Patent US5016990A successfully refreshed from Google Patents.
US5016990A
Expired / Lapsed
US
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Method of modulating an optical beam
Assignee: US Philips Corp
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Filing: 1989-01-26
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Granted: 1991-05-21
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Expires: 2009-01-26
Abstract
Abstract A method of modulating an optical beam (1) and apparatus for use in such a method are described. An etalon structure (2) is provided which has an absorption edge in the vicinity of the wavelength of the optical beam (1) and which comprises material of a smaller band gap, for example gallium arsenide, sandwiched between layers of material of a larger band gap, for example aluminium gallium arsenide, so that the smaller band gap material forms a quantum size effect confinement region for electrons and holes. The smaller band gap material may consist of layers (4) separated by barrier layers (3) of the larger band gap material so that the layers (4) form quantum wells. The optical beam (1) is directed through quantum size effect confinement region of the etalon structure (2) and a polarized control optical beam (5) is directed at the etalon structure (2) perpendicular to a direction of quantum size effect confinement of the etalon structure (2), thereby causing the optical beam (1) to be modulated by the control optical beam ( 5).
Inventors
- 👤 Peter J. Dobson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:35
CPC Classifications
B; B82; B82Y; B82Y20/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/21; G02F1/218; G02F1/015; G02F1/017; G02F1/01716; G02F1/01708
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
151 words
A method of modulating an optical beam, which method comprises providing an etalon structure having an absorption edge in the vicinity of the wavelength of the optical beam and comprising material of a smaller band gap sandwiched between layers of material of a larger band gap so that the smaller band gap material forms a quantum size effect confinement region for electrons and holes, directing the optical beam through the quantum size effect confinement region of the etalon structure and directing a polarised control optical beam at the etalon structure with the electric field of the polarised control optical beam perpendicular to a direction of quantum size effect confinement of the etalon structure for causing the absorption edge of the etalon structure and the amplitude of the optical beam to be modulated by the control optical beam at a frequency which is twice the frequency of the polarised control optical beam.
Claim 2
Independent Claim
151 words
A method of modulating an optical beam, which method comprises providing an etalon structure having an absorption edge in the vicinity of the wavelength of the optical beam and comprising material of a smaller band gap sandwiched between layers of material of a larger band gap so that the smaller band gap material forms a quantum size effect confinement region for electrons and holes, directing the optical beam through the quantum size effect confinement region of the etalon structure and directing a polarised control optical beam at the etalon structure with the electric field of the polarised control optical beam perpendicular to a direction of quantum size effect confinement of the etalon structure for causing the absorption edge of the etalon structure and the amplitude of the optical beam to be modulated by the control optical beam at a frequency which is twice the frequency of the polarised control optical beam.
Claim 3
Dependent Claim
25 words
A method according to claim 1, which comprises providing the quantum size effect confinement region of the etalon structure as at least one quantum well.
Claim 4
Dependent Claim
25 words
A method according to claim 2, which comprises providing the quantum size effect confinement region of the etalon structure as a multiple quantum well structure.
Claim 5
Dependent Claim
27 words
A method according to claim 1, which comprises directing the optical beam through the quantum size effect confinement region perpendicularly of the layers of the etalon structure.
Claim 6
Dependent Claim
27 words
A method according to claim 1, which comprises directing the optical beam through the quantum size effect confinement region parallel to the layers of the etalon structure.
Claim 7
Dependent Claim
18 words
A method according to claim 1 which comprises applying a direct current bias potential across the etalon structure.
Claim 8
Dependent Claim
20 words
A method according to claim 6, which comprises applying the bias potential perpendicularly of the layers of the etalon structure.
Claim 9
Dependent Claim
149 words
Apparatus for modulating an optical beam, which apparatus comprises an etalon structure having an absorption edge in the vicinity of the wavelength of the optical beam to be modulated and comprising material of a smaller band gap sandwiched between layers of material of a larger band gap so that the smaller band gap material forms a quantum size effect confinement region for electrons and holes, and means for directing a polarised control optical beam at the etalon structure with the electric field of the polarised control optical beam perpendicular to a direction of quantum size effect confinement of the etalon structure for causing the absorption edge of the etalon structure and the amplitude of an optical beam passing through the quantum size effect confinement region to be modulated by the control optical beam at a frequency which is twice that of the frequency of the polarised control optical beam.
Claim 10
Dependent Claim
149 words
Apparatus for modulating an optical beam, which apparatus comprises an etalon structure having an absorption edge in the vicinity of the wavelength of the optical beam to be modulated and comprising material of a smaller band gap sandwiched between layers of material of a larger band gap so that the smaller band gap material forms a quantum size effect confinement region for electrons and holes, and means for directing a polarised control optical beam at the etalon structure with the electric field of the polarised control optical beam perpendicular to a direction of quantum size effect confinement of the etalon structure for causing the absorption edge of the etalon structure and the amplitude of an optical beam passing through the quantum size effect confinement region to be modulated by the control optical beam at a frequency which is twice that of the frequency of the polarised control optical beam.
Claim 11
Dependent Claim
22 words
Apparatus according to claim 8, wherein the quantum size effect confinement region of the etalon structure comprises at least one quantum well.
Claim 12
Dependent Claim
22 words
Apparatus according to claim 9, wherein the quantum size effect confinement region of the etalon structure comprises a multiple quantum well structure.
Claim 13
Dependent Claim
19 words
Apparatus according to claim 8 which comprises means for applying a direct current bias potential across the etalon structure.
Claim 14
Dependent Claim
24 words
Apparatus according to claim 11, wherein the means for applying the bias potential comprises electrical contacts provided on opposed surfaces of the etalon structure.
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