Patent US5030316A successfully refreshed from Google Patents.
US5030316A
Expired / Lapsed
US
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Trench etching process
Assignee: Fujitsu Ltd
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Filing: 1990-01-08
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Granted: 1991-07-09
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Expires: 2010-01-08
Abstract
Abstract A trench etching process comprises the steps of: preparing a substrate, forming a mask pattern for the trench etching having a material different from that of the substrate, on the substrate, and detecting changes in results of emission spectroanalyses generated by etching the mask pattern and the substrate while using the etching ratios of the mask pattern and the silicon substrate to determine that the trench etching is completed.
Inventors
- 👤 Takushi Motoyama
- 👤 Naomichi Abe
- 👤 Satoru Mihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:48
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/692; H10P50/20; H10P50/24; H10P50/242; H10P50/693; H10P50/694
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
150 words
A trench etching process comprising the steps of: preparing a silicon substrate having a main surface through which trenches are to be formed, extending into the substrate, by trench etching; directly forming a mask on the main surface of the substrate, the mask being patterned to expose the main surface of the substrate at positions at which said trenches are to be formed, the mask material having a different etching rate from the etching rate of said silicon substrate; and simultaneously etching both said patterned mask material and the exposed portions of the main surface of the substrate until said patterned mask material on said main surface of said silicon substrate is completely removed and spectroanalyzing the emissions produced by said etching; and detecting the complete removal of said patterned mask material by detecting the corresponding change in the emission spectroanalysis and, correspondingly, determining that said trench etching is completed.
Claim 2
Dependent Claim
150 words
A trench etching process comprising the steps of: preparing a silicon substrate having a main surface through which trenches are to be formed, extending into the substrate, by trench etching; directly forming a mask on the main surface of the substrate, the mask being patterned to expose the main surface of the substrate at positions at which said trenches are to be formed, the mask material having a different etching rate from the etching rate of said silicon substrate; and simultaneously etching both said patterned mask material and the exposed portions of the main surface of the substrate until said patterned mask material on said main surface of said silicon substrate is completely removed and spectroanalyzing the emissions produced by said etching; and detecting the complete removal of said patterned mask material by detecting the corresponding change in the emission spectroanalysis and, correspondingly, determining that said trench etching is completed.
Claim 3
Dependent Claim
22 words
A trench etching process according to claim 1, wherein said mask material pattern comprises phosphosilicate glass or a thermal oxide of silicon.
Claim 4
Dependent Claim
18 words
A trench etching process according to claim 1, wherein said trench etching is performed by reactive ion etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-08 | 1995-01-07 | 1995-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-08 | 1999-01-07 | 1999-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-08 | 2003-01-07 | 2003-07-09 | $7700.00 | Window Closed / Lapsed |