Stabilization of wiring metal film

Abstract

Abstract PURPOSE:To prevent generation of electro-migration by executing ion implantation of O2 or/and N2 to the entire part or a part of the front surface or rear surface of wiring alloy metal film. CONSTITUTION:An aluminum wiring film 3 in the thickness of 0.2mum is formed on an SiO2 film 2 and the O2 ion is implanted thereto with an energy of 20keV and dose of 5X10<16>cm<-2>, the aluminum surface 12 is converted to AlOx and the surface is hardened, preventing electro-migration. In this case, N2 ion or mixture of N2 and O2 may be implanted and thereby AlNx or AlOxNx may be formed. Moreover, it is also effective to form such layer at the side surface 14 and lower surface 15, in addition to the surface 12. Thereby, a thin wiring metal film can be formed as the multi-layer structure and an integration density can be improved by preventing electro-migration.

Inventors

• 👤 Yuji Furumura
• 👤 雄二 古村
• 👤 Mamoru Maeda
• 👤 守 前田
• 👤 Mikio Takagi
• 👤 幹夫 高木

Bibliographic Details