US5016084A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
•
Filing: 1990-04-02
•
Granted: 1991-05-14
•
Expires: 2010-04-02
Abstract
Abstract A semiconductor device is provided with an electrically conductive cap having a sufficiently thick edge portion for preventing warpage due to the hardening of an encapsulating resin. Since the edge portion of the conductive cap is formed into the shape of a frame, and its thickness is made large, the mechanical strength of the conductive cap is improved, so that even when stress is applied to the conductive cap owing to the hardening of the encapsulating resin, the conductive cap is unlikely to undergo deformation, thereby preventing the warping of the semiconductor device.
Inventors
- 👤 Shin Nakao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:57
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/701; H05; H05K; H05K5/00; H05K5/0091; H05K5/0095; H10W74/00; H10W74/10; H10W74/111; H10W74/114
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
144 words
A semiconductor device comprising: an electrically conductive cap including a bottom wall and a contiguous edge portion transverse to said bottom wall, said bottom wall and edge portion defining a recess bounded by said edge portion and said bottom wall; a semiconductor element disposed in the recess; an insulating film disposed on said edge portion adjacent the recess and generally parallel to said bottom wall; a lead disposed on said insulating film and connected to said semiconductor element; and an encapsulating resin disposed in said recess encapsulating said semiconductor element, said insulating film, and said lead, wherein said edge portion and bottom wall have thicknesses generally parallel to and transverse to said bottom wall, respectively, and said edge portion has a thickness greater than the thickness of said bottom wall whereby warpage of said bottom wall when said encapsulating resin is cured is prevented.
Claim 2
Dependent Claim
144 words
A semiconductor device comprising: an electrically conductive cap including a bottom wall and a contiguous edge portion transverse to said bottom wall, said bottom wall and edge portion defining a recess bounded by said edge portion and said bottom wall; a semiconductor element disposed in the recess; an insulating film disposed on said edge portion adjacent the recess and generally parallel to said bottom wall; a lead disposed on said insulating film and connected to said semiconductor element; and an encapsulating resin disposed in said recess encapsulating said semiconductor element, said insulating film, and said lead, wherein said edge portion and bottom wall have thicknesses generally parallel to and transverse to said bottom wall, respectively, and said edge portion has a thickness greater than the thickness of said bottom wall whereby warpage of said bottom wall when said encapsulating resin is cured is prevented.
Claim 3
Dependent Claim
42 words
A semiconductor device according to claim 1 wherein said semiconductor element has a thickness transverse to said bottom wall and the height of said edge portion transverse to said bottom wall is at least equal to the thickness of said semiconductor element.
Claim 4
Dependent Claim
29 words
A semiconductor device according to claim 1 wherein said conductive cap is formed of one of an alloy of nickel and iron and an alloy of copper and tungsten.
Claim 5
Dependent Claim
25 words
A semiconductor device according to claim 1 wherein said conductive cap is formed of a cladded material for enhancing the heat conductivity of said cap.
Claim 6
Dependent Claim
30 words
A semiconductor device according to claim 1, including a conductive sheet disposed on said insulating film opposite said lead wherein said conductive sheet and said edge portion are adhered together.
Claim 7
Dependent Claim
31 words
A semiconductor device according to claim 5 wherein said insulating film contains a through hole and wherein said lead passes through the through hole to electrically connect to said conductive sheet.
Claim 8
Dependent Claim
14 words
A semiconductor device according to claim 4 wherein said cladded material includes cobalt-molybdenum cladding.
Claim 9
Dependent Claim
151 words
A semiconductor device comprising: an electrically conductive metallic cap having a metallic cladding layer and including a bottom wall and a contiguous edge portion transverse to said bottom wall, said bottom wall and edge portion defining a recess bounded by said edge portion and said bottom wall; a semiconductor element disposed in the recess; an insulating film disposed on said edge portion adjacent the recess and generally parallel to said bottom wall; a lead disposed on said insulating film and connected to said semiconductor element; and an encapsulating resin disposed in said recess encapsulating said semiconductor element, said insulating film, and said lead, wherein said edge portion and bottom wall have thicknesses generally parallel to and transverse to said bottom wall, respectively, and said edge portion has a thickness greater than the thickness of said bottom wall whereby warpage of said bottom wall when said encapsulating resin is cured is prevented.
Claim 10
Dependent Claim
151 words
A semiconductor device comprising: an electrically conductive metallic cap having a metallic cladding layer and including a bottom wall and a contiguous edge portion transverse to said bottom wall, said bottom wall and edge portion defining a recess bounded by said edge portion and said bottom wall; a semiconductor element disposed in the recess; an insulating film disposed on said edge portion adjacent the recess and generally parallel to said bottom wall; a lead disposed on said insulating film and connected to said semiconductor element; and an encapsulating resin disposed in said recess encapsulating said semiconductor element, said insulating film, and said lead, wherein said edge portion and bottom wall have thicknesses generally parallel to and transverse to said bottom wall, respectively, and said edge portion has a thickness greater than the thickness of said bottom wall whereby warpage of said bottom wall when said encapsulating resin is cured is prevented.
Claim 11
Dependent Claim
17 words
A semiconductor device according to claim 8 wherein the metallic cladding layer is a cobalt-molybdenum cladding layer.
Claim 12
Dependent Claim
17 words
A semiconductor device according to claim 8 wherein said edge portion and said bottom wall are unitary.
Claim 13
Dependent Claim
23 words
A semiconductor device according to claim 8 wherein said edge portion is non-contiguous and adhered to said bottom wall of said conductive cap.
Claim 14
Dependent Claim
42 words
A semiconductor device according to claim 8 wherein said semiconductor element has a thickness transverse to said bottom wall and the height of said edge portion transverse to said bottom wall is at least equal to the thickness of said semiconductor element.
Claim 15
Dependent Claim
29 words
A semiconductor device according to claim 8 wherein said conductive cap is formed of one of an alloy of iron and nickel and an alloy of copper and tungsten.
Claim 16
Dependent Claim
30 words
A semiconductor device according to claim 8 including a conductive sheet disposed on said insulating film opposite said lead wherein said conductive sheet and said edge portion are adhered together.
Claim 17
Dependent Claim
31 words
A semiconductor device according to claim 8 wherein said insulating film contains a through hole and wherein said lead passes through the through hole to electrically connect to said conductive sheet.
References Cited (Backward Citations)
US3942245A
Cited
US3911561A
Cited
JPS54160171A
Cited
JPS5574149A
Cited
JPS55121662A
Cited
US4392151A
Cited
US4330790A
Cited
JPS5885539A
Cited
US4691225A
Cited
US4633573A
Cited
JPS6077446A
Cited
GB2164794A
Cited
US4701999A
Cited
US4829403A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-13 | 1994-11-12 | 1995-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-13 | 1998-11-12 | 1999-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-13 | 2002-11-12 | 2003-05-14 | $7700.00 | Window Closed / Lapsed |