterally flow through said sense channel, said charge flow through said sense channel being affected by the presence of said retaining charge in said storage portion; and said sense channel is vertically spaced a sufficient distance from said confining means so that said isolation means does not affect the flow of charge through said sense channel.
Claim 8
Dependent Claim
56 words
The nonvolatile memory semiconductor device of claim 6, further comprising: a gate contact means located vertically above said storage portion, said gate contact means to electrically cooperate with said storage contact means and said isolation contact means for controllably permitting charge to laterally flow through said storage channel, wherein said device is a field effect transistor.
Claim 9
Dependent Claim
14 words
The nonvolatile memory semiconductor device of claim 7 wherein said channels consist of GaAs.
Claim 10
Dependent Claim
14 words
The nonvolatile memory semiconductor device of claim 7 wherein said channels consist of InAs.
Claim 11
Dependent Claim
45 words
The nonvolatile memory semiconductor device of claim 7 wherein said gate contact means is an alternate sensing means for detecting the presence of a charge within said storage portion of said storage channel by capacitance measurement of said storage portion through said gate contact means.
Claim 12
Dependent Claim
23 words
The nonvolatile memory semiconductor device of claim 7 wherein said sense channel contact means and said storage contact means are the same contacts.
Claim 13
Dependent Claim
86 words
The nonvolatile memory semiconductor device of claim 11 wherein: said storage contact means and sense channel contact means further comprise two ohmic contact regions, one of said ohmic contact regions surrounding the other ohmic contact region; said gate contact means is intermediate between said ohmic contact regions; and one of said grooves is intermediate between said gate contact means and one of said ohmic contact means, and another of said grooves is intermediate between said gate contact means and the other of said ohmic contact regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |