US5041796A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wideband amplifier using FET
Assignee: Panasonic Holdings Corp
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Filing: 1990-03-26
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Granted: 1991-08-20
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Expires: 2010-03-26
Abstract
Abstract The amplifier employs an FET having a flat characteristic of mutual conductance versus the potential gap between the gate and the source of the FET. By employing this FET, the amplifier achieves a sufficiently flat gain characteristic in which the gain deviation is very small throughout the range of the objective frequencies.
Inventors
- 👤 Shutaro Nambu
- 👤 Yasuhisa Yamashita
- 👤 Kazuhide Goda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:20
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/32; H03F1/3205; H03F3/00; H03F3/189; H03F3/19; H03F3/193; H03F3/1935
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
72 words
A wideband amplifier concurrently receiving multi-channel signals in a predetermined frequency range and amplifying the received signals, said wideband amplifier comprising a field-effect transistor for amplifying the received signals, said field effect transistor having a substantially flat characteristic of mutual conductance versus a voltage between a gate and a source with respect to the center of an operation point for suppressing a second order intermodulation distortion of an output of said amplifier.
Claim 2
Dependent Claim
72 words
A wideband amplifier concurrently receiving multi-channel signals in a predetermined frequency range and amplifying the received signals, said wideband amplifier comprising a field-effect transistor for amplifying the received signals, said field effect transistor having a substantially flat characteristic of mutual conductance versus a voltage between a gate and a source with respect to the center of an operation point for suppressing a second order intermodulation distortion of an output of said amplifier.
Claim 3
Dependent Claim
75 words
A wideband amplifier concurrently receiving multi-channel signals in a predetermined frequency range and amplifying the received signals, said wideband amplifier comprising a GaAs field effect transistor for amplifying the received signals, said GaAs field effect transistor having a substantially flat characteristic of mutual conductance versus a voltage between a gate and a source with respect to the center of an operation point for suppressing a second order intermodulation distortion of an output of said amplifier.
Claim 4
Dependent Claim
75 words
A wideband amplifier concurrently receiving multi-channel signals in a predetermined frequency range and amplifying the received signals, said wideband amplifier comprising a GaAs field effect transistor for amplifying the received signals, said GaAs field effect transistor having a substantially flat characteristic of mutual conductance versus a voltage between a gate and a source with respect to the center of an operation point for suppressing a second order intermodulation distortion of an output of said amplifier.
Claim 5
Dependent Claim
95 words
A wideband amplifier concurrently receiving multi-channel signals in a predetermined frequency range and amplifying the received signals, said wideband amplifier comprising a field effect transistor for amplifying the received signals, said field effect transistor having a substantially flat characteristic of mutual conductance versus a voltage between a gate and a source with respect to the center of an operation point for suppressing a second order intermodulation distortion of an output of said amplifier, and wherein said field effect transistor has an active layer formed by controlling the condition of ion implantation to a semiconductor substrate.
Claim 6
Dependent Claim
95 words
A wideband amplifier concurrently receiving multi-channel signals in a predetermined frequency range and amplifying the received signals, said wideband amplifier comprising a field effect transistor for amplifying the received signals, said field effect transistor having a substantially flat characteristic of mutual conductance versus a voltage between a gate and a source with respect to the center of an operation point for suppressing a second order intermodulation distortion of an output of said amplifier, and wherein said field effect transistor has an active layer formed by controlling the condition of ion implantation to a semiconductor substrate.
Claim 7
Dependent Claim
49 words
A wideband amplifier as in claim 1, wherein a variation of mutual conductance of said field-effect transistor is less than a predetermined value when a voltage applied between a gate and a source terminal of the field-effect transistor is varied by a predetermined value from a selected voltage level.
Claim 8
Dependent Claim
49 words
A wideband amplifier as in claim 2, wherein a variation of mutual conductance of said field-effect transistor is less than a predetermined value when a voltage applied between a gate and a source terminal of the field-effect transistor is varied by a predetermined value from a selected voltage level.
Claim 9
Dependent Claim
49 words
A wideband amplifier as in claim 3, wherein a variation of mutual conductance of said field-effect transistor is less than a predetermined value when a voltage applied between a gate and a source terminal of the field-effect transistor is varied by a predetermined value from a selected voltage level.
References Cited (Backward Citations)
JPS6085610A
Cited
US4853649A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |