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US5034799A
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Semiconductor integrated circuit device having a hollow multi-layered lead structure
Assignee: Toshiba Corp
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Filing: 1990-02-14
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Granted: 1991-07-23
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Expires: 2010-02-14
Abstract
Abstract A highly reliable semiconductor integrated circuit device having a hollow multi-layered lead structure is provided. The device comprises lead-supporting columns that can securely support the multi-layered leads and can also efficiently radiate heat generated in operation.
Inventors
- 👤 Kenichi Tomita
- 👤 Tomotoshi Inoue
- 👤 Toshiyuki Terada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/43; H10W20/432; H10W44/00; H10W44/601
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
144 words
In a semiconductor integrated circuit device having lead layers supported by lead-supporting columns formed on a substrate in a manner that the lead layers are covered with one of a vacuum and gas, the improvement comprising: a first lead-supporting column portion at the substrate having a first width; and a second lead-supporting column portion, formed on the first column portion, the second lead-supporting column portion having a second width which is smaller than the first width of the first lead-supporting column portion; wherein the first and second column portions are covered by one of the vacuum and gas; and Wherein a total surface area of the first and second column portions are greater than that of a conventional column structure having a substantially uniform width so that heat generated in operation is radiated at a greater rate than radiated by the conventional column structure.
Claim 2
Dependent Claim
144 words
In a semiconductor integrated circuit device having lead layers supported by lead-supporting columns formed on a substrate in a manner that the lead layers are covered with one of a vacuum and gas, the improvement comprising: a first lead-supporting column portion at the substrate having a first width; and a second lead-supporting column portion, formed on the first column portion, the second lead-supporting column portion having a second width which is smaller than the first width of the first lead-supporting column portion; wherein the first and second column portions are covered by one of the vacuum and gas; and Wherein a total surface area of the first and second column portions are greater than that of a conventional column structure having a substantially uniform width so that heat generated in operation is radiated at a greater rate than radiated by the conventional column structure.
Claim 3
Dependent Claim
14 words
The device of claim 1, wherein said lead-supporting columns become thicker toward said substrate.
Claim 4
Dependent Claim
13 words
The device of claim 1, wherein said lead-supporting columns are made of Al.
Claim 5
Dependent Claim
13 words
The device of claim 1, wherein said lead-supporting columns are made of W.
Claim 6
Dependent Claim
20 words
The device of claim 1, wherein said lead-supporting columns include at least one of Au, Cu, Pt, Rh, and Ni.
Claim 7
Dependent Claim
12 words
The device of claim 3, wherein said substrate includes a compound semiconductor.
Claim 8
Dependent Claim
12 words
The device of claim 4, wherein said substrate includes a compound semiconductor.
Claim 9
Dependent Claim
33 words
The device of claim 1, wherein an upper portion of the first lead-supporting column is provided with a depression for engaging a lower portion of the second lead-supporting column in an interdigitating manner.
Claim 10
Dependent Claim
154 words
In a semiconductor integrated circuit device having lead layers supported by lead-supporting columns formed on a substrate having an insulating layer thereon in a manner that the lead layers are covered with one of a vacuum and gas, the improvement comprising: a first lead-supporting column portion, formed on the insulating layer of the substrate, having a first width; and a second lead-supporting column portion, formed on the first column portion, the second lead-supporting column portion having a second width which is smaller than the first width of the first lead-supporting column portion; wherein the first and second column portions are covered by one of the vacuum and gas; and wherein a total surface area of the first and second column portions are greater than that of a conventional column structure having a substantially uniform width so that head generated in operation is radiated at a greater rate than radiated by the conventional column structure.
Claim 11
Dependent Claim
154 words
In a semiconductor integrated circuit device having lead layers supported by lead-supporting columns formed on a substrate having an insulating layer thereon in a manner that the lead layers are covered with one of a vacuum and gas, the improvement comprising: a first lead-supporting column portion, formed on the insulating layer of the substrate, having a first width; and a second lead-supporting column portion, formed on the first column portion, the second lead-supporting column portion having a second width which is smaller than the first width of the first lead-supporting column portion; wherein the first and second column portions are covered by one of the vacuum and gas; and wherein a total surface area of the first and second column portions are greater than that of a conventional column structure having a substantially uniform width so that head generated in operation is radiated at a greater rate than radiated by the conventional column structure.
Claim 12
Dependent Claim
33 words
The device of claim 9, wherein an upper portion of the first lead-supporting column is provided with a depression for engaging a lower portion of the second lead-supporting column in an interdigitating manner.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-22 | 1995-01-21 | 1995-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-22 | 1999-01-21 | 1999-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-22 | 2003-01-21 | 2003-07-23 | $7700.00 | Window Closed / Lapsed |