US5027746A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial reactor having a wall which is protected from deposits
Assignee: US Philips Corp
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Filing: 1989-03-21
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Granted: 1991-07-02
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Expires: 2009-03-21
Abstract
Abstract An epitaxial growth reactor for processing wafers (1) of a semiconductor material by exposing it to a reactive gas flow. A wall (8) positioned at a slight distance from the wafer or group of wafers which is exposed to the reactive gas in a double wall, with a very narrow space (34) between the two walls, and this space is filled with a mixture whose composition can be varied and, consequently, the thermal conductivity can be adjusted. The mixture used is a hydrogen/argon mixture, the proportion of each of these gasses in the mixture being adjustable. The interior wall (8) of the double wall is a quartz plate and the exterior wall (9) is made of metal. Relevant FIG.: 1.
Inventors
- 👤 Peter Frijlink
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:12
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/14; C30B29/00; C30B29/02; C30B29/06
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
195 words
An epitaxial growth reactor for processing at least one semiconductor wafer by exposing said wafer to a flow of a reactive gas while said wafer is being heated and gives off heat, said reactor comprising a side wall portion, a cover wall portion, means for supporting said wafer, means for providing said wafer with said flow of reactive gas and means for heating said gas, at least one of said side wall portion or said cover wall portion comprising an interior wall portion positioned at a small distance from the wafer and facing the wafer, an exterior wall portion positioned at a small distance from said interior wall portion, wherein a hollow space is defined between said interior wall portion and said exterior wall portion, which hollow space is provided with a fluid mixture, and including means to adjust the composition of the fluid mixture during said processing in order to adjust the wall conductivity and which space is sufficiently narrow to allow heat to be drawn off from it, through the fluid mixture substantially by conduction rather than by convection said mixture thereby providing means for controlling the thermal conductivity of said wall portion.
Claim 2
Dependent Claim
195 words
An epitaxial growth reactor for processing at least one semiconductor wafer by exposing said wafer to a flow of a reactive gas while said wafer is being heated and gives off heat, said reactor comprising a side wall portion, a cover wall portion, means for supporting said wafer, means for providing said wafer with said flow of reactive gas and means for heating said gas, at least one of said side wall portion or said cover wall portion comprising an interior wall portion positioned at a small distance from the wafer and facing the wafer, an exterior wall portion positioned at a small distance from said interior wall portion, wherein a hollow space is defined between said interior wall portion and said exterior wall portion, which hollow space is provided with a fluid mixture, and including means to adjust the composition of the fluid mixture during said processing in order to adjust the wall conductivity and which space is sufficiently narrow to allow heat to be drawn off from it, through the fluid mixture substantially by conduction rather than by convection said mixture thereby providing means for controlling the thermal conductivity of said wall portion.
Claim 3
Dependent Claim
31 words
The reactor as claimed in claim 1, characterized in that said interior wall portion being constituted by a quartz plate and said exterior wall portion being constituted by a metal plate.
Claim 4
Dependent Claim
32 words
A reactor as claimed in claim 1, characterized in that, the wafer(s) being placed on a horizontal support, the cover wall is a substantially flat cover provided immediately above the portion wafer(s).
Claim 5
Dependent Claim
17 words
A reactor as claimed in claim 1, characterized in the at the mixture is a gas mixture.
Claim 6
Dependent Claim
19 words
A reactor as claimed in claim 4, characterized in that the mixture is a mixture of hydrogen and argon.
Claim 7
Dependent Claim
31 words
The reactor as claimed in claim 1, characterized in that the wafer is supported by horizontal support and the cover wall portion is substantially flat as provided immediately above said wafer.
Claim 8
Dependent Claim
29 words
A reactor as claimed in claim 1 wherein said hollow space is divided into several portions and said mixture being provided individually and independently in each of said portions.
Claim 9
Dependent Claim
22 words
A reactor as claimed in claim 7, characterized in that said hollow space is round and is divided into round concentric portions.
References Cited (Backward Citations)
US4682566A
Cited
JPS59112611A
Cited
US4641603A
Cited
US4579080A
Cited
JPS6186497A
Cited
JPS61103531A
Cited
US4596208A
Cited
JPS62280367A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |