US4942138A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion-implantation of wiring electrodes of a semiconductor device for hillock reduction
Assignee: Sharp Corp
•
Filing: 1988-12-23
•
Granted: 1990-07-17
•
Expires: 2008-12-23
Abstract
Abstract An ion-implantation method for wiring electrodes of a semiconductor device comprises irradiating the wiring electrodes with ion beams from at least two directions to prevent occurrence of hillocks.
Inventors
- 👤 Kazumi Miki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:42
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/961
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
52 words
An ion-implantation method for suppressing the formation of hillocks in wiring electrodes of a semiconductor device comprising irradiating said wiring electrodes with ion beams containing argon ions or arsenic ions from at least two directions which are inclined with respect to the direction normal to the top surface of said wiring electrodes.
Claim 2
Dependent Claim
52 words
An ion-implantation method for suppressing the formation of hillocks in wiring electrodes of a semiconductor device comprising irradiating said wiring electrodes with ion beams containing argon ions or arsenic ions from at least two directions which are inclined with respect to the direction normal to the top surface of said wiring electrodes.
Claim 3
Dependent Claim
34 words
An ion-implantation method according to claim 1, wherein the angle of incidence of said ion beams is fixed at a certain angle to the direction normal to the top surface of said wiring electrodes.
Claim 4
Dependent Claim
24 words
An ion-implantation method according to claim 1, wherein the angle of incidence of said ion beams is changed in a stepwise or continuous fashion.
References Cited (Backward Citations)
US4410622A
Cited
JPS5742149A
Cited
JPS57130450A
Cited
JPS57130451A
Cited
JPS594058A
Cited
US4704367A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-16 | 1994-01-15 | 1994-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-16 | 1998-01-15 | 1998-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-16 | 2002-01-15 | 2002-07-17 | $7700.00 | Window Closed / Lapsed |