US5041186A
Expired / Lapsed
US
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Method for manufacturing compound semiconductor single crystals using a hydrogen monitor gas
Assignee: Toshiba Corp
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Filing: 1988-11-30
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Granted: 1991-08-20
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Expires: 2008-11-30
Abstract
Abstract Disclosed is a method of manufacturing a compound semiconductor single crystal, wherein a container containing a raw melt is placed in an atmosphere containing at least one monitor gas selected from the group consisting of hydrogen, oxygen, carbon monoxide, and carbon dioxide, a concentration of the monitor gas in the atmosphere is detected, and the detected concentration of the monitor gas is controlled to be a preset value. A compound semiconductor single crystal having a uniform carrier concentration can be obtained by controlling the concentration of the monitor gas.
Inventors
- 👤 Johji Nishio
- 👤 Takashi Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:36
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B15/00; C30B15/20; C30B29/42; Y; Y10; Y10S; Y10S117/00; Y10S117/906
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
57 words
A method of manufacturing a compound semiconductor single crystal, comprising the steps of: placing a container containing a raw melt of a compound semiconductor in an atmosphere containing a monitor gas consisting of hydrogen; detecting the concentration of said monitor gas in the atmosphere; and controlling the detected concentration of the monitor gas to a preset value.
Claim 2
Independent Claim
57 words
A method of manufacturing a compound semiconductor single crystal, comprising the steps of: placing a container containing a raw melt of a compound semiconductor in an atmosphere containing a monitor gas consisting of hydrogen; detecting the concentration of said monitor gas in the atmosphere; and controlling the detected concentration of the monitor gas to a preset value.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein said monitor gas is supplied to and exhausted from the atmosphere together with a dilution gas.
Claim 4
Dependent Claim
42 words
A method according to claim 2, wherein the concentration of said monitor gas is controlled by controlling supply of said monitor gas and said dilution gas to the atmosphere, and exhaust of said monitor gas and said dilution gas from the atmosphere.
Claim 5
Dependent Claim
31 words
A method according to claim 1, wherein the preset value to which the concentration of said monitor gas is controlled is set according to the pull weight of said single crystal.
Claim 6
Dependent Claim
26 words
A method according to claim 1, wherein the preset value to which the concentration of said monitor gas is controlled is set to a constant value.
Claim 7
Dependent Claim
20 words
A method according to claim 1, wherein said compound semiconductor single crystal comprises a group III-V compound semiconductor single crystal.
Claim 8
Dependent Claim
25 words
A method according to claim 6, wherein said group III-V compound semiconductor comprises a compound selected from the group consisting of GaAs, GaP, and InP.
Claim 9
Dependent Claim
31 words
A method according to claim 1, wherein said raw melt comprises a GaAs raw melt containing an n-type impurity, and said compound semiconductor single crystal comprises an n-type GaAs single crystal.
Claim 10
Dependent Claim
12 words
A method according to claim 8, wherein said n-type impurity comprises silicon.
Claim 11
Dependent Claim
31 words
A method according to claim 1, wherein said raw melt comprises a GaAs raw melt containing a p-type impurity, and said compound semiconductor single crystal comprises a p-type GaAs single crystal.
Claim 12
Dependent Claim
12 words
A method according to claim 10, wherein said p-type impurity comprises carbon.
Claim 13
Independent Claim
54 words
A method of manufacturing a compound semiconductor single crystal, comprising the steps of: placing a container containing a raw melt of a compound semiconductor in an atmosphere consisting of hydrogen gas; detecting the concentration of said hydrogen gas in the atmosphere; and controlling the detected concentration of the hydrogen gas to a preset value.
Claim 14
Independent Claim
54 words
A method of manufacturing a compound semiconductor single crystal, comprising the steps of: placing a container containing a raw melt of a compound semiconductor in an atmosphere consisting of hydrogen gas; detecting the concentration of said hydrogen gas in the atmosphere; and controlling the detected concentration of the hydrogen gas to a preset value.
Claim 15
Dependent Claim
31 words
A method according to claim 12, wherein said raw melt comprises a GaAs raw melt containing an n-type impurity, and said compound semiconductor single crystal comprises an n-type GaAs single crystal.
Claim 16
Dependent Claim
12 words
A method according to claim 13, wherein said n-type impurity comprises silicon.
Claim 17
Independent Claim
69 words
A method of manufacturing a compound semiconductor single crystal, comprising the steps of: placing a container containing a raw melt of a compound semiconductor in an atmosphere containing a monitor gas consisting of hydrogen; detecting the concentration of said monitor gas int he atmosphere; and controlling the detected concentration of the monitor gas to a preset value which is a function of the pull weight of said single crystal.
Claim 18
Independent Claim
69 words
A method of manufacturing a compound semiconductor single crystal, comprising the steps of: placing a container containing a raw melt of a compound semiconductor in an atmosphere containing a monitor gas consisting of hydrogen; detecting the concentration of said monitor gas int he atmosphere; and controlling the detected concentration of the monitor gas to a preset value which is a function of the pull weight of said single crystal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |