US5055810A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ultra-high speed light activated microwave switch/modulation using photoreactive effect
Assignee: Raytheon Co
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Filing: 1990-08-29
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Granted: 1991-10-08
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Expires: 2010-08-29
Abstract
Abstract The RF/microwave switch/modulator uses an optically controlled diode 20. The reactance of the diode may be varied by varying the illumination intensity. In this fashion, the photodiode in conjunction with an external circuit can switch or modulate a microwave signal by varying the reactance of the diode using a laser light source or the like. The bias voltage may be varied to electronically tune the diode so that the microwave frequency of operation can be electronically controlled.
Inventors
- 👤 Michael de la Chapelle
- 👤 Hui-pin Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:34
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H01; H01P; H01P1/00; H01P1/10; H01P1/15; H04; H04B; H04B2210/00; H04B2210/006
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
111 words
A high speed switch comprising: a body of semiconductor material having a diode junction therein and contacts on opposing surfaces thereof, said contacts and diode junction defining a microwave shunt reactance device having an operating frequency; a photoactive area at one of said surfaces such that said microwave shunt reactance device is switched between a signal matching state and a signal reflecting state in response to a change in illumination intensity upon said photoactive area; a source of optical illumination for illuminating said photoactive area; and a variable voltage supply coupled to said contacts for changing the voltage supplied by said voltage supply to cause a change in said operating frequency.
Claim 2
Dependent Claim
111 words
A high speed switch comprising: a body of semiconductor material having a diode junction therein and contacts on opposing surfaces thereof, said contacts and diode junction defining a microwave shunt reactance device having an operating frequency; a photoactive area at one of said surfaces such that said microwave shunt reactance device is switched between a signal matching state and a signal reflecting state in response to a change in illumination intensity upon said photoactive area; a source of optical illumination for illuminating said photoactive area; and a variable voltage supply coupled to said contacts for changing the voltage supplied by said voltage supply to cause a change in said operating frequency.
Claim 3
Dependent Claim
16 words
The switch as claimed in claim 1 wherein one of said contacts is an ohmic contact.
Claim 4
Dependent Claim
16 words
The switch as claimed in claim 2 wherein another of said contacts is a Schottky contact.
Claim 5
Dependent Claim
16 words
The switch as claimed in claim 1 wherein one of said contacts is a Schottky contact.
Claim 6
Dependent Claim
31 words
The switch as claimed in claim 1 wherein said semiconductor material is selected from the group consisting of silicon, gallium arsenide, germanium arsenide, indium, gallium arsenide and indium gallium arsenide phosphate.
Claim 7
Dependent Claim
16 words
The switch as claimed in claim 1 wherein said source of optical illumination is a laser.
Claim 8
Dependent Claim
28 words
The switch as claimed in claim 1 further comprising: a resonant circuit coupled to said switch, said resonant circuit being selectively detuned when said photoactive area is illuminated.
Claim 9
Dependent Claim
32 words
The switch as claimed in claim 7 wherein said resonant circuit is an impedance matching circuit for substantially negating and resonating the reactance of said switch when said photoactive area is unilluminated.
Claim 10
Dependent Claim
25 words
The switch as claimed in claim 3 wherein said impedance matching circuit transforms said reactance of switch to a system impedance of nominally fifty ohms.
Claim 11
Dependent Claim
20 words
The switch as claimed in claim 8 wherein said impedance matching circuit and said switch define a one-port reflection/absorption switch.
Claim 12
Dependent Claim
21 words
The switch as claimed in claim 1 further comprising: a circulator for providing separate input and output ports to said switch.
Claim 13
Dependent Claim
22 words
The switch as claimed in claim 1 further comprising: a resonating inductance coupled to said switch to define a two-port transmission/reflection switch.
Claim 14
Dependent Claim
101 words
A high speed microwave modulator comprising: a body of semiconductor material having a diode junction therein and contacts on opposing surfaces thereof, said contacts and diode junction defining a microwave signal shunt reactance device having an operating frequency; a photoactive area at one of said surfaces such that said microwave signal is amplitude modulated in response to modulation of illumination intensity upon said photoactive area; a source of optical illumination for illuminating said photoactive area; and a variable voltage supply coupled to said contacts for changing the voltage supplied by said voltage supply to cause a change in said operating frequency.
Claim 15
Dependent Claim
101 words
A high speed microwave modulator comprising: a body of semiconductor material having a diode junction therein and contacts on opposing surfaces thereof, said contacts and diode junction defining a microwave signal shunt reactance device having an operating frequency; a photoactive area at one of said surfaces such that said microwave signal is amplitude modulated in response to modulation of illumination intensity upon said photoactive area; a source of optical illumination for illuminating said photoactive area; and a variable voltage supply coupled to said contacts for changing the voltage supplied by said voltage supply to cause a change in said operating frequency.
Claim 16
Dependent Claim
16 words
The modulator as claimed in claim 13 wherein one of said contacts is an ohmic contact.
Claim 17
Dependent Claim
16 words
The modulator as claimed in claim 14 wherein another of said contacts is a Schottky contact.
Claim 18
Dependent Claim
16 words
The modulator as claimed in claim 13 wherein one of said contacts is a Schottky contact.
Claim 19
Dependent Claim
31 words
The modulator as claimed in claim 13 wherein said semiconductor material is selected from the group consisting of silicon, gallium arsenide, garmanium arsenide, indium, gallium arsenide and indium gallium arsenide phosphate.
Claim 20
Dependent Claim
16 words
The modulator as claimed in claim 13 wherein said source of optical illumination is a laser.
Claim 21
Dependent Claim
28 words
The modulator as claimed in claim 13 further comprising: a resonant circuit coupled to said modulator, said resonant circuit being selectively detuned when said photoactive area is illuminated.
Claim 22
Dependent Claim
28 words
The modulator as claimed in claim 19 wherein said resonant circuit is an impedance matching circuit for varying the reactance of said modulator when said source is modulated.
Claim 23
Dependent Claim
25 words
The modulator as claimed in claim 20 wherein said impedance matching circuit transforms said reactance of modulator to a system impedance of nominally fifty ohms.
Claim 24
Dependent Claim
21 words
The modulator as claimed in claim 13 further comprising: a circulator for providing separate input and output ports to said modulator.
Claim 25
Dependent Claim
21 words
The modulator as claimed in claim 13 further comprising: a resonating inductance coupled to said modulator to define a two-port modulator.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |