US5026664A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of providing a semiconductor IC device with an additional conduction path
Assignee: Renesas Technology Corp
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Filing: 1989-04-06
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Granted: 1991-06-25
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Expires: 2009-04-06
Abstract
Abstract A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film. The provision of the additional conduction path and/or the removal of part of the patterned conductor layer is preformed in a chemical vapor deposition apparatus which includes a vacuum chamber and an ion beam radiation unit having a housing partitioned into, for example, first, second and third compartments. The ion beam radiation unit has an ion source placed in the first compartment, an ion beam focusing and deflecting device placed in the second compartment and pressure buffer constituted by the third compartment. The third compartment is coupled to and pneumatically isolated from the vacuum chamber for conducting an ion beam emitted from the ion source, passing the second compartment and ejected from the second compartment to the vacuum chamber.
Inventors
- 👤 Mikio Hongo
- 👤 Katsuro Mizukoshi
- 👤 Shuzo Sano
- 👤 Takashi Kamimura
- 👤 Fumikazu Itoh
- 👤 Akira Shimase
- 👤 Satoshi Haraichi
- 👤 Takahiko Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10P; H10P14/00; H10P14/40; H10P14/412; H10W20/067; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
198 words
A method of forming an additional connection wiring on a multilayer IC device, comprising the steps of: forming at least one hole in an insulating layer on said multilayer IC device, by radiating a focused ion beam to expose a part of a conductive layer provided under said insulating layer on said multilayer IC device; selectively depositing a patterned-interposed thin metal film, by scanning the multilayer IC device with a focused ion beam due to relative movement between the focused ion beam and the multilayer IC device, so as to form said patterned-interposed thin metal film, the focused ion beam being radiated in an atmosphere of a metal compound gas onto said hole and onto a predetermined portion of said surface of said insulating layer; and selectively depositing said additional connection wiring by scanning the multilayer IC device with a focused laser beam due to relative movement between the laser beam and the multilayer IC device, so as to form said additional connection wiring, the focused layer beam being radiated in an atmosphere of a conductor metal compound gas on said patterned-interposed thin metal film so that said additional connection wiring is electrically connected with said conductive layer.
Claim 2
Independent Claim
198 words
A method of forming an additional connection wiring on a multilayer IC device, comprising the steps of: forming at least one hole in an insulating layer on said multilayer IC device, by radiating a focused ion beam to expose a part of a conductive layer provided under said insulating layer on said multilayer IC device; selectively depositing a patterned-interposed thin metal film, by scanning the multilayer IC device with a focused ion beam due to relative movement between the focused ion beam and the multilayer IC device, so as to form said patterned-interposed thin metal film, the focused ion beam being radiated in an atmosphere of a metal compound gas onto said hole and onto a predetermined portion of said surface of said insulating layer; and selectively depositing said additional connection wiring by scanning the multilayer IC device with a focused laser beam due to relative movement between the laser beam and the multilayer IC device, so as to form said additional connection wiring, the focused layer beam being radiated in an atmosphere of a conductor metal compound gas on said patterned-interposed thin metal film so that said additional connection wiring is electrically connected with said conductive layer.
Claim 3
Dependent Claim
43 words
A method according to claim 1, wherein said insulating layer is formed of SiO 2 , and said metal compound gas is formed of a Cr compound gas so that said patterned-interposed thin metal film is deposited as a patterned-interposed thin or film.
Claim 4
Dependent Claim
75 words
A method according to claim 1, wherein the patterned-interposed thin metal film is made of metal, and has a thickness, such that adherence between the insulating layer and the thin metal film, and between the thin metal film and additional connection wiring, are greater than that between the insulating layer and the additional metal wiring, and such that the patterned-interposed thin metal film acts as a shield to prevent transmission of said focused laser beam.
Claim 5
Dependent Claim
27 words
A method according to claim 3, wherein each of the thin metal film and the additional connection wiring are selectively deposited by a selective chemical vapor deposition.
