Patent US5029277A successfully refreshed from Google Patents.
US5029277A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optically compensated bipolar transistor
Assignee: Motorola Solutions Inc
•
Filing: 1990-02-28
•
Granted: 1991-07-02
•
Expires: 2010-02-28
Abstract
Abstract A method for temperature compensation of a bipolar transistor through optically-induced carrier density enhancement. In response to the output of a temperature sensor, the optical output power of a photon source directed toward the bipolar transistor to be compensated is varied. Photons incident on the semiconductor surface effect variations in supplemental carrier concentration that maintain junction potential of the bipolar transistor at a predetermined level.
Inventors
- 👤 Robert C. Kane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:07
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/30; H03F1/302; G; G01; G01D; G01D3/00; G01D3/028; G01D3/036; G01D3/0365; H10; H10W; H10W40/00
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
61 words
A method for compensating junction potential of a bipolar transistor for changes caused by variation in intrinsic carrier density due to temperature change, the method comprising the steps of: (a) sensing temperature of the bipolar transistor; and, in response thereto (b) directing a sufficient number of photons toward the bipolar transistor to substantially maintain the junction potential at a predetermined level.
Claim 2
Independent Claim
61 words
A method for compensating junction potential of a bipolar transistor for changes caused by variation in intrinsic carrier density due to temperature change, the method comprising the steps of: (a) sensing temperature of the bipolar transistor; and, in response thereto (b) directing a sufficient number of photons toward the bipolar transistor to substantially maintain the junction potential at a predetermined level.
Claim 3
Dependent Claim
22 words
The method in accordance with claim 1, wherein the step (a) of measuring temperature comprises measuring junction potential of a reference diode.
Claim 4
Dependent Claim
21 words
The method in accordance with claim 2, wherein the reference diode is placed in relatively close proximity to the bipolar transistor.
Claim 5
Dependent Claim
40 words
The method in accordance with claim 1, wherein the step (b) of directing a sufficient number of photons toward the bipolar transistor comprises varying optical output power of a photon source in response to the temperature sensed in step (a).
Claim 6
Dependent Claim
16 words
The method in accordance with claim 4, wherein the photon source comprises a light emitting diode.
Claim 7
Independent Claim
101 words
A method for compensating junction potential of a bipolar transistor for changes caused by variation in intrinsic carrier density due to temperature change, the method comprising the steps of: (a) providing a photon source having a variable output power, at least in part directed toward the bipolar transistor to be compensated; (b) providing a temperature sensor having an output substantially related to temperature of the bipolar transistor to be compensated; and (c) adjusting the output power of the photon source in response to the temperature sensor output to substantially maintain the junction potential of the bipolar transistor at a predetermined level.
Claim 8
Independent Claim
101 words
A method for compensating junction potential of a bipolar transistor for changes caused by variation in intrinsic carrier density due to temperature change, the method comprising the steps of: (a) providing a photon source having a variable output power, at least in part directed toward the bipolar transistor to be compensated; (b) providing a temperature sensor having an output substantially related to temperature of the bipolar transistor to be compensated; and (c) adjusting the output power of the photon source in response to the temperature sensor output to substantially maintain the junction potential of the bipolar transistor at a predetermined level.
Claim 9
Dependent Claim
16 words
The method in accordance with claim 6, wherein the photon source comprises a light emitting diode.
Claim 10
Dependent Claim
15 words
The method in accordance with claim 6, wherein the temperature sensor comprises a reference diode.
Claim 11
Dependent Claim
14 words
The method in accordance with claim 8, wherein the reference diode is optically passivated.
Claim 12
Independent Claim
95 words
An apparatus for compensating junction potential of a bipolar transistor for changes caused by variation in intrinsic carrier density due to temperature change, the apparatus comprising: a photon source having a variable output power, at least in part directed toward the bipolar transistor to be compensated; a temperature sensor having an output substantially related to temperature of the bipolar transistor to be compensated; and means for adjusting the output power of the photon source in response to the temperature sensor output to substantially maintain the junction potential of the bipolar transistor at a predetermined level.
Claim 13
Independent Claim
95 words
An apparatus for compensating junction potential of a bipolar transistor for changes caused by variation in intrinsic carrier density due to temperature change, the apparatus comprising: a photon source having a variable output power, at least in part directed toward the bipolar transistor to be compensated; a temperature sensor having an output substantially related to temperature of the bipolar transistor to be compensated; and means for adjusting the output power of the photon source in response to the temperature sensor output to substantially maintain the junction potential of the bipolar transistor at a predetermined level.
Claim 14
Dependent Claim
14 words
The apparatus of claim 10, wherein the photon source comprises a light emitting diode.
Claim 15
Dependent Claim
13 words
The apparatus of claim 10, wherein the temperature sensor comprises a reference diode.
Claim 16
Dependent Claim
12 words
The apparatus of claim 12, wherein the reference diode is optically passivated.
Claim 17
Dependent Claim
90 words
For a bipolar transistor substantially housed in a package having at least a partially reflective area disposed upon an interior surface thereof, a method for compensating junction potential for changes caused by variation in intrinsic carrier density due to temperature change, the method comprising: (a) sensing temperature of the bipolar transistor; and, in response thereto (b) directing photons toward said at least partially reflective area so that at least a portion of the photons are reflected onto the bipolar transistor to substantially maintain the junction potential at a predetermined level.
Claim 18
Dependent Claim
90 words
For a bipolar transistor substantially housed in a package having at least a partially reflective area disposed upon an interior surface thereof, a method for compensating junction potential for changes caused by variation in intrinsic carrier density due to temperature change, the method comprising: (a) sensing temperature of the bipolar transistor; and, in response thereto (b) directing photons toward said at least partially reflective area so that at least a portion of the photons are reflected onto the bipolar transistor to substantially maintain the junction potential at a predetermined level.
Claim 19
Dependent Claim
68 words
For a bipolar transistor substantially housed in a package, a method for compensating junction potential for changes caused by variation in intrinsic carrier density due to temperature change, the method comprising: (a) sensing temperature of the bipolar transistor; and, in response thereto (b) directing photons toward said bipolar transistor from a photon source located remotely from said package to substantially maintain the junction potential at a predetermined level.
Claim 20
Dependent Claim
68 words
For a bipolar transistor substantially housed in a package, a method for compensating junction potential for changes caused by variation in intrinsic carrier density due to temperature change, the method comprising: (a) sensing temperature of the bipolar transistor; and, in response thereto (b) directing photons toward said bipolar transistor from a photon source located remotely from said package to substantially maintain the junction potential at a predetermined level.
Claim 21
Dependent Claim
26 words
The method in accordance with claim 15, wherein photons from the remotely located photon source are directed toward the bipolar transistor via a fiber optic cable.
References Cited (Backward Citations)
US3421009A
Cited
US3705316A
Cited
US4725723A
Cited
US4710631A
Cited
US4694157A
Cited
DE3604971A1
Cited
US4812635A
Cited
US4841170A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |