PIN-FET combination with buried p-layer

Claim 2

A Photodiode-FET combination having the following grown on one another on a substrate (1) of III-V semiconductor material; an absorption layer (20-3) having low doping for a first conductivity type, a contact layer (20-4) having high doping for this first conductivity type, and a first cover layer (20-5) having a region (20-6) formed therein that extends from the surface of the first cover layer (20-5) down to the contact layer (20-4) and that is doped for an opposite, second conductivity type, whereby the absorption layer, the contact layer and the first cover layer (20-3, 20-4, 20-5) form a photodiode (20), a buffer layer (30-3) having low doping for the first conductivity type, a channel layer (30-4) having high doping for the first conductivity type, and a second cover layer (30-5) having a gate region (30-6) therein; whereby the buffer layer, the channel layer and the second cover layer (30-3, 30-4, 30-5) form an FET (30), and having contact for the electrical connection of the photodiode (20) and of the FET (30), a basic layer (2) of semiconductor on the substrate (1); a first semiconductor layer (3) on the basic layer (2), said first semiconductor layer forming the absorption layer (20-3) in the region of the photodiode (20) and forming the buffer layer (30-3) in the region of the FET (30); a second semiconductor layer (4) on the first semiconductor layer (3), said second semiconductor layer forming the contact layer (20-4) in the region of the photodiode (20) and forming the channel layer (30-4) in the region of the FET (30); a third semiconductor layer (5) on the second semiconductor layer (4), said third semiconductor layer forming the respective cover layers (20-5, 30-5); a first layer portion (7, 8) doped for the second conductivity type located between the substrate (1) and the channel layer (30-4) in the region of the FET (30); and the photodiode (20) and the FET (30) separated from one another by an isolating trench that extends down into the substrate (1).

Claim 3

A Photodiode-FET combination having the following grown on one another on a substrate (1) of III-V semiconductor material; an absorption layer (20-3) having low doping for a first conductivity type, a contact layer (20-4) having high doping for this first conductivity type, and a first cover layer (20-5) having a region (20-6) formed therein that extends from the surface of the first cover layer (20-5) down to the contact layer (20-4) and that is doped for an opposite, second conductivity type, whereby the absorption layer, the contact layer and the first cover layer (20-3, 20-4, 20-5) form a photodiode (20), a buffer layer (30-3) having low doping for the first conductivity type, a channel layer (30-4) having high doping for the first conductivity type, and a second cover layer (30-5) having a gate region (30-6) therein, whereby the buffer layer, the channel layer and the second cover layer (30-3, 30-4, 30-5) form an FET (30), and having contacts for the electrical connection of the photodiode (20) and of the FET (30), a first semiconductor layer (3) on the substrate (1), said first semiconductor layer forming the absorption layer (20-3) in the region of the photodiode (20) and forming the buffer layer (30-3) in the region of the FET (30); a second semiconductor layer (4) on the first semiconductor layer (3), said second semiconductor layer forming the contact layer (20-4) in the region of the photodiode (20) and forming the channel layer (30-4) in the region of the FET (30); a third semiconductor layer (5) on the second semiconductor layer (4), said third semiconductor layer forming the respective cover layers (20-5, 30-5); a first layer portion (9) of the substrate (1) doped for the second conductivity type and located at the surface of the substrate (1), said doped first layer portion being separated from the absorption layer (20-3) in the region of the photodiode (20) by a second layer portion (10) of the substrate (1) that is doped for the first conductivity type and being adjacent the buffer layer (30-3) in the region of the FET (30); and the photodiode (20) and the FET (30) separated from one another by an isolating trench that extends down into the substrate (1).