Claim 6
Dependent Claim
21 words
A method according to claim 1, wherein the additional connection wiring is selectively deposited only on the patterned-interposed thin metal film.
Claim 7
Dependent Claim
27 words
A method according to claim 1, wherein each of the thin metal film and the additional connection wiring are selectively deposited by a selective chemical vapor deposition.
Claim 8
Dependent Claim
16 words
A method according to claim 1, wherein the thin metal film has a thickness of 100-300Å.
Claim 9
Dependent Claim
34 words
A method according to claim 1, wherein the metal compound gas and the conductor metal compound gas are selected from the group consisting of metal carbonyl compound, metal-containing halogen compound and metal-containing alkyl compound.
Claim 10
Dependent Claim
57 words
A method according to claim 1, wherein the metal compound gas and conductor metal compound gas are selected from the group consisting of CR(CO) 6 , Mo(CO) 6 , W(CO) 6 , Ni(CO) 6 , MoH 6 , WF 6 , MOC1 5 , Al(CH 3 ) 3 , CD(CH 3 ) 2 and Al(iso-butyl) 3 .
Claim 11
Dependent Claim
25 words
A method according to claim 1, wherein the metal compound gas is Cr(CO) 6 , and the conductor metal compound gas is Mo(CO) 6 .
Claim 12
Dependent Claim
28 words
A method according to claim 1, wherein said additional connection wiring includes a bonding pad, electrically connection wiring includes a bonding pad, electrically connected to said conductive layer.
Claim 13
Dependent Claim
24 words
A method according to claim 1, wherein the additional connection wiring is electrically connected to the conductive layer via the patterned-interposed thin metal film.
Claim 14
Dependent Claim
123 words
A method according to claim 1, wherein said patterned-interposed thin metal film includes a relatively small area portion and a relatively large area portion, and said additional connection wiring forming step is performed by directing an ion beam onto said relatively small area portion of said patterned film in an atmosphere containing said conductor metal compound gas to form a first portion of said additional connection wiring and by directing said focused laser beam onto said relatively large area portion of said patterned-interposed thin metal film in an atmosphere containing said conductor metal compound gas to form a second portion of said additional connection wiring, thereby providing the additional connection wiring having a relatively small area portion and a relatively large area portion.
Claim 15
Dependent Claim
66 words
A method according to claim 13, wherein the IC device includes a region having obstacles, the thin metal film and additional connection wiring being provided on said region having obstacles and on another region of the device, and wherein the relatively small area portion is provided on the region having obstacles and the relatively large area portion is provided on said another region of the device.
Claim 16
Dependent Claim
26 words
A method according to claim 1, further comprising the step of removing at least a part of a conductive layer of the IC device for disconnection.
Claim 17
Dependent Claim
55 words
A method according to claim 1, further comprising the step of subjecting said additional connection wiring and said patterned-interposed thin metal film underlying said additional connection wiring to a laser beam in a non-oxidizing atmosphere to thereby lower the electrical resistance of a combination of said additional connection wiring and said patterned-interposed thin metal film.
Claim 18
Independent Claim
229 words
A method of forming an additional connection wiring on a multilayer IC device, comprising the steps of: forming at least one hole in an insulating layer on said multilayer IC device, by radiating a focused ion beam to expose a part of a conductive layer provided under said insulating layer on said multilayer IC device; selectively depositing a patterned-interposed thin metal film, by scanning the multilayer IC device with a focused ion beam due to relative movement between the focused ion beam and the multilayer IC device so as to form said patterned-interposed thin metal film, the focused ion beam being radiated in an atmosphere of a metal compound gas onto said hole and onto a predetermined portion of said surface of said insulating layer, an electron shower being directed, simultaneously with said focused ion beam radiation, onto the surface of the insulating layer, to neutralize electric charges accumulated on the surface of the insulating layer; and selectively depositing said additional connection wiring by scanning the multilayer IC device with a focused laser beam due to relative movement between the laser beam and the multilayer IC device so as to form said additional connection wiring, the focused laser beam being radiated in an atmosphere of a conductor metal compound gas on said patterned-interposed thin metal film so that said additional connection wiring is electrically connected with said conductive layer.
Claim 19
Independent Claim
229 words
A method of forming an additional connection wiring on a multilayer IC device, comprising the steps of: forming at least one hole in an insulating layer on said multilayer IC device, by radiating a focused ion beam to expose a part of a conductive layer provided under said insulating layer on said multilayer IC device; selectively depositing a patterned-interposed thin metal film, by scanning the multilayer IC device with a focused ion beam due to relative movement between the focused ion beam and the multilayer IC device so as to form said patterned-interposed thin metal film, the focused ion beam being radiated in an atmosphere of a metal compound gas onto said hole and onto a predetermined portion of said surface of said insulating layer, an electron shower being directed, simultaneously with said focused ion beam radiation, onto the surface of the insulating layer, to neutralize electric charges accumulated on the surface of the insulating layer; and selectively depositing said additional connection wiring by scanning the multilayer IC device with a focused laser beam due to relative movement between the laser beam and the multilayer IC device so as to form said additional connection wiring, the focused laser beam being radiated in an atmosphere of a conductor metal compound gas on said patterned-interposed thin metal film so that said additional connection wiring is electrically connected with said conductive layer.
Claim 20
Dependent Claim
49 words
A method according to claim 17, wherein the step of forming the at least one hole an electron shower is directed, simultaneously with said focused ion beam radiation, onto a surface of the insulating layer, so as to neutralize electric charges accumulated on the surface of the insulating layer.
Claim 21
Dependent Claim
42 words
A method according to claim 14, wherein said insulating layer is formed of SiO 2 , and said metal compound gas is formed of Cr compound gas so that said patterned-interposed thin metal film is deposited as a patterned-interposed thin Cr film.
Claim 22
Dependent Claim
76 words
A method according to claim 17, wherein the patterned-interposed thin metal film is made of a metal, and has a thickness, such that adherence between the insulating layer and the thin metal film, and between the thin metal film and additional connection wiring, are greater than that between the insulating layer and the additional metal wiring, and such that the patterned-interposed thin metal film acts as a shield to prevent transmission of said focused laser beam.
Claim 23
Dependent Claim
27 words
A method according to claim 20, wherein each of the thin metal film and the additional connection wiring are selectively deposted by a selective chemical vapor deposition.
Claim 24
Dependent Claim
27 words
A method according to claim 17, wherein each of the thin metal film and the additioanl connection wiring are selectively deposited by a selective chemical vapor deposition.
Claim 25
Dependent Claim
118 words
A method according to claim 17, wherein said patterned-interposed thin metal film includes a relatively small area portion and a relatively large area portion, and wherein an ion beam is directed onto said relatively small area portion of said patterned-interposed thin metal film in an atmosphere containing said conductor metal compound gas to form a first portion of said additioanl connection wiring and said focused laser beam is directed onto said relatively large area portion of said patterned-interposed thin metal film in an atmosphere containing said conductor metal compound gas to form a second portion of said additional connection wiring, thereby providing the additioanl connection wiring having a relatively small area portion and a relatively large area portion.
Claim 26
Dependent Claim
30 words
A method according to claim 17, in which at least a part of a conductive layer of the IC device is removed for disconnection by radiating a focused ion beam.
Claim 27
Dependent Claim
34 words
A method according to claim 24, wherein said at least a part of said conductive layer is removed by said focused ion beam used in the step of forming said at least one hole.
Claim 28
Dependent Claim
55 words
A method according to claim 17, further comprising the step of subjecting said additional connection wiring and said patterned-interposed thin metal film underlying said additional connection wiring to a laser beam in a non-oxidizing atmosphere to thereby lower the electrical resistance of a combination of said additional connection wiring and said patterned-interposed thin metal film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-24 | 1994-12-24 | 1995-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-24 | 1998-12-24 | 1999-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-24 | 2002-12-24 | 2003-06-25 | $7700.00 | Window Closed / Lapsed |