Patent US5047361A successfully refreshed from Google Patents.
US5047361A
Expired / Lapsed
US
⏱️ 0.0 years remaining
NMOS transistor having inversion layer source/drain contacts
Assignee: Texas Instruments Inc
•
Filing: 1990-07-06
•
Granted: 1991-09-10
•
Expires: 2010-07-06
Abstract
Abstract A transistor (42) is provided having a gate conductor (44) formed adjacent a semiconductor substrate (46) and separated therefrom by a gate insulator (48). Sidewall spacers (52, 54) are formed at the sides of gate conductor (44) and adjacent semiconductor substrate (46). Diffused regions (56, 58) are formed within semiconductor substrate (46) in order to provide source/drain regions for transistor (42). Positive charges from radiation are trapped within sidewall spacers (52, 54) thereby attracting negative charges from semiconductor substrate (46) such that a negative charge layer is created between diffused region (56) and gate edge (50a) and also between diffused region (58) and gate edge (50b).
Inventors
- 👤 Mishel Matloubian
- 👤 Cheng-Eng D. Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:36
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/60; H10D64/00; H10D64/60; H10D64/66; H10D64/68; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
84 words
A method of forming a transistor comprising: forming a gate conductor adjacent a semiconductor substrate defining first and second gate edges within the semiconductor substrate; forming a sidewall spacer adjacent the side of the gate conductor and the surface of the semiconductor substrate; and forming positive charges which are trapped within the sidewall spacer such that a negative charge layer is formed opposite the sidewall spacer, said step of forming positive charges trapped within the sidewall spacer comprising exposing the sidewall spacer to radiation.
Claim 2
Independent Claim
84 words
A method of forming a transistor comprising: forming a gate conductor adjacent a semiconductor substrate defining first and second gate edges within the semiconductor substrate; forming a sidewall spacer adjacent the side of the gate conductor and the surface of the semiconductor substrate; and forming positive charges which are trapped within the sidewall spacer such that a negative charge layer is formed opposite the sidewall spacer, said step of forming positive charges trapped within the sidewall spacer comprising exposing the sidewall spacer to radiation.
Claim 3
Dependent Claim
20 words
The method of claim 1 and further comprising forming a gate insulator between the semiconductor substrate and the gate conductor.
Claim 4
Dependent Claim
43 words
The method of claim 1 and further comprising forming a diffused region within the semiconductor substrate and away from the first gate edge such that the negative charge layer will provide an electrical connection from the diffused region to the first gate edge.
Claim 5
Dependent Claim
19 words
The method of claim 3 wherein said step of forming the diffused region comprises forming N type semiconductor material.
Claim 6
Dependent Claim
138 words
The method of claim 3 wherein the diffused region comprises a first diffused region, the gate conductor has first and second sides, the negative charge layer comprises a first negative charge layer and the sidewall spacer comprises a first sidewall spacer adjacent the first side of the gate conductor, and further comprising: forming a second sidewall spacer adjacent the second side of the gate conductor and the surface of the semiconductor substrate; forming positive charges trapped within the second sidewall spacer such that a second negative charge layer is formed within the semiconductor substrate and opposite the second sidewall spacer; and forming a second diffused region within the semiconductor substrate and away from the second gate edge such that the second negative charge layer provides an electrical connection from the second diffused region to the second gate edge.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein said step of forming the sidewall spacer comprises forming an oxide sidewall spacer.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein said step of forming the semiconductor substrate comprises forming P type semiconductor material.
Claim 9
Dependent Claim
20 words
The method of claim 1 wherein said step of exposing to radiation comprises exposing the sidewall spacer to gamma radiation.
Claim 10
Dependent Claim
20 words
The method of claim 1 wherein said step of exposing to radiation comprises exposing the sidewall spacer to X-ray radiation.
Claim 11
Dependent Claim
25 words
The method of claim 1 wherein said step of exposing to radiation comprises exposing the sidewall spacer to radiation of approximately 10 to 100 kRad(Si).
Claim 12
Dependent Claim
42 words
The method of claim 1 and further comprising forming first and second diffused regions within the semiconductor substrate and contacting the first and second gate edges, respectively, wherein the negative charge layer is formed primarily within the first and second diffused regions.
Claim 13
Independent Claim
122 words
A method of forming a transistor, comprising: forming a gate conductor adjacent a semiconductor substrate defining first and second gate edges outwardly from the gate conductor and within the semiconductor substrate; forming a first sidewall spacer adjacent a first side of the gate conductor and the surface of the semiconductor substrate; forming a second sidewall spacer adjacent a second side of the gate conductor and the surface of the semiconductor substrate; and trapping positive charges within the first and second sidewall spacers such that first and second negative charge layers are formed within the semiconductor substrate opposite the first and second sidewall spacers, respectively, said step of forming positive charges trapped within the sidewall spacer comprising exposing the sidewall spacer to radiation.
Claim 14
Independent Claim
122 words
A method of forming a transistor, comprising: forming a gate conductor adjacent a semiconductor substrate defining first and second gate edges outwardly from the gate conductor and within the semiconductor substrate; forming a first sidewall spacer adjacent a first side of the gate conductor and the surface of the semiconductor substrate; forming a second sidewall spacer adjacent a second side of the gate conductor and the surface of the semiconductor substrate; and trapping positive charges within the first and second sidewall spacers such that first and second negative charge layers are formed within the semiconductor substrate opposite the first and second sidewall spacers, respectively, said step of forming positive charges trapped within the sidewall spacer comprising exposing the sidewall spacer to radiation.
Claim 15
Dependent Claim
20 words
The method of claim 12 and further comprising forming a gate insulator between the semiconductor substrate and the gate conductor.
Claim 16
Dependent Claim
83 words
The method of claim 12 and further comprising: forming a first diffused region within the semiconductor substrate and away from the first gate edge such that the first negative charge layer will provide an electrical connection from the diffused region to the first gate edge; and forming a second diffused region within the semiconductor substrate and away from the second gate edge such that the second negative charge layer will provide an electrical connection from the diffused region to the second gate edge.
Claim 17
Dependent Claim
22 words
The method of claim 12 wherein said step of forming the first and second diffused regions comprises forming N type semiconductor material.
Claim 18
Dependent Claim
21 words
The method of claim 12 wherein said step of forming the first and second sidewall spacers comprises forming oxide sidewall spacers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-09 | 1995-03-11 | 1995-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-09 | 1999-03-11 | 1999-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-09 | 2003-03-11 | 2003-09-10 | $7700.00 | Window Closed / Lapsed |