US5016253A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Mitsubishi Electric Corp
•
Filing: 1990-04-03
•
Granted: 1991-05-14
•
Expires: 2010-04-03
Abstract
Abstract A semiconductor laser device includes at least two semiconductor laser elements emitting a plurality of laser beams from the front and rear facets, a light guide layer which guides the respective laser beams emitted from the rear facets and converts the wave fronts of the beams while guiding them to form separated beams, and a plurality of photodetectors which detect the converted wave fronts converted to monitor the intensities of laser beams emitted from the front facets.
Inventors
- 👤 Masayuki Kubota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 06:36
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/124; G02B6/13; G02B6/134; G02B6/1345; G02B6/24; G02B6/42; G02B6/4201; G02B6/4246; H01S5/02; H01S5/022; H01S5/023; H01S5/02325; H01S5/02326; H01S5/005; H01S5/06; H01S5/068; H01S5/0683
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
88 words
A semiconductor laser device comprising: a semiconductor laser element including opposed front and rear facets for emitting a plurality of laser beams from each of said front and rear facets; a light guide layer for guiding the plurality of laser beams emitted from said rear facet and for converging the laser beams by wave front conversion during guiding; and a plurality of photodetectors which each detect a respective wave front converged laser beam from said light guide layer for monitoring the laser beams emitted from said front facet.
Claim 2
Dependent Claim
88 words
A semiconductor laser device comprising: a semiconductor laser element including opposed front and rear facets for emitting a plurality of laser beams from each of said front and rear facets; a light guide layer for guiding the plurality of laser beams emitted from said rear facet and for converging the laser beams by wave front conversion during guiding; and a plurality of photodetectors which each detect a respective wave front converged laser beam from said light guide layer for monitoring the laser beams emitted from said front facet.
Claim 3
Dependent Claim
66 words
A semiconductor laser device as claimed in claim 1 comprising: an insulating substrate on which said semiconductor laser element, said plurality of photodetectors, and said light guide layer are disposed, said light guide layer being disposed adjacent said rear facet of said semiconductor laser element and said plurality of photodetectors being disposed on the opposite side of said light guide layer from said semiconductor laser element.
Claim 4
Dependent Claim
22 words
A semiconductor laser device as defined in claim 2 wherein said lightguide layer comprises LiNbO 3 into which Ti has been diffused.
Claim 5
Dependent Claim
23 words
A semiconductor laser device as defined in claim 2 wherein said substrate is Si and said photodetectors are integral with said Si substrate.
Claim 6
Dependent Claim
18 words
A semiconductor laser device as defined in claim 4 wherein said photodetectors diffusion regions in said Si substrate.
Claim 7
Dependent Claim
33 words
A semiconductor laser device as claimed in claim 5 wherein said Si substrate is n type and said diffused regions contain at least one of B, Zn, and Ga as a dopant impurity.
Claim 8
Dependent Claim
17 words
A semiconductor laser device as defined in claim 5 wherein said light guide layer covers said photodetectors.
Claim 9
Dependent Claim
36 words
A semiconductor laser device as claimed in claim 7 wherein said light guide layer includes a diffraction grating to increase the photocoupling efficiency between the laser beams guided by said light guide layer and said photodetectors.
Claim 10
Dependent Claim
20 words
A semiconductor laser device as claimed in claim 1 wherein said laser element includes a plurality of discrete semiconductor lasers.
Claim 11
Dependent Claim
28 words
A semiconductor laser device as claimed in claim 1 wherein said laser element includes an integrated semiconductor laser including multiple resonators for producing the plurality of laser beams.
References Cited (Backward Citations)
JPS5975656A
Cited
JPS61152088A
Cited
JPS61161785A
Cited
US4764931A
Cited
JPS624385A
Cited
US4692207A
Cited
JPS63158887A
Cited
JPS63164034A
Cited
JPS63228792A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-13 | 1994-11-12 | 1995-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-13 | 1998-11-12 | 1999-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-13 | 2002-11-12 | 2003-05-14 | $7700.00 | Window Closed / Lapsed |