Claim 4

A Photodiode-FET combination having the following grown on one another on a substrate (1) of III-V semiconductor material; an absorption layer (20-3) having low doping for a first conductivity type, a contact layer (20-4) having high doping for this first conductivity type, and a first cover layer (20-5) having a region (20-6) formed therein that extends from the surface of the first cover layer (20-5) down to the contact layer (20-4) and that is doped for an opposite, second conductivity type, whereby the absorption layer, the contact layer and the first cover layer (20-3, 20-4, 20-5) form a photodiode (20), a buffer layer (30-3) having low doping for the first conductivity type, a channel layer (30-4) having high doping for the first conductivity type, and a second cover layer (30-5) having a gate region (30-6) therein, whereby the buffer layer, the channel layer and the second cover layer (30-3, 30-4, 30-5) form an FET (30), and having contacts for the electrical connection of the photodiode (20) and of the FET (30), a first semiconductor layer (3) on the substrate (1), said first semiconductor layer forming the absorption layer (20-3) in the region of the photodiode (20) and forming the buffer layer (30-3) in the region of the FET (30); a second semiconductor layer (4) on the first semiconductor layer (3), said second semiconductor layer forming the contact layer (20-4) in the region of the photodiode (20) and forming the channel layer (30-4) in the region of the FET (30); a third semiconductor layer (5) on the second semiconductor layer (4), said third semiconductor layer forming the respective cover layers (20-5, 30-5); a first layer portion (9) of the substrate (1) doped for the second conductivity type and located at the surface of the substrate (1), said doped first layer portion being separated from the absorption layer (20-3) in the region of the photodiode (20) by a second layer portion (10) of the substrate (1) that is doped for the first conductivity type and being adjacent the buffer layer (30-3) in the region of the FET (30); and the photodiode (20) and the FET (30) separated from one another by an isolating trench that extends down into the substrate (1).

Claim 5

A Photodiode-FET combination according to claim 1, wherein the first layer portion (7) doped for the second conductivity type is formed in the basic layer (2) by selective doping before the growth of the first semiconductor layer (3).

Claim 6

A Photodiode-FET combination according to claim 1, wherein the first layer portion (8) doped for the second conductivity type is formed by selective ion implantation following the growth of the third semiconductor layer (5).

Claim 7

A Photodiode-FET combination according to claim 1, wherein a second layer portion (9) of the substrate (1) doped for the second conductivity type is adjacent to the overgrown surface of the substrate (1) and to the basic layer (2).

Claim 8

A Photodiode-FET combination according to claim 1, wherein a barrier layer doped for the second conductivity type is located between the substrate (1) and the basic layer (2).

Claim 9

A Photodiode-FET combination according to claim 1, wherein the first conductivity type is n-type and the second conductivity type is p-type.

Claim 10

A Photodiode-FET combination according to claim 1, wherein the first conductivity type is p-type and the second conductivity type is n-type.

Claim 11

A Photodiode-FET combination having the following grown on one another on a substrate of III-V semiconductor material; an absorption layer having low doping for a first conductivity type, a contact layer having high doping for this first conductivity type, and a first cover layer having a region formed therein that extends from the surface of the first cover layer down to the contact layer and that is doped for the opposite, second conductivity type, whereby the absorption layer, the contact layer and the first cover layer form a photodiode, a buffer layer having low doping for the first conductivity type, a channel layer having high doping for the first conductivity type, and a second cover layer having a gate region therein, whereby the buffer layer, the channel layer and the second cover layer form an FET, and having contact for the electrical connection of the photodiode and of the FET, a basic layer of semiconductor material on the substrate; a first semiconductor layer on the basic layer, said first semiconductor layer forming the absorption layer in the region of the photodiode and forming the buffer layer in the region of the FET; a second semiconductor layer on the first semiconductor layer, said semiconductor layer forming the contact layer in the region of the photodiode and forming the channel layer in the region of the FET; a third semiconductor layer on the second semiconductor layer, said third semiconductor layer forming the first and second cover layers for the photodiode and the FET, respectively; a layer portion doped for the second conductivity type located between the substrate and the channel layer in the region of the FET; the photodiode and the FET separated from one another by an isolating trench that extends down into the substrate; and the layer portion doped for the second conductivity type formed in the basic layer by selective doping before the growth of the first semiconductor layer.

Claim 12

A Photodiode-FET combination having the following grown on one another on a substrate of III-V semiconductor material; an absorption layer having low doping for a first conductivity type, a contact layer having high doping for this first conductivity type, and a first cover layer having a region formed therein that extends from the surface of the first cover layer down to the contact layer and that is doped for the opposite, second conductivity type, whereby the absorption layer, the contact layer and the first cover layer form a photodiode, a buffer layer having low doping for the first conductivity type, a channel layer having high doping for the first conductivity type, and a second cover layer having a gate region therein, whereby the buffer layer, the channel layer and the second cover layer form an FET, and having contact for the electrical connection of the photodiode and of the FET, a basic layer of semiconductor material on the substrate; a first semiconductor layer on the basic layer, said first semiconductor layer forming the absorption layer in the region of the photodiode and forming the buffer layer in the region of the FET; a second semiconductor layer on the first semiconductor layer, said semiconductor layer forming the contact layer in the region of the photodiode and forming the channel layer in the region of the FET; a third semiconductor layer on the second semiconductor layer, said third semiconductor layer forming the first and second cover layers for the photodiode and the FET, respectively; a layer portion doped for the second conductivity type located between the substrate and the channel layer in the region of the FET; the photodiode and the FET separated from one another by an isolating trench that extends down into the substrate; and the layer portion doped for the second conductivity type formed in the basic layer by selective doping before the growth of the first semiconductor layer.

Claim 13

A Photodiode-FET combination according to claim 9, wherein a layer portion of the substrate doped for the second conductivity type is adjacent to the overgrown surface of the substrate and to the basic layer.

Claim 14

A Photodiode-FET combination according to claim 9, wherein a barrier layer doped for the second conductivity type is located between the substrate and the basic layer.

Claim 15

A Photodiode-FET combination according to claim 9, wherein the first conductivity type is n-type and the second conductivity type is p-type.

Claim 16

A Photodiode-FET combination according to claim 9, wherein the first conductivity type is p-type and the second conductivity type is n-type.

Claim 17

A Photodiode-FET combination having the following grown on one another on a substrate of III-V semiconductor material; an absorption layer having low doping for a first conductivity layer, a contact layer having high doping for this first conductivity type, and a first cover layer having a region formed therein that extends from the surface of the first cover layer down to the contact layer and that is doped for an opposite, second conductivity type, whereby the absorption layer, the contact layer and the first cover layer form a photodiode, a buffer layer having low doping for the first conductivity type, a channel layer having high doping for the first conductivity type, and a second cover type having a gate region therein, whereby the buffer layer, the channel layer and the second cover layer form an FET, and having contacts for the electrical connection of the photodiode and of the FET, a basic layer of semiconductor material on the substrate; a first semiconductor layer on the basic layer, said first semiconductor layer forming the absorption layer in the region of the photodiode and forming the buffer layer in the region of the FET; a second semiconductor layer on the first semiconductor layer, said semiconductor layer forming the contact layer in the region of the photodiode and forming the channel layer in the region of the FET; a third semiconductor layer on the second semiconductor layer, said third semiconductor layer forming the first and second cover layers for the photodiode and the FET, respectively; a layer portion doped for the second conductivity type located between the substrate and the channel layer in the region of the FET; and the photodiode and the FET separated from one another by an isolating trench that extends down into the substrate; and the layer portion doped for the second conductivity type formed by selective ion implantation following the growth of the third semiconductor layer.

Claim 18

A Photodiode-FET combination having the following grown on one another on a substrate of III-V semiconductor material; an absorption layer having low doping for a first conductivity layer, a contact layer having high doping for this first conductivity type, and a first cover layer having a region formed therein that extends from the surface of the first cover layer down to the contact layer and that is doped for an opposite, second conductivity type, whereby the absorption layer, the contact layer and the first cover layer form a photodiode, a buffer layer having low doping for the first conductivity type, a channel layer having high doping for the first conductivity type, and a second cover type having a gate region therein, whereby the buffer layer, the channel layer and the second cover layer form an FET, and having contacts for the electrical connection of the photodiode and of the FET, a basic layer of semiconductor material on the substrate; a first semiconductor layer on the basic layer, said first semiconductor layer forming the absorption layer in the region of the photodiode and forming the buffer layer in the region of the FET; a second semiconductor layer on the first semiconductor layer, said semiconductor layer forming the contact layer in the region of the photodiode and forming the channel layer in the region of the FET; a third semiconductor layer on the second semiconductor layer, said third semiconductor layer forming the first and second cover layers for the photodiode and the FET, respectively; a layer portion doped for the second conductivity type located between the substrate and the channel layer in the region of the FET; and the photodiode and the FET separated from one another by an isolating trench that extends down into the substrate; and the layer portion doped for the second conductivity type formed by selective ion implantation following the growth of the third semiconductor layer.

Claim 19

A Photodiode-FET combination according to claim 14, wherein a layer portion of the substrate doped for the second conductivity type is adjacent to the overgrown surface of the substrate and to the basic layer.

Claim 20

A Photodiode-FET combination according to claim 14, wherein a barrier layer doped for the second conductivity type is located between the substrate and the basic layer.

Claim 21

A Photodiode-FET combination according to claim 14, wherein the first conductivity type is n-type and the second conductivity type is p-type.

Claim 22

A Photodiode-FET combination according to claim 14, wherein the first conductivity type is p-type and the second conductivity type is n-type.

Claim 23

A Photodiode-FET combination according to claim 2, wherein the first conductivity type is p-type and the second conductivity type is n-type.

Claim 24

A Photodiode-FET combination according to claim 2, wherein the first conductivity type is n-type and the second conductivity type is p-type.