US4764931A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Sony Corp
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Filing: 1986-03-20
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Granted: 1988-08-16
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Expires: 2006-03-20
Abstract
Abstract A semiconductor laser device having a first photodetector constructed on one major surface of a semiconductor substrate, a semiconductor laser chip mounted on the major surface adjacent to the first photodetector, and a second photodetector constructed on the major surface adjacent to the first photodetector at the side thereof opposite to the semiconductor laser chip, said second photodetector being positioned during manufacture to detect emissions from the laser chip of an adjacent fixedly positioned laser device.
Inventors
- 👤 Osamu Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:31
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/023; H01S5/02325; H10; H10W; H10W72/00; H10W72/01; H10W72/0198; H01S5/0201; H01S5/0202; H01S5/06; H01S5/068; H01S5/0683; H10W72/50; H10W72/531; H10W72/536; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
72 words
A semiconductor device comprising: (a) a first photodetector constructed on one major surface of a semiconductor substrate; (b) a semiconductor laser chip mounted on said major surface at a position proximate to and on one side of said first photodetector; and (c) a second photodetector constructed on said major surface at a position proximate to said first photodetector, said second photodetector being constructed of said first photodetector opposite said semiconductor laser chip.
Claim 2
Dependent Claim
72 words
A semiconductor device comprising: (a) a first photodetector constructed on one major surface of a semiconductor substrate; (b) a semiconductor laser chip mounted on said major surface at a position proximate to and on one side of said first photodetector; and (c) a second photodetector constructed on said major surface at a position proximate to said first photodetector, said second photodetector being constructed of said first photodetector opposite said semiconductor laser chip.
Claim 3
Dependent Claim
28 words
A semiconductor device according to claim 1, in which said second photodetector has an effective laser receiving region which extends onto the end face of said semiconductor substrate.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 2, in which said second photodetector consists of a plurality of photodetectors positioned along said end face.
Claim 5
Dependent Claim
43 words
A semiconductor device according to claim 1, in which said first photodetector detects a part of laser emission from said semiconductor laser chip and operates to control the applied power to said semiconductor laser chip to regulate laser emission from said laser chip.
Claim 6
Dependent Claim
132 words
A semiconductor apparatus comprising: at least two semiconductor devices arranged on a layer of a semiconductor substrate, each of said at least two semiconductor devices having a first photodetector constructed on its top major surface, a semiconductor laser chip mounted on said top major surface at a position proximate to and on one side of said first photodetector, and a second photodetector constructed on said top major surface at a position proximate to said first photodetector, said second photodetector being constructed on the side of first photodetector opposite said semiconductor laser chip whereby said second photodetector of one device is used for testing a laser emission from a semiconductor laser chip of the other device, both of said devices being mounted on said semiconductor substrate proximate to but separate from each other.
Claim 7
Dependent Claim
132 words
A semiconductor apparatus comprising: at least two semiconductor devices arranged on a layer of a semiconductor substrate, each of said at least two semiconductor devices having a first photodetector constructed on its top major surface, a semiconductor laser chip mounted on said top major surface at a position proximate to and on one side of said first photodetector, and a second photodetector constructed on said top major surface at a position proximate to said first photodetector, said second photodetector being constructed on the side of first photodetector opposite said semiconductor laser chip whereby said second photodetector of one device is used for testing a laser emission from a semiconductor laser chip of the other device, both of said devices being mounted on said semiconductor substrate proximate to but separate from each other.
Claim 8
Dependent Claim
40 words
A semiconductor device according to claim 3, in which said second photodetector is positioned to test a far field pattern of a laser emission from a semiconductor laser chip facing towards said second photodetector sidewards from an adjacent separate substrate.
Claim 9
Independent Claim
272 words
A method of manufacturing and testing semiconductor devices comprising the steps of: providing a semiconductor substrate; forming a first photodetector at a plurality of predetermined locations on the surface of said semiconductor substrate; forming a second photodetector at a plurality of predetermined locations on the surface of said semiconductor substrate, each of said second photodetectors being formed at a position proximate to each of said first photodetectors; depositing a solder layer at a plurality of predetermined locations on the surface of said semiconductor substrate, each of said solder layers being positioned proximate to each of said first photodetectors on the side of each of said first photodetectors opposite each of said second photodetectors; etching a groove around each group of said first and second photodetectors and said solder layer to form groups of first and second photodetectors and said solder layer, said groove having side walls which are nonperpendicular to the major surface of said substrate; providing a semiconductor laser chip for each of said solder layers; using a probe in conjunction with said second photodetector of a first group of first and second photodetectors and said semiconductor laser chip, said second photodetector of said first group receiving the output of a laser chip from a second group of first and second photodetectors and semiconductor laser chip which is positioned proximate to said first group and is separated from said first group by said groove in order to test the laser emission output of each of said semiconductor laser chips; sawing through said semiconductor substrate along said grooves to separate the individual groups of first and second photodetectors and semiconductor laser chips.
Claim 10
Independent Claim
272 words
A method of manufacturing and testing semiconductor devices comprising the steps of: providing a semiconductor substrate; forming a first photodetector at a plurality of predetermined locations on the surface of said semiconductor substrate; forming a second photodetector at a plurality of predetermined locations on the surface of said semiconductor substrate, each of said second photodetectors being formed at a position proximate to each of said first photodetectors; depositing a solder layer at a plurality of predetermined locations on the surface of said semiconductor substrate, each of said solder layers being positioned proximate to each of said first photodetectors on the side of each of said first photodetectors opposite each of said second photodetectors; etching a groove around each group of said first and second photodetectors and said solder layer to form groups of first and second photodetectors and said solder layer, said groove having side walls which are nonperpendicular to the major surface of said substrate; providing a semiconductor laser chip for each of said solder layers; using a probe in conjunction with said second photodetector of a first group of first and second photodetectors and said semiconductor laser chip, said second photodetector of said first group receiving the output of a laser chip from a second group of first and second photodetectors and semiconductor laser chip which is positioned proximate to said first group and is separated from said first group by said groove in order to test the laser emission output of each of said semiconductor laser chips; sawing through said semiconductor substrate along said grooves to separate the individual groups of first and second photodetectors and semiconductor laser chips.
References Cited (Backward Citations)
GB1483849A
Cited
US4338577A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-16 | 1992-02-15 | 1992-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-16 | 1996-02-15 | 1996-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-16 | 2000-02-15 | 2000-08-16 | $7700.00 | Window Closed / Lapsed |