Abstract A semiconductor device of a type having a pin grid array, comprises a printed circuit board and a planar metal stem with a plurality of through holes. The stem is made of metal having a coefficient of thermal expansion alpha s. The printed circuit board has a predetermined wiring pattern on its upper surface and is made of a material having a maximum coefficient alpha p in the widthwise direction. The printed circuit board is superposed over the upper surface of the metal stem. A plurality of lead pins have upper portions inserted into the through holes of the stem and board and are in alignment with each other when the board and the stem are superposed one upon another. Connecting members connect the upper portions of the lead pins with their corresponding wiring patterns. In the semiconductor device, the absolute value DELTA alpha of the difference between the maximum coefficient alpha p of the board and the coefficient alpha s of the stem ( DELTA alpha = alpha p - alpha s) is less than or equal to "1.52x10-4/L" ( DELTA alpha </=1.52 x10-4/L).
A semiconductor device comprising: a metal stem having a planar shape and a plurality of through holes, and being made of metal having a coefficient of thermal expansion αs; a printed circuit board having wiring patterns on its upper surface and a plurality of through holes, being made of a material having a maximum coefficient αp in the widthwise direction, and being superposed over the upper surface of said metal stem to form a lamination, said lamination having a maximum width (L); a plurality of lead pins having upper portions inserted into said through holes of said stem and board which are in alignment with each other when said board and said stem are superposed one upon another; and connecting members for connecting said upper portions of said lead pins with corresponding wiring pattern; wherein an absolute value Δα of the difference between said maximum coefficient αp of said board and said coefficient αs of said stem (Δα=αp-αs) is less than or equal to about "1.52×10 -4 /L" (Δα≦1.52×10 -4 /L).
Claim 2
Dependent Claim
171 words
A semiconductor device comprising: a metal stem having a planar shape and a plurality of through holes, and being made of metal having a coefficient of thermal expansion αs; a printed circuit board having wiring patterns on its upper surface and a plurality of through holes, being made of a material having a maximum coefficient αp in the widthwise direction, and being superposed over the upper surface of said metal stem to form a lamination, said lamination having a maximum width (L); a plurality of lead pins having upper portions inserted into said through holes of said stem and board which are in alignment with each other when said board and said stem are superposed one upon another; and connecting members for connecting said upper portions of said lead pins with corresponding wiring pattern; wherein an absolute value Δα of the difference between said maximum coefficient αp of said board and said coefficient αs of said stem (Δα=αp-αs) is less than or equal to about "1.52×10 -4 /L" (Δα≦1.52×10 -4 /L).
Claim 3
Dependent Claim
88 words
A semiconductor device according to claim 1 wherein; said metal stem is made of steel in the form of a flat plate halving a coefficient of thermal expansion αs of 1.42×10 -5 (αs=1.42×10 -5- ) and has a square upper surface having one side 40 millimeters in length; and said printed circuit board is made of a material which has a coefficient of thermal expansion of "1.3×10 -5 " in one widthwise direction (X) and a coefficient of thermal expansion of "1.8×10 -5 " in another direction (Y).
Claim 4
Dependent Claim
87 words
A semiconductor device according to claim 2 wherein; said metal stem is made of steel in the form of a flat plate having a coefficient of thermal expansion αs of 1.42×10 -5 (αs=1.42×10 -5 ) and has a square upper surface having one side 40 millimeters in length; and said printed circuit board is made of material which has a coefficient of thermal expansion of "1.3×10 -5 " in one widthwise direction (X) and a coefficient of thermal expansion of "1.3×10 -5 " in another direction (Y).