US5017816A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Adaptive gate discharge circuit for power FETS
Assignee: National Semiconductor Corp
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Filing: 1989-11-08
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Granted: 1991-05-21
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Expires: 2009-11-08
Abstract
Abstract An adaptive gate discharge circuit for discharging the gate of a power FET transistor. The adaptive gate discharge circuit includes discharge driver circuitry which responds to the control signal by discharging the power FET gate from the initial "on" potential of the power FET to below a selected potential at which the power FET is turned off. During gate discharge, but prior to the potential of the power FET gate dropping below the selected potential, adaptive bias circuitry continues to operate to provide biasing current both to the discharge driver circuitry as well as to any other circuitry it may be biasing. However, when the potential of the power FET gate drops below the selected potential, low current biasing circuitry reduces the operating voltage of the adaptive biasing circuitry thereby turning off the adaptive biasing circuitry and any other circuitry it may be biasing.
Inventors
- 👤 Milton E. Wilcox
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:55
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/687; H03K17/6877; H03K17/06; H03K17/063
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
125 words
An adaptive gate discharge circuit for discharging the gate of a power FET transistor from its conduction potential, the adaptive gate discharge circuit comprising: (a) discharge driver circuitry responsive to a control signal for discharging the power FET gate from the conduction potential to below a selected potential; (b) adaptive bias circuitry for providing an operating signal to the discharge driver circuitry during discharge of the power FET gate, the operating signal being sufficient for operation of the discharge driver circuitry; and (c) low current biasing circuitry connected to the adaptive biasing circuitry and responsive to the discharge of the power FET gate to below the selected potential to reduce the operating voltage of the adaptive biasing circuitry thereby turning off the adaptive biasing circuitry.
Claim 2
Dependent Claim
125 words
An adaptive gate discharge circuit for discharging the gate of a power FET transistor from its conduction potential, the adaptive gate discharge circuit comprising: (a) discharge driver circuitry responsive to a control signal for discharging the power FET gate from the conduction potential to below a selected potential; (b) adaptive bias circuitry for providing an operating signal to the discharge driver circuitry during discharge of the power FET gate, the operating signal being sufficient for operation of the discharge driver circuitry; and (c) low current biasing circuitry connected to the adaptive biasing circuitry and responsive to the discharge of the power FET gate to below the selected potential to reduce the operating voltage of the adaptive biasing circuitry thereby turning off the adaptive biasing circuitry.
Claim 3
Dependent Claim
269 words
An adaptive gate discharge circuit connected to the gate of a power FET for discharging the power FET gate from a conduction voltage to a discharge voltage, the adaptive gate discharge circuitry comprising: (a) discharge driver circuitry responsive to a control signal for discharging the power FET gate from the conduction voltage, the discharge driver circuitry comprising a discharge driver transistor having its emitter connected to ground via a first resistive element, its collector connected to the power FET gate via a collector current multiplier, and its base connected to receive an operating signal; (b) adaptive bias circuitry for providing the operating signal to the discharge driver circuitry during discharge of the power FET gate, the adaptive bias circuitry comprising a first NPN transistor having its collector connected to a charge supply, its base connected to the charge supply via a second resistive element and to the base of the discharge drive transistor, the emitter of the first NPN transistor connected to the base-collector junction of a second NPN transistor via a third resistive element, the emitter of the second NPN transistor connected to ground, and a third NPN transistor having its collector connected to the emitter of the discharge drive transistor, its base connected to the base of the second NPN transistor and its emitter connected to ground via a fourth resistive element; and (c) low current biasing circuitry responsive to discharge of the power FET gate to below the discharge voltage for turning off the adaptive bias circuitry, the low current biasing circuitry comprising diode means connected between the base of the discharge drive transistor and ground.
Claim 4
Dependent Claim
269 words
An adaptive gate discharge circuit connected to the gate of a power FET for discharging the power FET gate from a conduction voltage to a discharge voltage, the adaptive gate discharge circuitry comprising: (a) discharge driver circuitry responsive to a control signal for discharging the power FET gate from the conduction voltage, the discharge driver circuitry comprising a discharge driver transistor having its emitter connected to ground via a first resistive element, its collector connected to the power FET gate via a collector current multiplier, and its base connected to receive an operating signal; (b) adaptive bias circuitry for providing the operating signal to the discharge driver circuitry during discharge of the power FET gate, the adaptive bias circuitry comprising a first NPN transistor having its collector connected to a charge supply, its base connected to the charge supply via a second resistive element and to the base of the discharge drive transistor, the emitter of the first NPN transistor connected to the base-collector junction of a second NPN transistor via a third resistive element, the emitter of the second NPN transistor connected to ground, and a third NPN transistor having its collector connected to the emitter of the discharge drive transistor, its base connected to the base of the second NPN transistor and its emitter connected to ground via a fourth resistive element; and (c) low current biasing circuitry responsive to discharge of the power FET gate to below the discharge voltage for turning off the adaptive bias circuitry, the low current biasing circuitry comprising diode means connected between the base of the discharge drive transistor and ground.
Claim 5
Dependent Claim
114 words
An adaptive gate discharge circuit as in claim 2 wherein the collector current multiplier comprises: (a) a first multiple collector PNP transistor having its emitter connected to the power FET gate and to its base via a fifth resistive element, its primary collector connected to the source of the power FET, and a secondary collector connected to its base; and (b) a second multiple collector PNP transistor having its emitter connected to the base-secondary collector junction of the first multiple collector PNP transistor and to its own base via a sixth resistive element, a secondary collector connected to its base, and its base-secondary collector junction connected to the collector of the discharge drive transistor.
Claim 6
Dependent Claim
20 words
An adaptive gate discharge circuit as in claim 2 wherein the diode means comprises a plurality of diode-connected NPN transistors.
References Cited (Backward Citations)
US4430586A
Cited
US4481434A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-20 | 1994-11-19 | 1995-05-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-20 | 1998-11-19 | 1999-05-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-20 | 2002-11-19 | 2003-05-21 | $7700.00 | Window Closed / Lapsed |