Non-volatile semiconductor memory device with facility of storing tri-level data

Claim 2

A non-volatile memory cell for multi-level data storage comprising: a semiconductor substrate of one conductivity type; first and second impurity regions of a second conductivity type spaced apart in the surface of said semiconductor substrate; a first conductive layer provided over the surface area of said semiconductor substrate between said first and second impurity regions in a location closer to and in relation to overlap a portion significantly less than the entirety of said first impurity region with an insulating layer underlying said first conductive layer; a second conductive layer provided over the surface area of said semiconductor substrate between said first and second impurity regions, spaced from said first conductive layer, closer to and in relation to overlap a portion significantly less than the entirety of said second impurity region with a second insulating layer underlying said second conductive layer; said first and second conductive layers being electrically isolated from each other; and a third conductive layer provided to extend over and between said first and second conductive layers with a third insulating layer underlying said third conductive layer.

Claim 3

A non-volatile memory cell for multi-level data storage according to claim 1 wherein said first and second conductive layers have substantially an identical configuration.

Claim 4

A non-volatile memory cell for multi-level data storage according to claim 1, wherein said first and second conductive layers are arranged in symmetry with each other with respect to a center line between said first and second impurity regions.

Claim 5

A non-volatile memory cell for multi-level data storage according to claim 1, wherein said insulating layer provided between said first conductive layer and the surface of said semiconductor substrate, said second insulating layer provided between said second conductive layer and the surface of said semiconductor substrate, and a portion of said third insulating layer lying between said first and second conductive layers on the surface of said semiconductor substrate all have substantially the same thickness.

Claim 6

A non-volatile memory cell for multi-level data storage according to claim 1, wherein said first and second impurity regions are formed to have substantially the same electrical characteristics.

Claim 7

A non-volatile memory cell for multi-level data storage as recited in claim 1, wherein said first and second conductive layers are configured in shapes which differ from each other.

Claim 8

A non-volatile memory cell for multi-level data storage as recited in claim 1, wherein said first and second conductive layers are configured asymmetrically with respect to a center line of said third conductive layer.

Claim 9

A non-volatile memory cell for multi-level data storage as recited in claim 1, wherein said first impurity region comprises a first portion of relatively high impurity concentration and a second portion of relatively low impurity concentration and said first conductive layer overlaps said second portion.

Claim 10

A non-volatile memory cell for multi-level data storage comprising: a semiconductor substrate of one conductivity type; first and second impurity regions of a second conductivity type spaced apart in the surface of said semiconductor substrate; a first conductive layer provided over the surface area of said semiconductor substrate between said first and second impurity regions in a location closer to and in relation to overlap a portion significantly less than the entirety of said first impurity region with an insulating layer underlying said first conductive layer; a second conductive layer provided over the surface area of said semiconductor substrate between said first and second impurity regions, spaced form said first conductive layer, closer to and in relation to overlap a portion significantly less than the entirety of said second impurity region with a second insulating layer underlying said second conductive layer; said first and second conductive layers being electrically isolated from each other; and a third conductive layer provided to extend over and between said first and second conductive layers with a third insulating layer underlying said third conductive layer, wherein said first and second conductive layer comprise floating gates into which electrons are injected for non-volatile data storage, and said third conductive layer comprises a control gate which is supplied with a signal for controlling the electron injection into said first and second conductive layers and the selection of said memory cell.

Claim 11

A non-volatile memory cell for multi-level data storage comprising: a semiconductor substrate of one conductivity type; first and second impurity regions of a second conductivity type spaced apart in the surface of said semiconductor substrate; a first conductive layer provided over the surface area of said semiconductor substrate between said first and second impurity regions in a location closer to and in relation to overlap a portion significantly less than the entirety of said first impurity region with an insulating layer underlying said first conductive layer; a second conductive layer provided over the surface area of said semiconductor substrate between said first and second impurity regions, spaced form said first conductive layer, closer to and in relation to overlap a portion significantly less than the entirety of said second impurity region with a second insulating layer underlying said second conductive layer; said first and second conductive layers being electrically isolated from each other; and a third conductive layer provided to extend over and between said first and second conductive layers with a third insulating layer underlying said third conductive layer, wherein said first and second conductive layer comprise floating gates into which electrons are injected for non-volatile data storage, and said third conductive layer comprises a control gate which is supplied with a signal for controlling the electron injection into said first and second conductive layers and the selection of said memory cell.

Claim 12

A semiconductor memory device capable of 3-level data storage comprising: a memory cell array having a plurality o non-volatile memory cells arranged in a matrix of rows and columns, said columns including source column lines and drain column lines; each of said memory cells including an impurity region to serve as a drain of a memory cell and an impurity region to serve as a source of the memory cell which are provided spaced apart in the surface of a semiconductor substrate, first and second floating gates, each capable of individually storing charges in a programmed writing operation for three level logic data storage and provided in an electrical isolation from each other over the surface area of said semiconductor substrate between said impurity regions with an underlying insulation layers, and a control gate means in response to an externally applied address for selecting one row from said memory cell array; means operable in response to said externally applied address to select a column from said memory cell array to which the source of the addressed memory cell is coupled; means operable in response to said externally applied address to select a column of said memory cell array to which the drain of the addressed memory cell is coupled; means operative in response to data to be written for applying predetermined potentials to said selected source column line and drain column line; and means to be activated on a data read-out portion for sensing the current flow through said selected drain column line.

Claim 13

A semiconductor memory device capable of 3-level data storage comprising: a memory cell array having a plurality o non-volatile memory cells arranged in a matrix of rows and columns, said columns including source column lines and drain column lines; each of said memory cells including an impurity region to serve as a drain of a memory cell and an impurity region to serve as a source of the memory cell which are provided spaced apart in the surface of a semiconductor substrate, first and second floating gates, each capable of individually storing charges in a programmed writing operation for three level logic data storage and provided in an electrical isolation from each other over the surface area of said semiconductor substrate between said impurity regions with an underlying insulation layers, and a control gate means in response to an externally applied address for selecting one row from said memory cell array; means operable in response to said externally applied address to select a column from said memory cell array to which the source of the addressed memory cell is coupled; means operable in response to said externally applied address to select a column of said memory cell array to which the drain of the addressed memory cell is coupled; means operative in response to data to be written for applying predetermined potentials to said selected source column line and drain column line; and means to be activated on a data read-out portion for sensing the current flow through said selected drain column line.

Claim 14

A semiconductor memory device according to claim 10, further comprising means for providing two different reference currents to said current sensing means.

Claim 15

A semiconductor memory device according to claim 10 wherein said drain column lines and source column lines of said memory cell array are arranged alternately.

Claim 16

A non-volatile semiconductor memory device according to claim 10, wherein said control gate means is operable to apply a predetermined first high-level potential to the selected row in data writing, thereby applying said first high-level potential to the control gate of the selected memory cell.

Claim 17

A non-volatile semiconductor memory device according to claim 13, wherein said selected source column line and drain column line are supplied with ground potential and a second high-level potential lower than said first high-level potential in accordance with the data to be written under the control of said potential applying means.

Claim 18

A non-volatile semiconductor memory device according to claim 14 wherein said control gate means is operable on data read-out to apply to the selected row a third potential lower than said second high level potential.

Claim 19

A non-volatile memory cell for three or more levels of data storage comprising: a semiconductor substrate of a first conductivity type, drain and source regions of a second conductivity type spaced apart in the surface of said substrate; control gate means responsive to a voltage applied thereto in excess of a threshold voltage to effect conduction of current in said memory cell; first storage means for storing electron charges to change the value of said threshold voltage to establish a first cell conduction level; second storage means for storing electron charges to change the value of said threshold voltage to establish a second cell conduction level; whereby a first logic data level is represented by the absence of charge in said first and second storage means, a second logic data level is represented by storage of charge in only said first storage means, and a third logic data level is represented by storage of charge in both said first and said second storage means; wherein said first storage means comprises a first floating gate conductive layer located above said substrate extending from a first end positioned between said drain and source regions to a second end positioned above a first one of said source and drain regions at an intermediate point thereof to partially overlap said region; and said second storage means comprises a second floating gate conductive layer, electrically isolated form said first floating gate conductive layer, and located above said substrate extending from a first end positioned between said drain and source regions to a second end positioned above an intermediate point of, and to partially overlap, a second one of said source and drain regions.

Claim 20

A non-volatile memory cell for three or more levels of data storage comprising: a semiconductor substrate of a first conductivity type, drain and source regions of a second conductivity type spaced apart in the surface of said substrate; control gate means responsive to a voltage applied thereto in excess of a threshold voltage to effect conduction of current in said memory cell; first storage means for storing electron charges to change the value of said threshold voltage to establish a first cell conduction level; second storage means for storing electron charges to change the value of said threshold voltage to establish a second cell conduction level; whereby a first logic data level is represented by the absence of charge in said first and second storage means, a second logic data level is represented by storage of charge in only said first storage means, and a third logic data level is represented by storage of charge in both said first and said second storage means; wherein said first storage means comprises a first floating gate conductive layer located above said substrate extending from a first end positioned between said drain and source regions to a second end positioned above a first one of said source and drain regions at an intermediate point thereof to partially overlap said region; and said second storage means comprises a second floating gate conductive layer, electrically isolated form said first floating gate conductive layer, and located above said substrate extending from a first end positioned between said drain and source regions to a second end positioned above an intermediate point of, and to partially overlap, a second one of said source and drain regions.