Method and apparatus for investigating latch-up propagation in complementary-metal-oxide-semiconductor (CMOS) circuits

Claim 3

The method of claim 1, wherein the step (g) of registering is further defined as: (g1) imaging the measuring locations on a display device having a plurality of picture elements including controlling the brightness of the picture elements in accordance with the measured intensity.

Claim 4

The method of claim 1, wherein the step (c) of triggering is further defined as: (c1) directing an electron beam onto the CMOS circuit.

Claim 5

The method of claim 1, wherein the step (c) of triggering is further defined as: (c1) directing a photon beam onto the CMOS circuit.

Claim 6

The method of claim 1, wherein the step (c) of triggering is further defined as: (c1) applying an electrical signal to the CMOS circuit.

Claim 7

The method of claim 1, wherein the step (f) of measuring for each repetition of the step (h) is further defined as: (f1) measuring after a predetermined interval which is the same for each repetition.

Claim 8

The method of claim 1, wherein the step (a) if further defined as: (a1) defining the measuring locations in a grid pattern by the electrical signals.

Claim 9

Apparatus for investigating latch-up propagation in a complementary-metal-oxide-semiconductor circuit, comprising: generator means operable to cyclically generate drive signals which define measuring locations on the CMOS circuit; a deflection unit connected to said generator means and driven by the drive signals to be directed towards the individual, defined measuring locations; trigger means in communication with the CMOS circuit and operable to apply a trigger signal to the CMOS circuit and cause latch-up conditions at the respective measuring locations and the emission of infrared radiation therefrom; detector means in communication with said deflection unit for sensing the infrared radiation and producing a corresponding electrical signal; a lens system located between the CMOS circuit and said detector for focusing the infrared radiation onto said deflection unit for guidance to said detector means; delay means connected to said trigger means and to said detector means and operable to generate a measuring control signal delayed a predetermined interval after said trigger signal for controlling said detector means to produce said corresponding electrical signal; measuring means connected to said detector means and responsive to said electrical signal to generate a measured value signal corresponding to the intensity of the infrared radiation; and registering means connected to said generator means and to said measuring means for registering the respective measuring locations and their corresponding measured intensities.

Claim 10

Apparatus for investigating latch-up propagation in a complementary-metal-oxide-semiconductor circuit, comprising: generator means operable to cyclically generate drive signals which define measuring locations on the CMOS circuit; a deflection unit connected to said generator means and driven by the drive signals to be directed towards the individual, defined measuring locations; trigger means in communication with the CMOS circuit and operable to apply a trigger signal to the CMOS circuit and cause latch-up conditions at the respective measuring locations and the emission of infrared radiation therefrom; detector means in communication with said deflection unit for sensing the infrared radiation and producing a corresponding electrical signal; a lens system located between the CMOS circuit and said detector for focusing the infrared radiation onto said deflection unit for guidance to said detector means; delay means connected to said trigger means and to said detector means and operable to generate a measuring control signal delayed a predetermined interval after said trigger signal for controlling said detector means to produce said corresponding electrical signal; measuring means connected to said detector means and responsive to said electrical signal to generate a measured value signal corresponding to the intensity of the infrared radiation; and registering means connected to said generator means and to said measuring means for registering the respective measuring locations and their corresponding measured intensities.

Claim 11

The apparatus of claim 8, wherein said detector means comprises: an electronic switch connected to said delay means for receiving said measuring control signal and responsive thereto switch through said electrical signal.

Claim 12

The apparatus of claim 9, wherein: said electronic switch is a gate circuit including an output connected to said measuring means.

Claim 13

The apparatus of claim 8, wherein said detector means comprises: an electro-optical modulator connected to said delay means for receiving said measuring control signal.

Claim 14

The apparatus of claim 11, wherein said detector means comprises: a spatial filter interposed between said deflection means and said electro-optical modulator.

Claim 15

The apparatus of claim 8, wherein: said trigger means comprises a first pulse generator for generating said trigger signal and a second pulse generator connected to and driving said first pulse generator, said second pulse generator having a pulse frequency that is lower than that of said trigger signal.

Claim 16

The apparatus of claim 13, wherein said measuring means comprises: a low-pass filter connected to said detection means and a lock-in amplifier connected between said low-pass filter and said registering means, said lock-in amplifier including a reference input and connected to said second pulse generator.

Claim 17

The apparatus of claim 8, wherein said delay means comprises: a monostable trigger circuit connected to said trigger means and a delay element connected between said monostable trigger circuit and said detector means.

Claim 18

The apparatus of claim 13, wherein: said generator means produces the drive signals at a first predetermined frequency; and said second pulse generator of said trigger means produces pulses at a frequency that is lower than the frequency of the pulses produced by said second pulse generator.