Method for preparing a high mobility, lightly-doped channel mis-type FET with reduced latch up and punchthrough

Claim 1

A method for making a MISFET having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at a low impurity concentration to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET.

Claim 2

A method for making a MISFET having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at a low impurity concentration to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET.

Claim 8

A method of making a MISFET having a channel length of not more than 2 μm between a source and a drain, comprising the steps of forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate, and introducing impurity ions at predetermined energy levels into said well region by using said mask, continuously changing the energy from one of the predetermined energy levels to another of the predetermined energy levels, said predetermined energy levels being such as to produce peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at a low impurity concentration to enable a high speed carrier movement in said channel without causing a punch-through phenomenon.

Claim 9

A method of making a MISFET having a channel length of not more than 2 μm between a source and a drain, comprising the steps of forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate, and introducing impurity ions at predetermined energy levels into said well region by using said mask, continuously changing the energy from one of the predetermined energy levels to another of the predetermined energy levels, said predetermined energy levels being such as to produce peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at a low impurity concentration to enable a high speed carrier movement in said channel without causing a punch-through phenomenon.

Claim 11

A method for making a MISFET of a minute size having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at an impurity concentration lower than 10 16 cm -3 to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET; wherein said predetermined energy is changed continuously from said first energy level to said second energy level.

Claim 12

A method for making a MISFET of a minute size having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at an impurity concentration lower than 10 16 cm -3 to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET; wherein said predetermined energy is changed continuously from said first energy level to said second energy level.

Claim 13

A method for making a MISFET of a minute size having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at an impurity concentration lower than 10 16 cm -3 to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET; wherein said predetermined energy is changed continuously from said second energy level to said first energy level.

Claim 14

A method for making a MISFET of a minute size having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at an impurity concentration lower than 10 16 cm -3 to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET; wherein said predetermined energy is changed continuously from said second energy level to said first energy level.

Claim 15

A method for making a MISFET of a minute size having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at an impurity concentration lower than 10 16 cm -3 to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET; wherein said predetermined energy includes a third one of said energy levels causing a third peak of said impurity concentration distribution at a position deeper than said second peak, said third peak acting to prevent a latch-up phenomenon of said MISFET; and wherein said predetermined energy is changed continuously from said first energy level to said third energy level.

Claim 16

A method for making a MISFET of a minute size having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at an impurity concentration lower than 10 16 cm -3 to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET; wherein said predetermined energy includes a third one of said energy levels causing a third peak of said impurity concentration distribution at a position deeper than said second peak, said third peak acting to prevent a latch-up phenomenon of said MISFET; and wherein said predetermined energy is changed continuously from said first energy level to said third energy level.

Claim 17

A method for making a MISFET of a minute size having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at an impurity concentration lower than 10 16 cm -3 to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET; wherein said predetermined energy includes a third one of said energy levels causing a third peak of said impurity concentration distribution at a position deeper than said second peak, said third peak acting to prevent a latch-up phenomenon of said MISFET; and wherein said predetermined energy is changed continuously from said third energy level to said first energy level.

Claim 18

A method for making a MISFET of a minute size having a channel length of not more than 2 μm between a source and a drain, comprising the steps of: forming a mask for exposing a region for forming a well on a planar surface of a semiconductor substrate; and introducing impurity ions at a predetermined energy into said well region by using said mask; said predetermined energy includes a plurality of energy levels so as to form peaks of the impurity concentration distribution at positions deeper than the bottom surface of said source and said drain and to maintain at least a partial layer of said channel at an impurity concentration lower than 10 16 cm -3 to enable a high speed carrier movement in said channel; a first one of said energy levels causing a first peak of said impurity concentration distribution adjacent to the bottom of said channel, said first peak acting to control the threshold voltage of said MISFET, and a second one of said energy levels causing a second peak of the impurity concentration distribution at a position deeper than said first peak, said second peak acting to suppress the punch-through phenomenon in said MISFET; wherein said predetermined energy includes a third one of said energy levels causing a third peak of said impurity concentration distribution at a position deeper than said second peak, said third peak acting to prevent a latch-up phenomenon of said MISFET; and wherein said predetermined energy is changed continuously from said third energy level to said first energy level.