US5040048A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal interconnection layer having reduced hillock formation
Assignee: Mitsubishi Electric Corp
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Filing: 1989-07-17
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Granted: 1991-08-13
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Expires: 2009-07-17
Abstract
Abstract A semiconductor device having multilayer interconnections with reduced formation of hillocks is provided. An Al wiring layer formed on a substrate is patterned for Al wirings. Impurity ions such as Al, Ar, As, P and Sb or the like are implanted on the entire surface including sidewalls of the provided Al wirings. Such impurity ions are implanted to entire surface including sidewalls of the Al wirings, the grain size of granular material at sidewalls of the Al wirings can be made smaller than that of the granular material at inner portions of the metal wirings. As the grain size is reduced, the size of the generated hillocks is reduced. Consequently, short circuits between Al wirings in the same layer can be prevented, enabling provision of highly reliable and highly integrated semiconductor devices.
Inventors
- 👤 Takao Yasue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:12
CPC Classifications
H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
84 words
A semiconductor device, comprising: a semiconductor substrate having at least one element formed thereon; and at least one conducting strip on said substrate connected to at least one said element; said at least one conducting strip being made of a granular metallic material; wherein a grain size of the granular material in a sidewall portion of said at least one conducting strip is less than that of the granular material in the inner portion of said strip whereby no lateral hillocks are formed thereon.
Claim 2
Dependent Claim
84 words
A semiconductor device, comprising: a semiconductor substrate having at least one element formed thereon; and at least one conducting strip on said substrate connected to at least one said element; said at least one conducting strip being made of a granular metallic material; wherein a grain size of the granular material in a sidewall portion of said at least one conducting strip is less than that of the granular material in the inner portion of said strip whereby no lateral hillocks are formed thereon.
Claim 3
Dependent Claim
100 words
A semiconductor device, comprising: a semiconductor substrate having at least one element formed thereon; and at least one conducting strip on said substrate connected to at least one said element; said at least one conducting strip being made of a granular metallic material and having an inner portion and a peripheral portion surrounding said inner portion; wherein a grain size of the granular material in the peripheral portion of said at least one conducting strip is less than that of the granular material in the inner portion of said strip whereby no upper surface or lateral hillocks are formed thereon.
Claim 4
Dependent Claim
100 words
A semiconductor device, comprising: a semiconductor substrate having at least one element formed thereon; and at least one conducting strip on said substrate connected to at least one said element; said at least one conducting strip being made of a granular metallic material and having an inner portion and a peripheral portion surrounding said inner portion; wherein a grain size of the granular material in the peripheral portion of said at least one conducting strip is less than that of the granular material in the inner portion of said strip whereby no upper surface or lateral hillocks are formed thereon.
Claim 5
Dependent Claim
94 words
A semiconductor device, comprising: a semiconductor substrate having at least one element formed thereon; and at least one conducting strip on said substrate connected to at least one said element; said at least one conducting strip being made of a granular metallic material and having an inner portion and a sidewall portion on opposite sides of said inner portion; wherein a grain size of the granular material in at least the sidewall portion of said at least one conducting strip is less than approximately one micrometer whereby no significant lateral hillocks are formed thereon.
Claim 6
Dependent Claim
94 words
A semiconductor device, comprising: a semiconductor substrate having at least one element formed thereon; and at least one conducting strip on said substrate connected to at least one said element; said at least one conducting strip being made of a granular metallic material and having an inner portion and a sidewall portion on opposite sides of said inner portion; wherein a grain size of the granular material in at least the sidewall portion of said at least one conducting strip is less than approximately one micrometer whereby no significant lateral hillocks are formed thereon.
References Cited (Backward Citations)
JPS55158649A
Cited
JPS57183056A
Cited
JPS57183055A
Cited
JPS57183054A
Cited
JPS57183053A
Cited
JPS62291147A
Cited
US4942138A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-12 | 1995-02-11 | 1995-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-12 | 1999-02-11 | 1999-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-12 | 2003-02-11 | 2003-08-13 | $7700.00 | Window Closed / Lapsed |