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US5036522A
Expired / Lapsed
US
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Semiconductor laser with localization of current
Assignee: Thomson Hybrides
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Filing: 1990-05-24
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Granted: 1991-07-30
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Expires: 2010-05-24
Abstract
Abstract The disclosure concerns semiconductor lasers in which the current has to be localized, preferably in the emissive strip. In a laser having at least one emissive strip and a contact for current injection, the current is localized on the strip by means of an overdoped well that goes through the confinement layer with doping gradient. This confinement layer is doped to a level of 10 18 at.cm -3 in the vicinity of the strip and to a level of 2.10 17 at.cm -3 in the vicinity of the injection contact. The disclosed device can be applied to telecommunications and data processing by optical fibers.
Inventors
- 👤 Christian Tanguy
- 👤 Guy Mesquida
- 👤 Gerard-Maurice Marquebielle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:59
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/305; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2054; H01S5/2059; H01S5/227; H01S5/2275
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
74 words
In a semiconductor laser comprising at least one emissive strip sandwiched between two confinement layers, and at least one current injection metallization, wherein the first confinement layer above the emissive strip and below the current injection metallization has a gradient of doping that decreases towards the metallization, and wherein a diffusion of zinc through said first confinement layer creates a well providing a preferred localization of current through the emissive strip of the laser.
Claim 2
Dependent Claim
74 words
In a semiconductor laser comprising at least one emissive strip sandwiched between two confinement layers, and at least one current injection metallization, wherein the first confinement layer above the emissive strip and below the current injection metallization has a gradient of doping that decreases towards the metallization, and wherein a diffusion of zinc through said first confinement layer creates a well providing a preferred localization of current through the emissive strip of the laser.
Claim 3
Dependent Claim
44 words
In a semiconductor laser according to claim 1, wherein the doping of said first confinement layer decreases from 10 18 at.cm -3 in the region close to the emissive strip to 2.10 17 at.cm -3 in the region close to the current injection metallization.
Claim 4
Dependent Claim
28 words
A laser semiconductor according to claim 1, wherein said well that goes through said first confinement layer is doped to the level of 10 18 at.cm -3 .
Claim 5
Dependent Claim
43 words
A semiconductor laser according to claim 1, wherein said well diffused in said first confinement layer is in contact with the overdoped region of said first confinement layer, thereby setting up an electrical continuity between the current injection metallization and the emissive strip.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-29 | 1995-01-28 | 1995-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-29 | 1999-01-28 | 1999-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-29 | 2003-01-28 | 2003-07-30 | $7700.00 | Window Closed / Lapsed |