Patent US1660984A successfully refreshed from Google Patents.
US4868623A
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Image sensing device
Assignee: Fuji Electric Co Ltd
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Filing: 1988-02-17
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Granted: 1989-09-19
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Expires: 2008-02-17
Abstract
Abstract An amorphous silicon thin-film p-i-n photodiode array image sensor structure is provided which avoids excessive leakage currents caused by contamination of the side-walls of anisotropically etched amorphous silicon film with conducting materials, such as metal or metal silicide, during fabrication. The present image sensor structure includes a deposited SiO 2 layer that separates all exposed silicon side-walls from directly underlying conductors.
Inventors
- 👤 Masaharu Nishiura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:22
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; Y; Y10; Y10S; Y10S257/00; Y10S257/91; Y10S257/926
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
148 words
A thin film photodiode array comprising a transparent insulating substrate; an plurality of transparent conducting elements disposed on a first surface of the substrate such that a portion of the substrate remains exposed surrounding each conducting element, each transparent conducting element including an electrode region and a connector region extending from one edge of the electrode region; an insulating layer of sufficient thickness for electrical isolation overlying the exposed portion of the first surface of the substrate and a peripheral portion of each conducting element and having a plurality of apertures defining an exposed portion of each electrode region; a plurality of photosensitive semiconductor elements, each semiconductor element overlying the exposed portion of a respective electrode region and overlapping the edges of a respective aperture in the overlying insulating layer; and a conductive layer overlying the semiconductor elements and extending to the edges of the transparent conducting elements.
Claim 2
Dependent Claim
148 words
A thin film photodiode array comprising a transparent insulating substrate; an plurality of transparent conducting elements disposed on a first surface of the substrate such that a portion of the substrate remains exposed surrounding each conducting element, each transparent conducting element including an electrode region and a connector region extending from one edge of the electrode region; an insulating layer of sufficient thickness for electrical isolation overlying the exposed portion of the first surface of the substrate and a peripheral portion of each conducting element and having a plurality of apertures defining an exposed portion of each electrode region; a plurality of photosensitive semiconductor elements, each semiconductor element overlying the exposed portion of a respective electrode region and overlapping the edges of a respective aperture in the overlying insulating layer; and a conductive layer overlying the semiconductor elements and extending to the edges of the transparent conducting elements.
Claim 3
Dependent Claim
17 words
An array in accordance with claim 1, in which the photosensitive semiconductor elements have a p-i-n structure.
Claim 4
Dependent Claim
17 words
An array in accordance with claim 2 in which the photosensitive semiconductor elements are of amorphous silicon.
Claim 5
Dependent Claim
32 words
An array in accordance with claim 3 in which said transparent conducting elements are of indium-doped tin oxide, said conductive layer is of aluminum, and said insulating layer is a silicon compound.
Claim 6
Dependent Claim
20 words
An array in accordance with claim 1 in which the electrode regions are aligned to form a spaced linear array.
Claim 7
Dependent Claim
24 words
An array in accordance with claim 5 in which each electrode region is substantially squareshaped and the connector regions form a spaced linear array.
Claim 8
Dependent Claim
127 words
A thin film photodiode array comprising a transparent insulating substrate; a plurality of transparent conducting elements disposed on a first surface of the substrate such that a portion of the substrate remains exposed surrounding each conducting element, each transparent conducting element including an electrode region and a connector region extending from one edge of the electrode region; an insulating layer of sufficient thickness for electrical isolation overlying at least the one edge of each electrode region from which the connector region extends; a plurality of photosensitive semiconductor elements, each semiconductor element overlying a respective electrode region, overlapping the insulating layer on at least one edge, and overlapping the edges of the electrode region not overlapped by the insulating layer; and a conductive layer overlying the semiconductor elements.
Claim 9
Dependent Claim
127 words
A thin film photodiode array comprising a transparent insulating substrate; a plurality of transparent conducting elements disposed on a first surface of the substrate such that a portion of the substrate remains exposed surrounding each conducting element, each transparent conducting element including an electrode region and a connector region extending from one edge of the electrode region; an insulating layer of sufficient thickness for electrical isolation overlying at least the one edge of each electrode region from which the connector region extends; a plurality of photosensitive semiconductor elements, each semiconductor element overlying a respective electrode region, overlapping the insulating layer on at least one edge, and overlapping the edges of the electrode region not overlapped by the insulating layer; and a conductive layer overlying the semiconductor elements.
Claim 10
Dependent Claim
14 words
The array of claim 7 in which the semiconductor elements have a p-i-n structure.
Claim 11
Dependent Claim
30 words
The array of claim 8 in which the semiconductor elements are amorphous silicon, the transparent conducting elements are of indium-doped tin oxide, and the insulating layer is a silicon compound.
References Cited (Backward Citations)
US4581620A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-18 | 1993-03-20 | 1993-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-18 | 1997-03-20 | 1997-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-18 | 2001-03-20 | 2001-09-19 | $7700.00 | Window Closed / Lapsed |