US5023682A
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Semiconductor memory device
Assignee: Mitsubishi Electric Corp
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Filing: 1989-06-23
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Granted: 1991-06-11
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Expires: 2009-06-23
Abstract
Abstract A semiconductor memory device comprises a p - -type semiconductor substrate (1), thin p + -type regions (15, 80) formed thereon, n + -type regions (6, 7) surrounded with the p + -type regions (15, 80), a first gate electrode (2) formed on a charge storage region in the n + -type region (6), and a second gate electrode (3) formed on the p + -type region (80) and serving as a word line. The p + -type regions (15, 80) prevent passage of electrons out of electron-hole pairs induced by alpha rays so as to prevent occurrence of soft errors. Advantageously, the thin p+ layer used to control threshold voltage for a transfer gate of the device is extended and also used for prevention of such soft errors, thus providing reduced bulk for the device. In order to reduce bulk further, the n+-type regions (6, 7) are also reduced in thickness. Films 16 and 17 are added to prevent an increase in diffusion resistance of the regions (6, 7) and the interconnection resistance of the second gate electrode (3). An oxide film (16) is formed on the side wall of the second gate electrode (3), a titanium silicide film (17) is formed on the n + -type regions (6, 7) and a titanium silicide film (18) is formed on the second gate electrode (3) in a self-aligning manner. A bit line is formed on the semiconductor region and connected thereto. An interlayer insulation film is optionally formed between the bit line and the refractory metal silicide film placed on the semiconductor n + -type region. The interlayer insulation film preferably comprises a silicon oxide film or a phosphorous oxide film. Finally, a protective film is optionally formed on the bit line. The protective film is preferably made of a material having a low dielectric constant.
Inventors
- 👤 Masahiro Shimizu
- 👤 Hiroki Shimano
- 👤 Masahide Inuishi
- 👤 Katsuhiro Tsukamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:58
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/48; H10B12/485; H10P; H10P14/00; H10P14/40; H10P14/412; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
293 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line: a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; and a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region.
Claim 2
Dependent Claim
293 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line: a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; and a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region.
Claim 3
Dependent Claim
29 words
A semiconductor memory device in accordance with claim 1, further comprising: an insulator film for isolating elements formed on said semiconductor substrate on both ends of said semiconductor layer.
Claim 4
Dependent Claim
346 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; an insulator film for isolating elements formed on said semiconductor substrate on both ends of said semiconductor layer; and a region of the first conductivity type for preventing inversion and parasitism formed in said semiconductor substrate beneath said insulator film for isolating elements and having higher impurity concentration than that in said semiconductor substrate.
Claim 5
Dependent Claim
346 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; an insulator film for isolating elements formed on said semiconductor substrate on both ends of said semiconductor layer; and a region of the first conductivity type for preventing inversion and parasitism formed in said semiconductor substrate beneath said insulator film for isolating elements and having higher impurity concentration than that in said semiconductor substrate.
Claim 6
Dependent Claim
306 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; and an oxide film formed on a side wall of said second gate electrode.
Claim 7
Dependent Claim
306 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; and an oxide film formed on a side wall of said second gate electrode.
Claim 8
Dependent Claim
44 words
A semiconductor memory device in accordance with claim 1, wherein said first, second and third refractory metal silicide films are films of high fusing point which comprise a titanium silicide film, a tantalum silicide film, a tungsten silicide film or a molybdenum silicide film.
Claim 9
Dependent Claim
53 words
A semiconductor memory device in accordance with claim 1, wherein said semiconductor substrate of the first conductivity type has an impurity concentration of 10×10 14 to 1×10 16 cm -3 , and said semiconductor layer of the first conductivity type has an impurity concentration of 1×10 15 to 1×10 17 cm -3 .
Claim 10
Dependent Claim
312 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; and an interlayer insulation film of low dielectric constant formed between second refractory metal silicide film and said bit line.
Claim 11
Dependent Claim
312 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; and an interlayer insulation film of low dielectric constant formed between second refractory metal silicide film and said bit line.
Claim 12
Dependent Claim
24 words
A semiconductor memory device in accordance with claim 7, wherein said interlayer insulation film comprises a silicon oxide film or a phosphorous glass film.
Claim 13
Dependent Claim
305 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; and a protective film having low dielectric constant formed on said bit line.
Claim 14
Dependent Claim
305 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; and a protective film having low dielectric constant formed on said bit line.
Claim 15
Dependent Claim
23 words
A semiconductor memory device in accordance with claim 9, wherein said protective film comprises a silicon oxide film or a phosphorous glass film.
Claim 16
Dependent Claim
14 words
The semiconductor memory device of claim 1, wherein said radioactive rays are alpha rays.
Claim 17
Dependent Claim
310 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; and a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; wherein said shallow semiconductor layer of the first conductivity type has a depth less than 0.5 ∠m.
Claim 18
Dependent Claim
310 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; and a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region; wherein said shallow semiconductor layer of the first conductivity type has a depth less than 0.5 ∠m.
Claim 19
Dependent Claim
40 words
A semiconductor memory device in accordance with claim 12, wherein said first and second semiconductor regions of the second conductivity type serving as the source and drain regions are shallower than said shallow semiconductor layer of the first conductivity type.
Claim 20
Dependent Claim
40 words
A semiconductor memory device in accordance with claim 1, wherein said first and second semiconductor regions of the second conductivity type serving as the source and drain regions are shallower than said shallow semiconductor layer of the first conductivity type.
Claim 21
Dependent Claim
33 words
A semiconductor memory device in accordance with claim 1, wherein said first and second semiconductor regions of the second conductivity type are surrounded by said shallow semiconductor layer of the first conductivity type.
Claim 22
Dependent Claim
316 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said shallow semiconductor layer extending under said second gate electrode and under at least one of said one and the other source/drain regions; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; and a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region.
Claim 23
Dependent Claim
316 words
A thin semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type, a part of said first semiconductor region serving as one source/drain region and the other part thereof serving as a charge storage region for storing data; a second semiconductor region of the second conductivity type formed apart from said first semiconductor region, said second semiconductor region serving as the other source/drain region and connected to a bit line; a first gate insulator film formed on said charge storage region in said first semiconductor region; a first gate electrode formed on said first gate insulator film, said first gate electrode being connected to a power supply for supplying constant voltage; a second gate insulator film formed at least between said first and second semiconductor regions; a second gate electrode formed on said second gate insulator film to provide a transfer gate, said second gate electrode being connected to a word line; a shallow semiconductor layer of the first conductivity type formed on said semiconductor substrate and having higher impurity concentration than that in said semiconductor substrate for controlling a threshold voltage of said transfer gate and for providing a barrier layer to prevent soft errors caused by radioactive rays; said shallow semiconductor layer extending under said second gate electrode and under at least one of said one and the other source/drain regions; said first and second semiconductor regions of the second conductivity type and said second gate insulation film being on said semiconductor layer, a first refractory metal silicide film formed on said one source/drain region in said first semiconductor region; a second refractory metal silicide film formed on said second semiconductor region; and a third refractory metal silicide film formed on said second gate electrode; said first and second refractory metal silicide films being formed to reduce the resistance of the source/drain region.
Claim 24
Dependent Claim
20 words
A semiconductor memory device as recited in claim 16, wherein said shallow semiconductor layer extends under both the source/drain regions.
References Cited (Backward Citations)
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