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US5045355A
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Carbon chalcogenide macromolecular composition and process for preparation thereof
Assignee: Lockheed Martin Corp
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Filing: 1990-06-28
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Granted: 1991-09-03
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Expires: 2010-06-28
Abstract
Abstract A carbon chalcogenide macromolecular composition prepared from carbon dichalcogenide and to a process for the preparation thereof. A carbon dichalcogenide, for example, carbon disulfide, in entrained in an inert gas, and the mixture formed therefrom is passed over a hot tungsten filament wherein carbon disulfide is degraded into fragments. The fragments are then deposited onto a surface of a nonreactive substrate. The deposited fragments recombine to form the macromolecular composition. A significant characteristic of the composition is its threshold voltage above which its electrical resistance drops precipitously. This characteristic also exhibits a unique temperature dependence. Dopants may be added to the composition to reduce the electrical resistance.
Inventors
- 👤 Clifford L. Spiro
- 👤 William F. Banholzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:45
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
55 words
A process for preparing a carbon chalcogenide macromolecular layer on a substrate comprising: (a) vaporising a carbon dichalcogenide; (b) energizing the carbon dichalcogenide vapor to degrade into fragments; (c) depositing the fragments onto a surface of a thermally stable substrate; and (d) recombining the fragments on the substrate thereby forming the carbon chalcogenide macromolecular composition.
Claim 2
Dependent Claim
55 words
A process for preparing a carbon chalcogenide macromolecular layer on a substrate comprising: (a) vaporising a carbon dichalcogenide; (b) energizing the carbon dichalcogenide vapor to degrade into fragments; (c) depositing the fragments onto a surface of a thermally stable substrate; and (d) recombining the fragments on the substrate thereby forming the carbon chalcogenide macromolecular composition.
Claim 3
Dependent Claim
31 words
The process according to claim 1, wherein the carbon dichalcogenide is energized by passing the mixture over a non-reactive filament sufficiently heated to thermally degrade the carbon dichalcogenide into the fragments.
Claim 4
Dependent Claim
17 words
The process according to claim 2, wherein the carbon dichalcogenide is thermally degraded at about 200°-4000° C.
Claim 5
Dependent Claim
14 words
The process according to claim 2, wherein the non-reactive filament is made of tungsten.
Claim 6
Dependent Claim
15 words
The process according to claim 2, wherein the filament is heated to about 200°-4000° C.
Claim 7
Dependent Claim
20 words
The process according to claim 1, wherein the substrate is metal, metal alloy, ceramic, metal salts, silicon, sapphire or polymers.
Claim 8
Dependent Claim
19 words
The process according to claim 1, wherein the surface temperature of the substrate is maintained at about 20°-1000° C.
Claim 9
Dependent Claim
46 words
The process according to claim 1, wherein the carbon dichalcogenide is energized by exposing it to a microwave radiation of sufficient intensity; to a light emission of sufficient frequency; or to a thermal radiation of sufficient temperature, whereby the carbon dichalcogenide is degraded into the fragments.
Claim 10
Dependent Claim
18 words
The process according to claim 1, wherein the carbon dichalcogenide is carbon disulfide, carbon diselenide or carbon ditelluride.
Claim 11
Dependent Claim
21 words
The process according to claim 1 further comprising entraining the carbon dichalcogenide vapor in an inert gas to form a mixture.
Claim 12
Dependent Claim
16 words
The process according to claim 10, wherein the inert gas is argon, helium, nitrogen or xenon.
Claim 13
Dependent Claim
82 words
A process for preparing a carbon sulfide macromolecular layer on a substrate from carbon disulfide comprising: (a) entraining a carbon disulfide in an argon gas to form a mixture; (b) passing the mixture over a tungsten filament heated to about 1500°-2500° C.; (c) thermally degrading the carbon disulfide entrained in the mixture into fragments; (d) depositing the fragments onto a target substrate maintained at about 200° to 500° C.; and (e) recombining the fragments on the substrate thereby forming the macromolecular composition.
Claim 14
Dependent Claim
82 words
A process for preparing a carbon sulfide macromolecular layer on a substrate from carbon disulfide comprising: (a) entraining a carbon disulfide in an argon gas to form a mixture; (b) passing the mixture over a tungsten filament heated to about 1500°-2500° C.; (c) thermally degrading the carbon disulfide entrained in the mixture into fragments; (d) depositing the fragments onto a target substrate maintained at about 200° to 500° C.; and (e) recombining the fragments on the substrate thereby forming the macromolecular composition.
Claim 15
Dependent Claim
12 words
The process according to claim 12, wherein the target substrate is silicon.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-09-02 | 1995-03-04 | 1995-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-02 | 1999-03-04 | 1999-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-02 | 2003-03-04 | 2003-09-03 | $7700.00 | Window Closed / Lapsed |