US5023880A
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Semiconductor laser device
Assignee: Toshiba Corp
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Filing: 1990-02-12
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Granted: 1991-06-11
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Expires: 2010-02-12
Abstract
Abstract A semiconductor laser device including a semiconductor substrate of a first conductivity type, a double hetero structure, including of a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In 1-w (Ga 1-y Al y )wp of the second conductivity type formed on the semiconductor substrate, a second upper cladding layer of In 1-w (Ga 1-w Al z ) w P of the second conductivity type partially formed on the first upper cladding layer, a first contact layer of In 1-w (Ga 1-s Al s ) w P (0<s<z≦1) of the second conductivity type formed on the second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on the first upper clad layer and the first contact layer. The value of y in In 1-w (Ga 1-y Al y ) w P which constitutes the first upper cladding layer, and the value of z in In 1-w (Ga 1-z Al z ) w P which constitutes the second upper cladding layer satisfy a relation 0.6≦y<z≦1.
Inventors
- 👤 Mariko Suzuki
- 👤 Kazuhiko Itaya
- 👤 Masayuki Ishikawa
- 👤 Yukio Watanabe
- 👤 Genichi Hatakoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:27
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/04; H01S5/042; H01S5/0421; H01S5/2054; H01S5/2081; H01S5/209; H01S5/2205; H01S5/2206; H01S5/221; H01S5/321
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
248 words
In a semiconductor laser device comprising: a semiconductor substrate of a first conductivity type, double hetero structure, including a lower cladding layer of the first conductivity type, an active layer, a first upper cladding layer of In 1-w (Ga 1-y Al y ) w P of a second conductivity type, formed on said semiconductor substrate, a second upper cladding layer of In 1-w (Ga 1-z Al z ) w P of the second conductivity type partially formed on said first upper clad layer, a first contact layer of In 1-w (Ga 1-s Al s ) w P (0≦s<z≦1) of the second conductivity type formed on said second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on a first upper cladding layer and said first contact layer, wherein the value of y in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer, and the value of z in In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfy a relation 0.6≦y<z≦1; wherein the value of w in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer and In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfies relations 0.50≦w≦0.54, and the value of w in In 1-w (Ga 1-s Al s ) w P in said first contact layer satisfies the relation 0≦w≦1.
Claim 2
Dependent Claim
248 words
In a semiconductor laser device comprising: a semiconductor substrate of a first conductivity type, double hetero structure, including a lower cladding layer of the first conductivity type, an active layer, a first upper cladding layer of In 1-w (Ga 1-y Al y ) w P of a second conductivity type, formed on said semiconductor substrate, a second upper cladding layer of In 1-w (Ga 1-z Al z ) w P of the second conductivity type partially formed on said first upper clad layer, a first contact layer of In 1-w (Ga 1-s Al s ) w P (0≦s<z≦1) of the second conductivity type formed on said second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on a first upper cladding layer and said first contact layer, wherein the value of y in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer, and the value of z in In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfy a relation 0.6≦y<z≦1; wherein the value of w in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer and In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfies relations 0.50≦w≦0.54, and the value of w in In 1-w (Ga 1-s Al s ) w P in said first contact layer satisfies the relation 0≦w≦1.
Claim 3
Dependent Claim
35 words
A device according to claim 1, wherein the values of w, s, and z in In 1-w (Ga 1-s Al s ) w P which constitutes said first contact layer satisfy relations 0.50≦w≦0.54, and 0≦s≦z≦1.
Claim 4
Dependent Claim
49 words
A device according to claim 1, further comprising a layer of In 1-w (Ga 1-u Al u ) w P of the second conductivity type having a thickness of not more than 100 Å on said first upper cladding layer, wherein the value of u satisfies a relation 0≦u<z≦1.
Claim 5
Dependent Claim
42 words
A device according to claim 1, further comprising a layer of In 1-w (Ga 1-u Al u ) w P of the second conductivity type between said first and second upper cladding layers, wherein the value of u satisfies a relation 0≦u<z≦1.
Claim 6
Dependent Claim
27 words
A device according to claim 4, further comprising a semiconductor layer of the first conductivity type between said first upper cladding layer and said second contact layer.
Claim 7
Dependent Claim
25 words
A device according to claim 1, further comprising a buffer layer of the first conductivity type between said semiconductor substrate and said lower cladding layer.
Claim 8
Dependent Claim
16 words
A device according to claim 6, wherein said semiconductor substrate and said buffer layer comprise GaAs.
Claim 9
Dependent Claim
48 words
A device according to claim 1, wherein said lower cladding layer comprises In 1-w (Ga 1-v Al v ) w P, said active layer comprises In 1-w (Ga 1-x Al x ) w P, and the values of v, x, and w satisfy relations 0≦x≦1, 0≦x<v≦1, and 0.50≦w≦0.54.
Claim 10
Dependent Claim
29 words
A device according to claim 1, wherein first and second electrode layers are formed on a lower surface of said semiconductor substrate and on said second contact layer, respectively.
Claim 11
Dependent Claim
48 words
A device according to claim 1, wherein the value of w in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer and In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfies relations 0.50≦w≦0.54.
Claim 12
Dependent Claim
36 words
A device according to claim 1, wherein the values of w, s, and z in In 1-w (Ga 1-s Al s ) w P which constitutes said first contact layer satisfy relations 0.50≦w≦0.54, and 0≦s≦z 1.
