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US5027169A
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Semiconductor device with substrate misorientation
Assignee: Sharp Corp
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Filing: 1990-06-01
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Granted: 1991-06-25
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Expires: 2010-06-01
Abstract
Abstract A semiconductor device comprising a (111)B single-crystalline semiconductor substrate which is misoriented toward (110), and epitaxial layers grown on the substrate by molecular beam epitaxy, whereby the crystallinity and luminescence efficiency of epitaxial layers are significantly improved.
Inventors
- 👤 Kosei Takahashi
- 👤 Masahiro Hosoda
- 👤 Atsuo Tsunoda
- 👤 Masafumi Kondo
- 👤 Takahiro Suyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:56
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/817; B; B82; B82Y; B82Y20/00; H10D; H10D62/00; H10D62/40; H10D62/405; H10H20/01; H10H20/011; H10H20/013; H10H20/811; H10H20/812; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/2912; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
42 words
A semiconductor device comprising a (111)B single-crystal semiconductor substrate that is misoriented toward (110) and epitaxial layers that are grown on said substrate by molecular beam epitaxy; wherein the misorientation angle of said substrate is within the range of 2.5° to 4.0°.
Claim 2
Dependent Claim
42 words
A semiconductor device comprising a (111)B single-crystal semiconductor substrate that is misoriented toward (110) and epitaxial layers that are grown on said substrate by molecular beam epitaxy; wherein the misorientation angle of said substrate is within the range of 2.5° to 4.0°.
Claim 3
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said single crystal semiconductor substrate is made of a material selected from the group consisting of GaAs, GaSb, InAs, InP, GaP, and InSb.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said epitaxial layers are made of the group III-V compound semiconductors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-24 | 1994-12-24 | 1995-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-24 | 1998-12-24 | 1999-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-24 | 2002-12-24 | 2003-06-25 | $7700.00 | Window Closed / Lapsed |