US5043946A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device
Assignee: Sharp Corp
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Filing: 1990-03-07
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Granted: 1991-08-27
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Expires: 2010-03-07
Abstract
Abstract A semiconductor memory device comprising a DRAM, an EEPROM, a mode switch for selecting either mode of the DRAM mode and the EEPROM mode, and a transfer circuit for transferring data stored in the DRAM to the EEPROM and vice versa. The DRAM consists of one transistor and one capacitor, and one of the terminals of the capacitor is electrically isolated.
Inventors
- 👤 Yoshimitsu Yamauchi
- 👤 Kenichi Tanaka
- 👤 Keizo Sakiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:02
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/005; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; G11C14/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
127 words
In a semiconductor memory device comprising: a volatile memory means; a non-volatile memory means; a mode switch means for selecting either mode of a volatile memory mode in which said memory device functions as a volatile memory device and a non-volatile memory mode in which said memory device functions as a non-volatile memory device; and a transfer means for transferring data between said volatile memory means and said non-volatile memory means in accordance with the mode selected by said switch means, the improvement existing in that said memory device further comprises a photoelectric conversion means for converting an optical signal applied thereon into an electric signal, said photoelectric conversion means being connected to said volatile memory means, said electric signal being stored in said volatile memory means.
Claim 2
Dependent Claim
127 words
In a semiconductor memory device comprising: a volatile memory means; a non-volatile memory means; a mode switch means for selecting either mode of a volatile memory mode in which said memory device functions as a volatile memory device and a non-volatile memory mode in which said memory device functions as a non-volatile memory device; and a transfer means for transferring data between said volatile memory means and said non-volatile memory means in accordance with the mode selected by said switch means, the improvement existing in that said memory device further comprises a photoelectric conversion means for converting an optical signal applied thereon into an electric signal, said photoelectric conversion means being connected to said volatile memory means, said electric signal being stored in said volatile memory means.
References Cited (Backward Citations)
US4615020A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-26 | 1995-02-25 | 1995-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-26 | 1999-02-25 | 1999-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-26 | 2003-02-25 | 2003-08-27 | $7700.00 | Window Closed / Lapsed |