Patent US5034304A successfully refreshed from Google Patents.
US5034304A
Expired / Lapsed
US
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Photosensitive compounds and thermally stable and aqueous developable negative images
Assignee: Rohm and Haas Co
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Filing: 1987-05-08
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Granted: 1991-07-23
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Expires: 2007-05-08
Abstract
Abstract Selected photosensitive compounds activated by deep ultraviolet radiation or x-rays and capable of being employed at very low concentrations in photosensitive compositions are provided for producing thermally stable and aqueously developable, negative images on surfaces. The selected photosensitive compounds are halogenated organic compounds, including 1,1-bis[p-chlorophenyl]-2,2,2-trichloroethane, which generate an inorganic halogen acid upon exposure to deep UV or other short wavelength radiations. They may be used at concentrations of less than 5 weight percent of the total solids content of the photosensitive composition to produce aqueously developable negative images using deep UV exposure.
Inventors
- 👤 Wayne E. Feely
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:25
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/038; G03F7/027; G03F7/028; G03F7/029; G03F7/0295; Y; Y10; Y10S; Y10S430/00; Y10S430/165
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
357 words
A short wavelength actinic radiation sensitive negative photoresist comprising as its essential ingredients which together total 100 percent: from about 99.9 to about 50 weight percent of an acid hardening resin system selected from the group consisting of a combination of an aminoplast resin and at least one reactive hydrogen containing compound, where said reactive hydrogen containing compound is selected from the group consisting of novolak, polyvinylphenol, polyglutarimide, poly(meth)acrylic acid copolymers, alkali soluble polyacrylic amide and polymethacrylic amide copolymers, copolymers containing 2-hydroxyethyl (meth) acrylate, polyvinyl alcohol; alkali soluble styrene-allyl alcohol copolymers and mixtures thereof, or a phenoplast resin and at least one formaldehyde generating compound, and from about 0.1 to about 50 weight percent of a photoacid generating compound, where the photoacid generating compound is selected from the group of halogenated organic compounds which (a) absorb short wavelength actinic radiation having a wavelength less than about 299 nanometers selected from deep ultraviolet, x-ray and electron beam radiation; (b) are compatible with the acid hardening resin system in solvents wherein said acid hardening resin system is soluble; (c) generate a halogen acid when the photoresist is exposed to said short wavelength actinic radiation; (d) permits the unexposed photoresist to be developed using an aqueous base; and (e) permits the crosslinking of said acid hardening resin system in the exposed photoresist when said exposed photoresist is heated to elevated temperatures to form a thermally stable negative image, wherein the concentration of said photoacid generating compound in said photoresist is at least 0.1 weight percent when deep ultraviolet radiation having a dosage of less than 10 mJ/Cm 2 is used to expose the photoresist having a thickness less than about 2 microns and wherein the concentration of said photoacid generating compound in said photoresist is at least 10 weight percent when x-ray radiation having a dosage of less than about 130 mJ/Cm 2 is used to expose the photoresist; and wherein the amount of aminoplast or phenoplast in said photoresist is from about 3 to about 50 weight percent and the amount of reactive hydrogen generating compound or formaldehyde generating compound is from about 40 to about 90 weight percent.
Claim 2
Dependent Claim
357 words
A short wavelength actinic radiation sensitive negative photoresist comprising as its essential ingredients which together total 100 percent: from about 99.9 to about 50 weight percent of an acid hardening resin system selected from the group consisting of a combination of an aminoplast resin and at least one reactive hydrogen containing compound, where said reactive hydrogen containing compound is selected from the group consisting of novolak, polyvinylphenol, polyglutarimide, poly(meth)acrylic acid copolymers, alkali soluble polyacrylic amide and polymethacrylic amide copolymers, copolymers containing 2-hydroxyethyl (meth) acrylate, polyvinyl alcohol; alkali soluble styrene-allyl alcohol copolymers and mixtures thereof, or a phenoplast resin and at least one formaldehyde generating compound, and from about 0.1 to about 50 weight percent of a photoacid generating compound, where the photoacid generating compound is selected from the group of halogenated organic compounds which (a) absorb short wavelength actinic radiation having a wavelength less than about 299 nanometers selected from deep ultraviolet, x-ray and electron beam radiation; (b) are compatible with the acid hardening resin system in solvents wherein said acid hardening resin system is soluble; (c) generate a halogen acid when the photoresist is exposed to said short wavelength actinic radiation; (d) permits the unexposed photoresist to be developed using an aqueous base; and (e) permits the crosslinking of said acid hardening resin system in the exposed photoresist when said exposed photoresist is heated to elevated temperatures to form a thermally stable negative image, wherein the concentration of said photoacid generating compound in said photoresist is at least 0.1 weight percent when deep ultraviolet radiation having a dosage of less than 10 mJ/Cm 2 is used to expose the photoresist having a thickness less than about 2 microns and wherein the concentration of said photoacid generating compound in said photoresist is at least 10 weight percent when x-ray radiation having a dosage of less than about 130 mJ/Cm 2 is used to expose the photoresist; and wherein the amount of aminoplast or phenoplast in said photoresist is from about 3 to about 50 weight percent and the amount of reactive hydrogen generating compound or formaldehyde generating compound is from about 40 to about 90 weight percent.
Claim 3
Dependent Claim
60 words
The negative photoresist of claim 1, where said photoacid generating compound is sensitive to deep ultraviolet light and is selected from the group consisting of: 1,1-bis [p-chlorophenyl]-2,2,2-trichloroethane; 1,1-bis [p-methoxyphenyl]-2,2,2-trichloroethane; 1,2,5,6,9,10-hexabromocyclododecane; 1,10-dibromodecane; 1,1-bis[p-chlorophenyl]-2,2-dichloroethane; 4,4, 1 -dichloro-2-(trichloromethyl) benzhydrol or 1,1-bis(chlorophenyl)2-2,2-trichloroethanol; hexachlorodimethyl sulfone; 2-chloro-6-(trichloromethyl) pryidine; 0,0-diethyl-0-(3,5,6-trichloro-2-pyridyl) phosphorothioate; 1,2,3,4,5,6-hexachlorocyclohexane; N(1,1-bis [p-chlorophenyl]-2,2,2-trichoroethyl)acetamide, tris [2,3-dibromopropyl] isocyanurate; 1,1-bis [p-chlorophenyl]-2,2-dichloroethylene; and their isomers, analogs, homologs and residual compounds.
Claim 4
Dependent Claim
33 words
The negative photoresist composition of claim 1, where the photoacid generating compound is selected from the group consisting of 1,1-bis[p-chlorophenyl]-2,2,2-trichloroethane, 1,1-bis[p-methoxyphenyl]-2,2,2-trichloroethane, 1,1-bis[p-chlorophenyl]-2,2,2-trichloroethan ol, tris isocyanurate, and isomers, analogs, homologs and residual compounds thereof.
References Cited (Backward Citations)
US3692560A
Cited
US4404272A
Cited
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