Patent US5041897A successfully refreshed from Google Patents.
US5041897A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: SEIKOSHA Co Ltd A CORP OF JAPAN
•
Filing: 1990-10-17
•
Granted: 1991-08-20
•
Expires: 2010-10-17
Abstract
Abstract A semiconductor device has a fuse element formed on an insulating substrate, and a first insulating layer formed on the substrate and covering the fuse element. Further insulation on the first insulating layer nitride has an opening exposing the region of the first insulating layer above said fuse.
Inventors
- 👤 Koji Machida
- 👤 Hideyuki Nakamura
- 👤 Hiroshi Tonegi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:58
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
77 words
In a semiconductor device comprising a thin film fuse on a first insulating layer, a second insulating layer on said first insulating layer and covering said thin film fuse, and a further insulating layer on said second insulating layer, the improvement wherein said further insulating layer has a hole extending therethrough above said fuse and of the shape of said fuse, thereby exposing said second insulating layer above said fuse, said second insulating layer being silicon nitride.
Claim 2
Dependent Claim
77 words
In a semiconductor device comprising a thin film fuse on a first insulating layer, a second insulating layer on said first insulating layer and covering said thin film fuse, and a further insulating layer on said second insulating layer, the improvement wherein said further insulating layer has a hole extending therethrough above said fuse and of the shape of said fuse, thereby exposing said second insulating layer above said fuse, said second insulating layer being silicon nitride.
Claim 3
Dependent Claim
107 words
In a semiconductor device comprising a thin film fuse on a first insulating layer, a second insulating layer on said first insulating layer and covering said thin film fuse, and a further insulating layer on said second insulating layer, the improvement wherein said further insulating layer has a hole extending therethrough above said fuse and of the shape of said fuse, thereby exposing said second insulating layer above said fuse, said further insulating layer being comprised of third and fourth insulating layers, said third insulating layer being a silicon oxide layer on said second insulating layer, and said fourth insulating layer being a doped silicon oxide layer.
Claim 4
Dependent Claim
107 words
In a semiconductor device comprising a thin film fuse on a first insulating layer, a second insulating layer on said first insulating layer and covering said thin film fuse, and a further insulating layer on said second insulating layer, the improvement wherein said further insulating layer has a hole extending therethrough above said fuse and of the shape of said fuse, thereby exposing said second insulating layer above said fuse, said further insulating layer being comprised of third and fourth insulating layers, said third insulating layer being a silicon oxide layer on said second insulating layer, and said fourth insulating layer being a doped silicon oxide layer.
References Cited (Backward Citations)
US4428066A
Cited
US4536949A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |