Patent US5017989A successfully refreshed from Google Patents.
US5017989A
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Solid state radiation sensor array panel
Assignee: Xerox Corp
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Filing: 1989-12-06
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Granted: 1991-05-21
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Expires: 2009-12-06
Abstract
Abstract A solid state radiation sensor array panel comprising a thick deposited radiation detector layer capable of generating electron-hole pairs in response to being irradiated, and a matrix array of transistors comprising source and drain electrode elements, a charge transport layer, and a dielectric layer disposed over one surface of the detector layer. Means is provided for establishing an electric field across the detector layer, which field is collapsible to establish a higher field in irradiated areas so as to establish a current path, between the source and drain electrode elements, through pixel areas of the charge transport layer. The currents passing through pixel areas are passed to a readout circuit for processing the radiation image information.
Inventors
- 👤 Robert A. Street
- 👤 Benjamin Kazan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:41
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
144 words
A solid state radiation sensor array panel comprising a generally planar thick deposited radiation detector layer capable of generating electron-hole pairs in response to being irradiated, a generally planar matrix array of source and drain electrode element disposed over said detector layer, a generally planar non-single crystal semiconductor charge transport layer located adjacent to said matrix array, a dielectric layer separating said detector layer and said charge transport layer, biasing means for establishing an electric field across said detector layer and for forming gate means in said detector layer relative to said source and drain electrode elements when said electric field collapses in irradiated areas for permitting current flow between said source and drain electrode means through said charge transport layer in areas corresponding to said irradiated areas, and means for reading out currents passing between source and drain electrodes in said matrix array.
Claim 2
Dependent Claim
144 words
A solid state radiation sensor array panel comprising a generally planar thick deposited radiation detector layer capable of generating electron-hole pairs in response to being irradiated, a generally planar matrix array of source and drain electrode element disposed over said detector layer, a generally planar non-single crystal semiconductor charge transport layer located adjacent to said matrix array, a dielectric layer separating said detector layer and said charge transport layer, biasing means for establishing an electric field across said detector layer and for forming gate means in said detector layer relative to said source and drain electrode elements when said electric field collapses in irradiated areas for permitting current flow between said source and drain electrode means through said charge transport layer in areas corresponding to said irradiated areas, and means for reading out currents passing between source and drain electrodes in said matrix array.
Claim 3
Dependent Claim
41 words
The solid state radiation sensor array panel as defined in claim 1 wherein the cumulative thickness of said matrix array, said charge transport layer and said dielectric layer is at least ten times thinner than the thickness of said detector layer.
Claim 4
Dependent Claim
47 words
The solid state radiation sensor array panel as defined in claim 1 comprising orthogonally disposed source and drain lines and said means for reading out comprises means for sequentially energizing said source lines and for detecting, a line at a time, currents flowing on said drain lines.
Claim 5
Dependent Claim
50 words
The solid state radiation sensor array panel as defined in claim 1 wherein said biasing means for establishing an electric field comprises a planar conductive layer disposed over the surface of said detector layer remote from said dielectric layer, and means for connecting said conductive layer to a potential source.
Claim 6
Dependent Claim
41 words
The solid state radiation sensor array panel as defined in claim 1 comprising orthogonally disposed source and drain lines and said source electrode elements are connected to and disposed normal to said source lines and are parallel to said drain lines.
Claim 7
Dependent Claim
58 words
The solid state radiation sensor array panel as defined in claim 5 wherein each of said drain lines is disposed between two adjacent ones of said source electrode elements, whereby a current path may extend from a single source electrode element to an adjacent drain line or from two source electrode elements to said drain line disposed therebetween.
Claim 8
Dependent Claim
31 words
The solid state radiation sensor array panel as defined in claim 1 further including an array of conductive gate pads, with one pad associated with each source and drain electrode element.
Claim 9
Dependent Claim
33 words
The solid state radiation sensor array panel as defined in claim 7 further including a source of reference potential and a conductive path connecting said gate pads to said source of reference potential.
Claim 10
Dependent Claim
21 words
The solid state radiation sensor array panel as defined in claim 1 wherein said detector layer comprises a photoconductive a material.
Claim 11
Dependent Claim
19 words
The solid state radiation sensor array panel as defined in claim 9 wherein said photoconductive material comprises amorphous silicon.
Claim 12
Dependent Claim
20 words
The solid state radiation sensor array panel as defined in claim 9 wherein said photoconductive material comprises a chalcogenide glass.
Claim 13
Dependent Claim
19 words
The solid state radiation sensor array panel as defined in claim 11 wherein said chalcogenide glass is amorphous selenium.
Claim 14
Dependent Claim
19 words
The solid state radiation sensor array panel as defined in claim 11 wherein said chalcogenide glass is arsenic selenide.
Claim 15
Dependent Claim
19 words
The solid state radiation sensor array panel as defined in claim 9 wherein said photoconductive material comprises zinc sulfide.
Claim 16
Dependent Claim
20 words
The solid state radiation sensor array panel as defined in claim 9 wherein said photoconductive material is an organic material.
Claim 17
Dependent Claim
20 words
The solid state radiation sensor array panel as defined in claim 1 wherein said detector layer comprises a piezoelectric material.
Claim 18
Dependent Claim
37 words
The solid state radiation sensor array panel as defined in claim 16 further including a rectifying layer separating said dielectric layer from said piezoelectric layer for allowing said panel to store charge thereon representative of transient images.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |