Microwave elements with impedance control circuits

Claim 2

A microwave element comprising: field effect transistor having source, drain, and gate terminals; a series-connected diode and capacitor connected between the source and drain terminals; and means for applying a variable bias voltage to said diode to vary the capacitance of the diode for controlling the capacitance between said source and said drain of said transistor when the transistor is off.

Claim 3

A microwave switch comprising: first and second series-connected field effect transistors, each including a source terminal, a drain terminal, and a gate terminal, a source terminal and a drain terminal of the first and second transistors being connected together; first and second impedance control circuits, each circuit comprising a series-connected diode and capacitor, the first and second circuits being respectively connected between the source and drain terminals of the first and second transistors; means for applying variable bias voltages to each of said diodes to vary the capacitance of each of said diodes and the capacitance between the source and drain terminals of the respective transistors; an input terminal connected to the connection between said first and second transistors; and first and second output terminals at the respective drain and source terminals of said first and second transistors that are not connected together.

Claim 4

A microwave switch comprising: first and second series-connected field effect transistors, each including a source terminal, a drain terminal, and a gate terminal, a source terminal and a drain terminal of the first and second transistors being connected together; first and second impedance control circuits, each circuit comprising a series-connected diode and capacitor, the first and second circuits being respectively connected between the source and drain terminals of the first and second transistors; means for applying variable bias voltages to each of said diodes to vary the capacitance of each of said diodes and the capacitance between the source and drain terminals of the respective transistors; an input terminal connected to the connection between said first and second transistors; and first and second output terminals at the respective drain and source terminals of said first and second transistors that are not connected together.

Claim 5

A microwave switched-line phase shifter comprising: first and second transmission lines having different electrical lengths, each transmission line having first and second ends; first and second field effect transistors, each having a source terminal, a drain terminal, and a gate terminal, one of the source terminals and the drain terminals of the first and second transistors being connected, respectively, to the first and second ends of the said first transmission line; third and fourth field effect transistors, each having a source terminal, a drain terminal, and a gate terminal, one of the source terminals and the drain terminals of the third and fourth transistors being connected, respectively, to the first and second ends of said second transmission line; first, second, third, and fourth impedance control circuits, each circuit comprising a series-connected diode and capacitor, connected respectively between the source and drain terminals of said first, second, third, and fourth transistors; means for applying variable bias voltages to each of said diodes to vary the capacitance of each of said diodes and the capacitances between the source and drain terminals of the respective transistors; an input terminal connected to a series connection of a source terminal and a drain terminal of the first and third transistors; and an output terminal connected to a series connection of a source terminal and a drain terminal of the second and fourth output transistors.

Claim 6

A microwave switched-line phase shifter comprising: first and second transmission lines having different electrical lengths, each transmission line having first and second ends; first and second field effect transistors, each having a source terminal, a drain terminal, and a gate terminal, one of the source terminals and the drain terminals of the first and second transistors being connected, respectively, to the first and second ends of the said first transmission line; third and fourth field effect transistors, each having a source terminal, a drain terminal, and a gate terminal, one of the source terminals and the drain terminals of the third and fourth transistors being connected, respectively, to the first and second ends of said second transmission line; first, second, third, and fourth impedance control circuits, each circuit comprising a series-connected diode and capacitor, connected respectively between the source and drain terminals of said first, second, third, and fourth transistors; means for applying variable bias voltages to each of said diodes to vary the capacitance of each of said diodes and the capacitances between the source and drain terminals of the respective transistors; an input terminal connected to a series connection of a source terminal and a drain terminal of the first and third transistors; and an output terminal connected to a series connection of a source terminal and a drain terminal of the second and fourth output transistors.

Claim 7

A microwave loaded-line phase shifter comprising: a principal transmission line having first and second ends; first and second loaded transmission lines of the same electrical length respectively connected to the first and second ends of said principal transmission line; first and second field effect transistors, each having a source terminal, a drain terminal, and a gate terminal, respectively connected between said first and second loaded transmission lines and ground; first and second impedance control circuits, each circuit comprising a series-connected diode and capacitor connected between the source terminal and the drain terminal of the respective first and second transistors; and means for applying a variable bias voltage to each of said diodes to vary the capacitance of each of said diodes and the capacitances between the source and drain terminals of the respective transistors.

Claim 8

A microwave loaded-line phase shifter comprising: a principal transmission line having first and second ends; first and second loaded transmission lines of the same electrical length respectively connected to the first and second ends of said principal transmission line; first and second field effect transistors, each having a source terminal, a drain terminal, and a gate terminal, respectively connected between said first and second loaded transmission lines and ground; first and second impedance control circuits, each circuit comprising a series-connected diode and capacitor connected between the source terminal and the drain terminal of the respective first and second transistors; and means for applying a variable bias voltage to each of said diodes to vary the capacitance of each of said diodes and the capacitances between the source and drain terminals of the respective transistors.