Patent US961830A successfully refreshed from Google Patents.
Patent US5016252A successfully refreshed from Google Patents.
US5016252A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Sanyo Electric Co Ltd
•
Filing: 1989-09-26
•
Granted: 1991-05-14
•
Expires: 2009-09-26
Abstract
Abstract A semiconductor laser device of an AlGaInP system includes a GaAs substrate and a surface of the substrate is inclined by 5° or more from a {100} plane in a <011> direction.
Inventors
- 👤 Hiroki Hamada
- 👤 Shoji Honda
- 👤 Masayuki Shono
- 👤 Takao Yamaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 03:07
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; B; B82; B82Y; B82Y20/00; H01S2304/00; H01S2304/04; H01S5/20; H01S5/22; H01S5/3202; H01S5/34; H01S5/343; H01S5/34326
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
109 words
In a semiconductor laser device comprising: a GaAs substrate of a first conductivity type, a buffer layer of the first conductivity type containing Ga, In and P, formed on one main surface of said GaAs substrate inclined by 5° or more from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P. formed on said buffer layer, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer.
Claim 2
Dependent Claim
109 words
In a semiconductor laser device comprising: a GaAs substrate of a first conductivity type, a buffer layer of the first conductivity type containing Ga, In and P, formed on one main surface of said GaAs substrate inclined by 5° or more from a {100} plane of said substrate in a <011> direction, a clad layer of the first conductivity type containing Al, Ga, In and P. formed on said buffer layer, an active layer containing Ga, In and P, formed on said clad layer of the first conductivity type, and a clad layer of a second conductivity type containing Al, Ga, In and P, formed on said active layer.
Claim 3
Dependent Claim
29 words
The device of claim 1, wherein said main surface is inclined in the range of from about 5° to about 7° from the {100} plane in the <011> direction.
Claim 4
Dependent Claim
44 words
The device of claim 1, wherein compositions of said buffer layer, said clad layers and said active layer are Ga 0 .5 P, (Al 0 .5 Ga 0 .5) 0 .5 In 0 .5 P, and Ga 0 .5 In 0 .5 P, respectively.
Claim 5
Dependent Claim
12 words
The device of claim 1, wherein said active layer further contains Al.
Claim 6
Dependent Claim
44 words
The device of claim 4, wherein said clad layers and said active layer have a composition of (Al x Ga l-x ) 0 .5 In 0 .5 P and the values of x in said clad layer being greater than in said active layer.
Claim 7
Dependent Claim
22 words
The device of claim 5, wherein the value of x in said active layer is in the range of 0.1 to 0.15.
Claim 8
Dependent Claim
50 words
The device of claim 1, wherein said buffer layer of the first conductivity type and said clad layer of the first conductivity type are doped with Se as an n type impurity, and said clad layer of the second conductivity type is doped with Mg as a p type impurity.
Claim 9
Dependent Claim
48 words
The device of claim 1, wherein said buffer layer of the first conductivity type, said clad layer of the first conductivity type, said active layer and said clad layer of the second conductivity type have thicknesses of about 0.5 μm, 1.0 μm, 0.08 μm and 0.8 μm, respectively.
Claim 10
Dependent Claim
26 words
The device of claim 1, further comprising a GaAs cap layer of the second conductivity type formed on said clad layer of the second conductivity type.
Claim 11
Dependent Claim
36 words
The device of claim 9, further comprising a current blocking layer of SiO 2 formed on said cap layer of the second conductivity type, said blocking layer having a stripe-shaped opening for enabling passage of current.
References Cited (Backward Citations)
US4581742A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-13 | 1994-11-12 | 1995-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-13 | 1998-11-12 | 1999-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-13 | 2002-11-12 | 2003-05-14 | $7700.00 | Window Closed / Lapsed |