Production of compound semiconductor single crystal

Abstract

Abstract PURPOSE:To make cleaning after crystal growth easy and to improve safety of operator, by preparing single crystal, introducing an active gas to a pressure container, reacting the gas with extraneous matter to gasify the matter and exhausting out of the container. CONSTITUTION:A crucible 9 charged with compound semiconductor melt 13 is stored in a pressure container 11. Seed crystal 14 is brought into contact with the melt 13 and single crystal 15 is grown following the seed crystal 14. Then an active gas 16 containing 0.1-30% H2 in an inert gas is fed to the container 11. Elements having high vapor pressure in the container 11 are combined with the gas in a gas state and discharged out of the container 11.

Inventors

• 👤 Katsuyoshi Fukuda
• 👤 福田　勝義
• 👤 Toru Katsumata
• 👤 徹 勝亦
• 👤 Joshi Nishio
• 👤 譲司 西尾

Bibliographic Details