US5017828A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Image sensor
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1989-04-25
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Granted: 1991-05-21
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Expires: 2009-04-25
Abstract
Abstract An improved image sensor made of photosensitive semiconductor materials with a number of pixels each including an n-type semiconductor layer, a p-type semiconductor layer and an intrinsic semiconductor layer disposed between the n-type and p-type layers. The n-type and p-type layers are made from a semiconductor material having a high resistivity. The high resistivity of the n-type layer and the p-type layer functions to prevent crosstalk currents from passing between the pixels.
Inventors
- 👤 Takeshi Fukada
- 👤 Mitsunori Sakama
- 👤 Nobumitsu Amachi
- 👤 Naoya Sakamoto
- 👤 Mitsufumi Codama
- 👤 Toru Takayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:05
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F39/00; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
80 words
An image sensor comprising: a pair of electrodes for defining a plurality of sensor elements, at least one of said pair being transparent: a photosensitive semiconductor layer disposed between said pair of electrodes for forming said sensor elements, wherein the portions of said photosensitive semiconductor layer which contact said pair of electrodes are comprised of either silicon carbide or silicon nitride, and wherein said photosensitive semiconductor layer forming each of said sensor elements is contiguous with the adjacent sensor elements.
Claim 2
Dependent Claim
80 words
An image sensor comprising: a pair of electrodes for defining a plurality of sensor elements, at least one of said pair being transparent: a photosensitive semiconductor layer disposed between said pair of electrodes for forming said sensor elements, wherein the portions of said photosensitive semiconductor layer which contact said pair of electrodes are comprised of either silicon carbide or silicon nitride, and wherein said photosensitive semiconductor layer forming each of said sensor elements is contiguous with the adjacent sensor elements.
Claim 3
Dependent Claim
16 words
The sensor of claim 1 wherein said portions are amorphous silicon nitride or amorphous silicon carbide.
Claim 4
Dependent Claim
39 words
The sensor of claim 1 wherein said photosensitive semiconductor layer comprises an n-type layer, a p-type layer and i-type layer disposed between said n-type and p-type layers, said n-type and p-type layers comprising said silicon carbide or silicon nitride.
Claim 5
Dependent Claim
23 words
The sensor of claim 3 wherein said n-type, i-type and p-type layers are made from at least one kind of amorphous semiconductor material.
Claim 6
Dependent Claim
20 words
The sensor of claim 3 wherein said n-type and/or p-type layers are formed continuously extending over a plurality of pixels.
Claim 7
Dependent Claim
19 words
The sensor of claim 1 wherein said photosensitive semiconductor layer is formed continuously extending over a plurality of pixels.
References Cited (Backward Citations)
US4868623A
Cited
US4754152A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |