Abstract A semiconductor laser device includes an n type first cladding layer and a multi quantum well active layer successively grown on an n type substrate, a p type second cladding layer having a stripe ridge narrower in the neighborhood of the laser cavity facets than within the laser disposed on the active layer, a p type buffer layer containing p type dopants in a higher concentration than in the second cladding layer and disposed on the second cladding layer except on the stripe ridge, an n type current blocking layer disposed on the buffer layer, and a p type contact layer disposed on an upper surface of the stripe ridge and the second cladding layer and the current blocking layer, the multi quantum well being disordered except directly opposite the wider portion of the stripe ridge by the diffusion of p type dopant impurities from the p type buffer layer.
A semiconductor laser device comprising: an n type substrate; an n type first cladding layer and a multi quantum well active layer successively grown on said n type substrate; a p type second cladding layer having a stripe ridge with a top surface opposite said substrate and a relatively narrow width in the neighborhood of a facet of the laser and a relatively wide width inside the laser disposed on said active layer; a p type buffer layer containing a higher concentration of p type dopants than said second cladding layer and disposed on said second cladding layer except on the top surface of said stripe ridge; a n type current blocking layer disposed on said buffer layer; and a p type contact layer disposed on the top surface of said stripe ridge and said current blocking layer wherein said multi quantum well layer, except directly opposite the relatively wide width of said stripe ridge remote from the facet, is disordered by diffusion of p type dopants from said p type buffer layer.
Claim 2
Dependent Claim
173 words
A semiconductor laser device comprising: an n type substrate; an n type first cladding layer and a multi quantum well active layer successively grown on said n type substrate; a p type second cladding layer having a stripe ridge with a top surface opposite said substrate and a relatively narrow width in the neighborhood of a facet of the laser and a relatively wide width inside the laser disposed on said active layer; a p type buffer layer containing a higher concentration of p type dopants than said second cladding layer and disposed on said second cladding layer except on the top surface of said stripe ridge; a n type current blocking layer disposed on said buffer layer; and a p type contact layer disposed on the top surface of said stripe ridge and said current blocking layer wherein said multi quantum well layer, except directly opposite the relatively wide width of said stripe ridge remote from the facet, is disordered by diffusion of p type dopants from said p type buffer layer.
Claim 3
Dependent Claim
16 words
A semiconductor laser device as defined in claim 1 wherein said p type dopants are Zn.
Claim 4
Dependent Claim
14 words
A semiconductor laser device as defined in claim 1 which comprises AlGaAs series semiconductor.dir