Claim 13
Dependent Claim
244 words
In a semiconductor laser device comprising: a semiconductor substrate of a first conductivity type, a double hetero structure, including a lower cladding layer of the first conductivity type, an active layer, a first upper cladding layer of In 1-w (Ga 1-y Al y ) w P of a second conductivity type, formed on said semiconductor substrate, an etching stopping layer of In 1-w (Ga 1-w Al y ) w P of the second conductivity type having a thickness of not more than 100 Å on said first upper cladding layer, a second upper cladding layer of In 1-w (Ga 1-z Al z ) w P of the second conductivity type partially formed on said etching stopping layer, a first contact layer of In 1-w (Ga 1-s Al s ) w P (0≦s<z≦1) of the second conductivity type formed on said second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on said etching stopping layer and said first contact layer, wherein the value of y in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer, the value of u in In 1-w (Ga 1-u Al u ) w P which constitutes said etching stopping layer, and the value z in In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfy relations 0.6≦y≦1, and 0≦u<z≦1, wherein the value of w satisfies the relation 0≦w≦1.
Claim 14
Dependent Claim
244 words
In a semiconductor laser device comprising: a semiconductor substrate of a first conductivity type, a double hetero structure, including a lower cladding layer of the first conductivity type, an active layer, a first upper cladding layer of In 1-w (Ga 1-y Al y ) w P of a second conductivity type, formed on said semiconductor substrate, an etching stopping layer of In 1-w (Ga 1-w Al y ) w P of the second conductivity type having a thickness of not more than 100 Å on said first upper cladding layer, a second upper cladding layer of In 1-w (Ga 1-z Al z ) w P of the second conductivity type partially formed on said etching stopping layer, a first contact layer of In 1-w (Ga 1-s Al s ) w P (0≦s<z≦1) of the second conductivity type formed on said second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on said etching stopping layer and said first contact layer, wherein the value of y in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer, the value of u in In 1-w (Ga 1-u Al u ) w P which constitutes said etching stopping layer, and the value z in In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfy relations 0.6≦y≦1, and 0≦u<z≦1, wherein the value of w satisfies the relation 0≦w≦1.
Claim 15
Dependent Claim
25 words
A device according to claim 12, further comprising a buffer layer of the first conductivity type between said semiconductor substrate and said lower cladding layer.
Claim 16
Dependent Claim
16 words
A device according to claim 13, wherein said semiconductor substrate and said buffer layer comprise GaAs.
Claim 17
Dependent Claim
241 words
In a semiconductor laser device comprising; a semiconductor substrate of a first conductivity type, a double hetero structure, including a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In 1-w (Ga 1-y Al y ) w P of a second conductivity type, formed on said semiconductor substrate, an etching stopping layer of In 1-w (Ga 1-u Al u ) w P of the second conductivity type between said first and second upper cladding layers, a second upper cladding layer of In 1-w (Ga 1-z Al z ) w P of the second conductivity type partially formed on said etching stopping layer, a first contact layer of In 1-w (Ga 1-s Al s ) w P (0≦s<z≦1) of the second conductivity type formed on said second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on first upper cladding layer and said first contact layer, wherein the value of y in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer, the value of u in In 1-w (Ga 1-u Al u ) w P which constitutes said etching stopping layer, and the value of z in In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfy relation 0.6≦Y≦1, and 0≦u≦z 1, and wherein the value of w satisfies the relation 0≦w≦1.
Claim 18
Dependent Claim
241 words
In a semiconductor laser device comprising; a semiconductor substrate of a first conductivity type, a double hetero structure, including a lower cladding layer of the first conductivity type, an active layer, and a first upper cladding layer of In 1-w (Ga 1-y Al y ) w P of a second conductivity type, formed on said semiconductor substrate, an etching stopping layer of In 1-w (Ga 1-u Al u ) w P of the second conductivity type between said first and second upper cladding layers, a second upper cladding layer of In 1-w (Ga 1-z Al z ) w P of the second conductivity type partially formed on said etching stopping layer, a first contact layer of In 1-w (Ga 1-s Al s ) w P (0≦s<z≦1) of the second conductivity type formed on said second upper cladding layer, and a second contact layer of GaAs of the second conductivity type formed on first upper cladding layer and said first contact layer, wherein the value of y in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer, the value of u in In 1-w (Ga 1-u Al u ) w P which constitutes said etching stopping layer, and the value of z in In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfy relation 0.6≦Y≦1, and 0≦u≦z 1, and wherein the value of w satisfies the relation 0≦w≦1.
Claim 19
Dependent Claim
27 words
A device according to claim 15, further comprising a semiconductor layer of the first conductivity type between said first upper cladding layer and said second contact layer.
Claim 20
Dependent Claim
48 words
A device according to claim 15, wherein the value of w in In 1-w (Ga 1-y Al y ) w P which constitutes said first upper cladding layer and In 1-w (Ga 1-z Al z ) w P which constitutes said second upper cladding layer satisfies relations 0.50≦w≦0.54.
Claim 21
Dependent Claim
36 words
A device according to claim 15, wherein the values of w, s, and z in In 1-w (Ga 1-s Al s ) w P which constitutes said first contact layer satisfy relations 0.50≦w≦0.54, and 0≦s≦z 1.
Claim 22
Dependent Claim
25 words
A device according to claim 15, further comprising a buffer layer of the first conductivity type between said semiconductor substrate and said lower cladding layer.
References Cited (Backward Citations)
US4740976A
Cited
US4845724A
Cited
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