Method for checking lithography critical dimensions

Claim 1

A method for measuring the proper exposure of a desired circuit feature on an integrated circuit wafer, wherein the method of making the integrated circuit feature comprises forming a layer of photoresist on a surface, creating a mask pattern of the desired circuit feature, transferring the mask pattern to the photoresist layer, exposing the photoresist layer using photochemical means and transferring the pattern to the underlying surface, the method comprising: including a structure in the mask pattern, apart from the desired circuit feature, wherein the structure comprises a plurality of identical geometric patterns arranged in a progressively overlapping edge-to-edge orientation on the mask pattern, the progressive overlap being such that at one end of the structure, there is a substantial separation between the opposing edges of the geometric patterns, in the middle of the structure the opposing edges of the geometric patterns meet, and at the other end of the structure there is a substantial overlap of the opposing edges of the geometric patterns; and analyzing the degree of exposure of the structure on the photoresist layer, wherein the proper degree of exposure is obtained when the opposing edges of the geometric pattern meet in the middle of the structure, and wherein an underexposed or overexposed condition exists when the point at which the opposing edges meet has shifted from the middle of the structure.

Claim 2

A method for measuring the proper exposure of a desired circuit feature on an integrated circuit wafer, wherein the method of making the integrated circuit feature comprises forming a layer of photoresist on a surface, creating a mask pattern of the desired circuit feature, transferring the mask pattern to the photoresist layer, exposing the photoresist layer using photochemical means and transferring the pattern to the underlying surface, the method comprising: including a structure in the mask pattern, apart from the desired circuit feature, wherein the structure comprises a plurality of identical geometric patterns arranged in a progressively overlapping edge-to-edge orientation on the mask pattern, the progressive overlap being such that at one end of the structure, there is a substantial separation between the opposing edges of the geometric patterns, in the middle of the structure the opposing edges of the geometric patterns meet, and at the other end of the structure there is a substantial overlap of the opposing edges of the geometric patterns; and analyzing the degree of exposure of the structure on the photoresist layer, wherein the proper degree of exposure is obtained when the opposing edges of the geometric pattern meet in the middle of the structure, and wherein an underexposed or overexposed condition exists when the point at which the opposing edges meet has shifted from the middle of the structure.

Claim 7

A method for obtaining proper registration of a plurality of layers of desired circuit features on an exposed integrated circuit wafer, wherein the process of making the integrated circuit features comprises forming a layer of photoresist on a surface, creating a mask pattern of the desired circuit feature, transferring the mask pattern to the photoresist layer, exposing the photoresist layer using photochemical means, transferring the pattern to the underlying surface, and repeating the process for subsequent layers until the desired features have been transferred to the underlying surface, the method comprising: including a structure in the mask pattern for each layer, apart from the desired circuit feature and parallel with and abutting the previous layer structure, wherein the structure comprises a plurality of geometric patterns arranged in a progressively overlapping edge-to-edge orientation on the mask pattern, the progressive overlap being such that at one end of the structure there is a substantial separation between the opposing edges of the geometric patterns, in the middle of the structure the opposing edges of the geometric patterns meet, and at the other end of the structure there is a substantial overlap of the opposing edges of the geometric patterns, and wherein the non-opposing edges of the geometric patterns are offset relative to a reference pattern in the middle of the structure; analyzing the degree of exposure of the structure on the layer, wherein the proper degree of exposure is obtained when the opposing edges of each geometric pattern exactly touch in the middle of the structure, and wherein an underexposed or overexposed condition exists when the point at which the opposing edges meet has shifted from the middle of the structure; analyzing the registration of succeeding layers of features, wherein proper registration is obtained when the abutting non-opposing edges of the exposed parallel structures of each layer meet at the reference pattern, and wherein the nature and degree of off-registration condition may be determined by reference to which abutting, parallel geometric patterns have their offset, non-opposing edges meeting.

Claim 8

A method for obtaining proper registration of a plurality of layers of desired circuit features on an exposed integrated circuit wafer, wherein the process of making the integrated circuit features comprises forming a layer of photoresist on a surface, creating a mask pattern of the desired circuit feature, transferring the mask pattern to the photoresist layer, exposing the photoresist layer using photochemical means, transferring the pattern to the underlying surface, and repeating the process for subsequent layers until the desired features have been transferred to the underlying surface, the method comprising: including a structure in the mask pattern for each layer, apart from the desired circuit feature and parallel with and abutting the previous layer structure, wherein the structure comprises a plurality of geometric patterns arranged in a progressively overlapping edge-to-edge orientation on the mask pattern, the progressive overlap being such that at one end of the structure there is a substantial separation between the opposing edges of the geometric patterns, in the middle of the structure the opposing edges of the geometric patterns meet, and at the other end of the structure there is a substantial overlap of the opposing edges of the geometric patterns, and wherein the non-opposing edges of the geometric patterns are offset relative to a reference pattern in the middle of the structure; analyzing the degree of exposure of the structure on the layer, wherein the proper degree of exposure is obtained when the opposing edges of each geometric pattern exactly touch in the middle of the structure, and wherein an underexposed or overexposed condition exists when the point at which the opposing edges meet has shifted from the middle of the structure; analyzing the registration of succeeding layers of features, wherein proper registration is obtained when the abutting non-opposing edges of the exposed parallel structures of each layer meet at the reference pattern, and wherein the nature and degree of off-registration condition may be determined by reference to which abutting, parallel geometric patterns have their offset, non-opposing edges meeting.